公开(公告)号：JP2004072778A

公开(公告)日：2004-03-04

申请号：JP2003289608

申请日：2003-08-08

Applicant: Intel Corp ,  インテル コーポレイション

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56

CPC classification number: H03H9/564 ,  H03H3/02 ,  Y10T29/42

Abstract: PROBLEM TO BE SOLVED: To provide a better method for forming a thin film bulk acoustic resonator filter. SOLUTION: The film bulk acoustic resonator filter 10 is formed of a plurality of interconnected series and shunt film bulk acoustic resonators 38 formed on the same membrane 35. Each of the film bulk acoustic resonator 38 is formed of one common lower conductive layer which is defined to form a bottom electrode 32 of the film bulk acoustic resonator 38. The one common conductive layer is defined to form a top electrode 36 of each of the film bulk acoustic resonator 38. One common piezoelectric film layer 34 which may or may not be not patterned forms one continuous or discontinuous film. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2010063142A

公开(公告)日：2010-03-18

申请号：JP2009254140

申请日：2009-11-05

Applicant: Intel Corp ,  インテル コーポレイション

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H3/02 ,  H03H9/24 ,  H01L41/09 ,  H01L41/22 ,  H03H9/17 ,  H03H9/54 ,  H03H9/56

CPC classification number: H03H9/564 ,  H03H3/02 ,  Y10T29/42

Abstract: PROBLEM TO BE SOLVED: To provide a better method of forming a thin-film bulk acoustic resonator filter. SOLUTION: In the method of manufacturing a thin-film bulk acoustic resonator filer, a thin-film bulk acoustic resonator filter 10 includes a plurality of thin-film bulk acoustic resonators 38a to 38g series-connected and branched on the same film 35. The thin-film bulk acoustic resonators 38a to 38g are made of a single common lower conductive layer to have respective bottom electrodes of the thin-film bulk acoustic resonators. The single common conductive layer is provided to form respective upper electrodes of the thin-film bulk acoustic resonators 38a to 38g. A common piezoelectric thin-film layer, which may or may not be patterned, is formed as a thin film continuous as a single or not continuous. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种更好的形成薄膜体声波谐振器滤波器的方法。 解决方案：在制造薄膜体声波谐振器滤波器的方法中，薄膜体声波谐振器滤波器10包括在相同的膜上串联和分支的多个薄膜体声波谐振器38a至38g 薄膜体声共振器38a至38g由单个公共下导电层制成，以具有薄膜体声波谐振器的相应底部电极。 提供单个公共导电层以形成薄膜体声波谐振器38a至38g的相应上电极。 可以或可以不被图案化的公共压电薄膜层作为单独的或不连续的连续的薄膜形成。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2004036744A3

公开(公告)日：2004-07-22

申请号：PCT/US0324142

申请日：2003-08-01

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/205

CPC classification number: H03H9/564 ,  H03H3/02 ,  Y10T29/42

Abstract: A film bulk acoustic resonator filter may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators formed on the same membrane. Each of the film bulk acoustic resonators may be formed from a common lower conductive layer which is defined to form the bottom electrode of each film bulk acoustic resonator. A common top conductive layer may be defined to form each top electrode of each film bulk acoustic resonator. A common piezoelectric film layer, that may or may not be patterned, forms a continuous or discontinuous film.

Abstract translation: 薄膜体声波谐振器滤波器可以形成有在相同膜上形成的多个互连的串联和分流膜体声波谐振器。 每个薄膜体声波谐振器可以由共同的下导电层形成，该下导电层被限定为形成每个薄膜体声波谐振器的下电极。 可以限定公共顶部导电层以形成每个薄膜体声波谐振器的每个顶部电极。 常见的压电薄膜层可以或不可以被图案化，形成连续或不连续的薄膜。

公开(公告)号：DE60318283D1

公开(公告)日：2008-02-07

申请号：DE60318283

申请日：2003-07-24

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H3/02 ,  H03H9/24 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：DE60318283T2

公开(公告)日：2008-12-11

申请号：DE60318283

申请日：2003-07-24

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H3/02 ,  H03H9/24 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：AU2003298535A8

公开(公告)日：2004-05-04

申请号：AU2003298535

申请日：2003-08-01

Applicant: INTEL CORP

Inventor： TRAN QUAN ,  GINSBURG EYAL ,  RAO VALLURI ,  WANG LI-PENG ,  TALALYEVSKY ALEXANDER ,  MA QING ,  BAR-SADEH EYAL ,  HECK JOHN

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/205

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：AT382205T

公开(公告)日：2008-01-15

申请号：AT03016929

申请日：2003-07-24

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H3/02 ,  H03H9/24 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：AU2003298535A1

公开(公告)日：2004-05-04

申请号：AU2003298535

申请日：2003-08-01

Applicant: INTEL CORP

Inventor： BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL ,  WANG LI-PENG

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H3/00

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：DE10333782A1

公开(公告)日：2004-03-18

申请号：DE10333782

申请日：2003-07-24

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/15 ,  H03H9/54

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：GB2392329B

公开(公告)日：2005-03-16

申请号：GB0318456

申请日：2003-08-06

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/17 ,  H03H9/58

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.