METHOD AND APPARATUS FOR SLOPE TO THRESHOLD CONVERSION FOR PROCESS STATE MONITORING AND ENDPOINT DETECTION

    公开(公告)号:AU2003303494A1

    公开(公告)日:2004-07-29

    申请号:AU2003303494

    申请日:2003-12-11

    Applicant: LAM RES CORP

    Abstract: A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated. Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified based on the detection of the deviation value. A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.

    12.
    发明专利
    未知

    公开(公告)号:DE60211915D1

    公开(公告)日:2006-07-06

    申请号:DE60211915

    申请日:2002-03-26

    Abstract: Methods of fabricating semiconductor structures on a substrate, where the substrate has transistors formed thereon, are provided. One method includes forming interconnect metallization structures in a plurality of levels. The forming of the interconnect metallization structures includes depositing a sacrificial layer and performing a process to etch trenches, vias, and stubs into the sacrificial layer. The method further includes filling and planarizing the trenches, vias, and stubs that were etched and then etching away the sacrificial layer throughout the plurality of levels of the interconnect metallization structures. The etching leaving a voided interconnect metallization structure that is structurally supported by stubs that are non-electrically functional.

    EDDY CURRENT BASED MEASUREMENT CAPABILITIES

    公开(公告)号:AU2003267272A1

    公开(公告)日:2004-04-19

    申请号:AU2003267272

    申请日:2003-09-15

    Applicant: LAM RES CORP

    Abstract: A method and an apparatus for enhancement of the for measuring resistance-based features of a substrate is provided. The apparatus includes a sensor configured to detect a signal produced by a eddy current generated electromagnetic field. The magnetic field enhancing source is positioned to the alternative side of the object under measurement relative to the sensor to enable the sensitivity enhancing action. The sensitivity enhancing source increases the intensity of the eddy current generated in the object under measurement, and as a result the sensitivity of the sensor. A system enabled to determine a thickness of a layer and a method for determining a resistance-based feature characteristic are also provided.

    ENHANCEMENT OF EDDY CURRENT BASED MEASUREMENT CAPABILITIES

    公开(公告)号:MY143920A

    公开(公告)日:2011-07-29

    申请号:MYPI20033622

    申请日:2003-09-23

    Applicant: LAM RES CORP

    Abstract: A METHOD AND AN APPARATUS FOR ENHANCEMENT OF THE EDDY CURRENT FOR MEASURING RESISTANCE-BASED FEATURES OF A SUBSTRATE IS PROVIDED. THE APPARATUS INCLUDES A SENSOR (210) CONFIGURED TO DETECT A SIGNAL PRODUCED BY AN EDDY CURRENT GENERATED ELECTROMAGNETIC FIELD. THE MAGNETIC FIELD ENHANCING SOURCE (218) IS POSITIONED TO THE ALTERNATIVE SIDE OF THE OBJECT UNDER MEASUREMENT RELATIVE TO THE SENSOR (210) TO ENABLE THE SENSITIVITY ENHANCING ACTION. THE SENSITIVITY ENHANCING SOURCE INCREASES THE INTENSITY OF THE EDDY CURRENT GENERATED IN THE OBJECT UNDER MEASUREMENT, AND AS A RESULT THE SENSITIVITY OF THE SENSOR (210). A SYSTEM ENABLED TO DETERMINE A THICKNESS OF A LAYER AND A METHOD FOR DETERMINING A RESISTANCE-BASED FEATURE CHARACTERISTIC ARE ALSO PROVIDED.

    SEMICONDUCTOR STRUCTURE IMPLEMENTING SACRIFICIAL MATERIAL

    公开(公告)号:IL157828A

    公开(公告)日:2010-06-16

    申请号:IL15782803

    申请日:2003-09-09

    Abstract: Methods of fabricating semiconductor structures on a substrate, where the substrate has transistors formed thereon, are provided. One method includes forming interconnect metallization structures in a plurality of levels. The forming of the interconnect metallization structures includes depositing a sacrificial layer and performing a process to etch trenches, vias, and stubs into the sacrificial layer. The method further includes filling and planarizing the trenches, vias, and stubs that were etched and then etching away the sacrificial layer throughout the plurality of levels of the interconnect metallization structures. The etching leaving a voided interconnect metallization structure that is structurally supported by stubs that are non-electrically functional.

    METHOD AND APPARATUS FOR METROLOGICAL PROCESS CONTROL IMPLEMENTING COMPLIMENTARY SENSORS

    公开(公告)号:AU2003297336A1

    公开(公告)日:2004-07-22

    申请号:AU2003297336

    申请日:2003-12-17

    Applicant: LAM RES CORP

    Abstract: A method for detecting a thickness of a layer of a wafer to be processed is provided. The method includes defining a plurality of sensors configured to create a set of complementary sensors proximate the wafer. Further included in the method is distributing the plurality of sensors along a particular radius of the wafer such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.

    METHOD AND APPARATUS FOR APPLYING DIFFERENTIAL REMOVAL RATES TO A SURFACE OF A SUBSTRATE

    公开(公告)号:AU2003253679A1

    公开(公告)日:2004-01-19

    申请号:AU2003253679

    申请日:2003-06-23

    Applicant: LAM RES CORP

    Abstract: A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A cluster of sensors external to the CMP tool is included. The cluster of sensors is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The cluster of sensors provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.

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