公开(公告)号：AU2003303494A1

公开(公告)日：2004-07-29

申请号：AU2003303494

申请日：2003-12-11

Applicant: LAM RES CORP

Inventor： GOTKIS YEHIEL ,  KATZ VLADIMIR ,  HEMKER DAVID ,  KISTLER RODNEY ,  BRIGHT NICOLAS J

IPC: G05B23/02 ,  H01L21/66 ,  G06F15/00

Abstract: A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated. Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified based on the detection of the deviation value. A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.

公开(公告)号：DE60211915D1

公开(公告)日：2006-07-06

申请号：DE60211915

申请日：2002-03-26

Applicant: GOTKIS YEHIEL ,  WEI DAVID ,  KISTLER RODNEY ,  LAM RES CORP

Inventor： GOTKIS YEHIEL ,  WEI DAVID ,  KISTLER RODNEY

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Methods of fabricating semiconductor structures on a substrate, where the substrate has transistors formed thereon, are provided. One method includes forming interconnect metallization structures in a plurality of levels. The forming of the interconnect metallization structures includes depositing a sacrificial layer and performing a process to etch trenches, vias, and stubs into the sacrificial layer. The method further includes filling and planarizing the trenches, vias, and stubs that were etched and then etching away the sacrificial layer throughout the plurality of levels of the interconnect metallization structures. The etching leaving a voided interconnect metallization structure that is structurally supported by stubs that are non-electrically functional.

公开(公告)号：AU2003267272A1

公开(公告)日：2004-04-19

申请号：AU2003267272

申请日：2003-09-15

Applicant: LAM RES CORP

Inventor： GOTKIS YEHIEL ,  KISTLER RODNEY ,  OWCZARZ ALEKSANDER ,  HEMKER DAVID ,  BRIGHT NICOLAS J

IPC: G01N27/02 ,  H01L21/302 ,  H01L21/461 ,  G01N27/90

Abstract: A method and an apparatus for enhancement of the for measuring resistance-based features of a substrate is provided. The apparatus includes a sensor configured to detect a signal produced by a eddy current generated electromagnetic field. The magnetic field enhancing source is positioned to the alternative side of the object under measurement relative to the sensor to enable the sensitivity enhancing action. The sensitivity enhancing source increases the intensity of the eddy current generated in the object under measurement, and as a result the sensitivity of the sensor. A system enabled to determine a thickness of a layer and a method for determining a resistance-based feature characteristic are also provided.

公开(公告)号：AU2003270533A8

公开(公告)日：2004-04-08

申请号：AU2003270533

申请日：2003-09-10

Applicant: LAM RES CORP

Inventor： KISTLER RODNEY ,  GOTKIS YEHIEL ,  BRIGHT NICOLAS ,  OWCZARZ ALEKSANDER ,  HEMKER DAVID

IPC: B24B37/04 ,  B24B49/02 ,  B24B49/10 ,  H01L21/321 ,  H01L21/66 ,  G01N27/72

Abstract: A system and method of measuring a metallic layer on a substrate within a multi-step substrate process includes modifying a metallic layer on the substrate such as forming a metallic layer or removing at least a portion of the metallic layer. At least one sensor is positioned a predetermined distance from the surface of the substrate. The surface of the substrate is mapped to determine a uniformity of the metallic layer on the surface of the substrate.

公开(公告)号：MY143920A

公开(公告)日：2011-07-29

申请号：MYPI20033622

申请日：2003-09-23

Applicant: LAM RES CORP

Inventor： GOTKIS YEHIEL ,  KISTLER RODNEY ,  OWCZARZ ALEKSANDER ,  HEMKER DAVID ,  BRIGHT NICOLAS J

IPC: G01B7/06 ,  G01N27/02 ,  H01L21/302 ,  H01L21/461

Abstract: A METHOD AND AN APPARATUS FOR ENHANCEMENT OF THE EDDY CURRENT FOR MEASURING RESISTANCE-BASED FEATURES OF A SUBSTRATE IS PROVIDED. THE APPARATUS INCLUDES A SENSOR (210) CONFIGURED TO DETECT A SIGNAL PRODUCED BY AN EDDY CURRENT GENERATED ELECTROMAGNETIC FIELD. THE MAGNETIC FIELD ENHANCING SOURCE (218) IS POSITIONED TO THE ALTERNATIVE SIDE OF THE OBJECT UNDER MEASUREMENT RELATIVE TO THE SENSOR (210) TO ENABLE THE SENSITIVITY ENHANCING ACTION. THE SENSITIVITY ENHANCING SOURCE INCREASES THE INTENSITY OF THE EDDY CURRENT GENERATED IN THE OBJECT UNDER MEASUREMENT, AND AS A RESULT THE SENSITIVITY OF THE SENSOR (210). A SYSTEM ENABLED TO DETERMINE A THICKNESS OF A LAYER AND A METHOD FOR DETERMINING A RESISTANCE-BASED FEATURE CHARACTERISTIC ARE ALSO PROVIDED.

公开(公告)号：IL157828A

公开(公告)日：2010-06-16

申请号：IL15782803

申请日：2003-09-09

Applicant: LAM RES CORP ,  GOTKIS YEHIEL ,  WEI DAVID ,  KISTLER RODNEY

Inventor： GOTKIS YEHIEL ,  WEI DAVID ,  KISTLER RODNEY

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: Methods of fabricating semiconductor structures on a substrate, where the substrate has transistors formed thereon, are provided. One method includes forming interconnect metallization structures in a plurality of levels. The forming of the interconnect metallization structures includes depositing a sacrificial layer and performing a process to etch trenches, vias, and stubs into the sacrificial layer. The method further includes filling and planarizing the trenches, vias, and stubs that were etched and then etching away the sacrificial layer throughout the plurality of levels of the interconnect metallization structures. The etching leaving a voided interconnect metallization structure that is structurally supported by stubs that are non-electrically functional.

公开(公告)号：AU2003297336A1

公开(公告)日：2004-07-22

申请号：AU2003297336

申请日：2003-12-17

Applicant: LAM RES CORP

Inventor： OWCZARZ ALEKSANDER ,  HEMKER DAVID ,  BRIGHT NICOLAS J ,  GOTKIS YEHIEL ,  KISTLER RODNEY

IPC: H01L21/66 ,  G01B7/06 ,  G01R33/12

Abstract: A method for detecting a thickness of a layer of a wafer to be processed is provided. The method includes defining a plurality of sensors configured to create a set of complementary sensors proximate the wafer. Further included in the method is distributing the plurality of sensors along a particular radius of the wafer such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.

公开(公告)号：AU2003270533A1

公开(公告)日：2004-04-08

申请号：AU2003270533

申请日：2003-09-10

Applicant: LAM RES CORP

Inventor： GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER ,  HEMKER DAVID ,  BRIGHT NICOLAS ,  KISTLER RODNEY

IPC: B24B37/04 ,  B24B49/02 ,  B24B49/10 ,  H01L21/321 ,  H01L21/66 ,  G01N27/72

Abstract: A system and method of measuring a metallic layer on a substrate within a multi-step substrate process includes modifying a metallic layer on the substrate such as forming a metallic layer or removing at least a portion of the metallic layer. At least one sensor is positioned a predetermined distance from the surface of the substrate. The surface of the substrate is mapped to determine a uniformity of the metallic layer on the surface of the substrate.

公开(公告)号：AU2003253679A1

公开(公告)日：2004-01-19

申请号：AU2003253679

申请日：2003-06-23

Applicant: LAM RES CORP

Inventor： BRIGHT NICOLAS J ,  GOTKIS YEHIEL ,  KISTLER RODNEY ,  OWCZARZ ALEKSANDER ,  HEMKER DAVID

IPC: B24B1/00 ,  B24B37/013 ,  B24B57/02 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/66 ,  H01L21/302

Abstract: A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A cluster of sensors external to the CMP tool is included. The cluster of sensors is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The cluster of sensors provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.

公开(公告)号：AU2003220552A1

公开(公告)日：2003-10-13

申请号：AU2003220552

申请日：2003-03-26

Applicant: LAM RES CORP

Inventor： OWCZARZ ALEKSANDER ,  MOREL BRUNO ,  KISTLER RODNEY ,  HEMKER DAVID J ,  GOTKIS YEHIEL

IPC: B24B37/005 ,  B24B49/02 ,  B24B49/10 ,  B24B49/14 ,  H01L21/304 ,  H01L21/66 ,  B24B49/12

Abstract: In chemical mechanical polishing apparatus, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.