公开(公告)号：WO2007021654A3

公开(公告)日：2007-11-08

申请号：PCT/US2006030773

申请日：2006-08-07

Applicant: LAM RES CORP ,  BOYD JOHN M ,  REDEKER FRITZ C ,  HEMKER DAVID J

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  HEMKER DAVID J

IPC: B08B3/00 ,  B08B3/04 ,  H01L21/00

CPC classification number: G03F7/30 ,  B08B3/04 ,  G03F7/3092 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

Abstract: A first proximity head is configured to define a meniscus of a photoresist developer solution on a substrate. The meniscus is to be defined between a bottom of the first proximity head and the substrate. A second proximity head is configured to define a rinsing meniscus on the substrate and remove the rinsing meniscus from the substrate. The second proximity head is positioned to follow the first proximity head relative to a traversal direction of the first and second proximity heads over the substrate. Exposure of the substrate to the meniscus of photoresist developer solution causes previously irradiated photoresist material on the substrate to be developed to render a patterned photoresist layer. The first and second proximity heads enable precise control of a residence time of the photoresist developer solution on the substrate during the development process.

Abstract translation: 第一接近头被配置为在衬底上限定光致抗蚀剂显影剂溶液的弯液面。 弯液面应限定在第一邻近头部的底部和基底之间。 第二邻近头被配置为在衬底上限定冲洗弯液面并从衬底移除冲洗弯月面。 第二接近头被定位成相对于基板上的第一和第二接近头的遍历方向跟随第一邻近头。 将衬底暴露于光致抗蚀剂显影剂溶液的弯液面使得先前照射在衬底上的光致抗蚀剂材料被显影以形成图案化的光致抗蚀剂层。 第一和第二接近头允许在显影过程中精确地控制光致抗蚀剂显影剂溶液在基底上的停留时间。

公开(公告)号：WO2012047531A3

公开(公告)日：2012-06-28

申请号：PCT/US2011052727

申请日：2011-09-22

Applicant: LAM RES CORP ,  HEMKER DAVID J ,  SHEET LUBAB L ,  MARKS JEFFREY

Inventor： HEMKER DAVID J ,  SHEET LUBAB L ,  MARKS JEFFREY

IPC: B65G49/07 ,  H01L21/00

CPC classification number: H01L21/3065 ,  C23C16/54 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/6776 ,  H01L21/68764 ,  H01L21/68771

Abstract: A plurality of substrate processing devices are disposed in a separated manner within a shared ambient environment. A conveyance device is disposed within the shared ambient environment and is defined to move a substrate through and between each of the substrate processing devices in a continuous manner. Some substrate processing devices are defined to perform dry substrate processing operations in which an energized reactive environment is created in exposure to the substrate in an absence of liquid material. Some substrate processing devices are defined to perform wet substrate processing operations in which at least one material in a liquid state is applied to the substrate. In one embodiment, a complementary pair of dry and wet substrate processing devices are disposed in the shared ambient environment in a sequential manner relative to movement of the substrate by the conveyance device.

Abstract translation: 多个基板处理装置以分离的方式设置在共享的周围环境中。 传送装置设置在共享的周围环境内并且被限定为以连续的方式移动基板穿过并且在每个基板处理装置之间。 一些基板处理设备被定义为执行干式基板处理操作，其中在没有液体材料的情况下暴露于基板时产生通电的反应性环境。 定义一些基板处理装置以执行湿式基板处理操作，其中将至少一种液态材料施加到基板。 在一个实施例中，干式和湿式衬底处理装置的互补对以相对于由输送装置移动衬底的顺序方式布置在共享的周围环境中。

公开(公告)号：WO0173813A3

公开(公告)日：2002-03-14

申请号：PCT/US0108712

申请日：2001-03-16

Applicant: LAM RES CORP ,  BAILEY ANDREW D ,  HEMKER DAVID J

Inventor： BAILEY ANDREW D ,  HEMKER DAVID J

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32623 ,  H01J37/32688

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and further includes a plasma confinement arrangement. The plasma confinement arrangement includes a magnetic array disposed around the periphery of the process chamber configured to produce a magnetic field which establishes a cusp pattern on the wall of the chamber. The cusp pattern on the wall of the chamber defines areas where a plasma might damage or create cleaning problems. The cusp pattern is shifted to improve operation of the substrate processing system and to reduce the damage and/or cleaning problems caused by the plasma's interaction with the wall. Shifting of the cusp pattern can be accomplished by either moving the magnetic array or by moving the chamber wall. Movement of either component may be continuous (that is, spinning one or more magnet elements or all or part of the wall) or incremental (that is, periodically shifting the position of one or more magnet elements or all or part of the wall).

Abstract translation: 用于在处理处理室内处理衬底的同时控制等离子体的体积的等离子体限制装置包括其中等离子体都被点燃并持续进行处理的室。 腔室至少部分地由壁限定，并且还包括等离子体限制装置。 等离子体约束装置包括围绕处理室的周边设置的磁性阵列，其被配置为产生在腔室的壁上建立尖点图案的磁场。 腔室壁上的尖点图案限定了等离子体可能损坏或产生清洁问题的区域。 尖头图案被移动以改善基板处理系统的操作并且减少由等离子体与壁的相互作用引起的损坏和/或清洁问题。 尖点图案的移动可以通过移动磁阵列或通过移动室壁来实现。 任何一个组件的运动可以是连续的（即，旋转一个或多个磁体元件或全部或部分壁）或增量（即，周期性地移动一个或多个磁体元件或全部或部分壁的位置）。

公开(公告)号：WO03082522A8

公开(公告)日：2004-12-09

申请号：PCT/US0309421

申请日：2003-03-26

Applicant: LAM RES CORP

Inventor： WILLIAMS DAMON V ,  KISTLER RODNEY ,  HEMKER DAVID J ,  GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER ,  MOREL BRUNO

IPC: B24B37/005 ,  B24B49/02 ,  B24B49/10 ,  B24B49/14 ,  H01L21/304 ,  H01L21/66 ,  B24B49/12

CPC classification number: B24B37/005 ,  B24B49/10 ,  B24B49/14

Abstract: In chemical mechanical polishing apparatus, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.

Abstract translation: 在化学机械抛光装置中，晶片承载板设置有用于接收位于非常接近待抛光晶片的传感器的空腔。 由抛光垫与晶片的暴露表面之间的接触所产生的能量仅传播到传感器非常短的距离，并由传感器感测，提供关于晶片的暴露表面的性质的数据以及 这些属性的转换。 相关方法提供了将感测能量与表面性质和转变相关联的图。 相关图提供过程控制的过程状态数据。

公开(公告)号：WO0175617A3

公开(公告)日：2002-06-27

申请号：PCT/US0108719

申请日：2001-03-19

Applicant: LAM RES CORP

Inventor： HUANG CHUNG-HO ,  HEMKER DAVID J ,  LUI ANDREW

IPC: H01L21/02 ,  G06F13/40 ,  G05B19/042

CPC classification number: G06F13/4081

Abstract: A process chamber with a computer system that controls the process chamber is connected to one or more sensors, which are used to monitor the process in the process chamber. The sensors are connected to the computer system in a client/server relationship, in a way that allows the sensors to be hot swappable plus and play sensors. The computer system exchanges various messages with the sensors, synchronizes with the sensors, and integrates and utilizes data sent from the sensors.

Abstract translation: 具有控制处理室的计算机系统的处理室连接到用于监视处理室中的处理的一个或多个传感器。 传感器以客户端/服务器关系连接到计算机系统，使传感器能够热插拔加上播放传感器。 计算机系统与传感器交换各种信息，与传感器同步，并集成和利用从传感器发送的数据。

公开(公告)号：AU1606101A

公开(公告)日：2001-05-30

申请号：AU1606101

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: C23C16/507 ,  B05D7/24 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

公开(公告)号：SG10201600021UA

公开(公告)日：2016-08-30

申请号：SG10201600021U

申请日：2016-01-04

Applicant: LAM RES CORP

Inventor： LILL THORSTEN ,  BERRY III IVAN L ,  SHEN MEIHUA ,  SCHOEPP ALAN M ,  HEMKER DAVID J

公开(公告)号：DE60040611D1

公开(公告)日：2008-12-04

申请号：DE60040611

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

Abstract: A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.

公开(公告)号：AU2002360612A1

公开(公告)日：2003-07-24

申请号：AU2002360612

申请日：2002-12-13

Applicant: LAM RES CORP

Inventor： HEMKER DAVID J ,  BRIGHT NICHOLAS

IPC: H01L21/304 ,  B24B37/015 ,  B24B37/04 ,  B24B37/30 ,  B24B49/14 ,  H01L21/302

Abstract: Apparatus controls the temperature of a wafer for chemical mechanical polishing operations. A wafer carrier wafer mounting surface positions a wafer adjacent to a thermal energy transfer unit for transferring energy relative to the wafer. A thermal energy detector oriented adjacent to the wafer mounting surface detects the temperature of the wafer. A controller is responsive to the detector for controlling the supply of thermal energy relative to the thermal energy transfer unit. Embodiments include defining separate areas of the wafer, providing separate sections of the thermal energy transfer unit for each separate area, and separately detecting the temperature of each separate area to separately control the supply of thermal energy relative to the thermal energy transfer unit associated with the separate area.

公开(公告)号：AU1767401A

公开(公告)日：2001-05-30

申请号：AU1767401

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.