Abstract:
A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate
Abstract:
A system and method for planarizing a patterned semiconductor substrate (100) includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate (100) having a conductive interconnect material (120) filling multiple of features in the pattern. The conductive interconnect material has an overburden portion (112). The overburden portion has a localized non-uniformity. A bulk portion of the overburden portion is removed to planarize the overburden portion (120). The substantially locally planarized overburden portion is mapped to determine a global non-uniformity. The substantially locally planarized overburden portion is etched to substantially remove the global non-uniformity.
Abstract:
A system and method of measuring a metallic layer on a substrate within a multi-step substrate process includes modifying a metallic layer on the substrate such as forming a metallic layer or removing at least a portion of the metallic layer. At least one sensor is positioned a predetermined distance from the surface of the substrate. The surface of the substrate is mapped to determine a uniformity of the metallic layer on the surface of the substrate.
Abstract:
A semiconductor processing system is provided. The system includes a sensor configured to detect a signal representing a thickness of a film disposed on a surface of a substrate. A first nozzle configured to apply a first fluid to a surface of a polishing pad is included. A fluid restraining device located upstream from the first nozzle is provide. The fluid restraining device is configured to evenly distribute the slurry over the surface of the polishing pad. A second nozzle located upstream from the fluid restraining device is included. The second nozzle is configured to apply a second fluid to the evenly distributed slurry. A CMP system and a method for applying differential removal rates to a surface of a substrate are also provided.
Abstract:
A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate (100). The patterned semiconductor substrate includes a conductive interconnect material (120) filling multiple of features (102, 104,106) in the pattern. The conductive interconnect material having an overburden portion (112). The overburden portion (112) includes a localized non-uniformity (indicated in variations 114, 116, 118). An additional layer (202) is formed an the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.
Abstract:
A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.
Abstract:
A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion includes a localized non-uniformity. An additional layer is formed an the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.
Abstract:
A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored (140). Then, an expected value at a current point of the process being monitored is predicted (142). Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated (144). Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value (146). Next, a transition point for the process being monitored is identified based on the detection of the deviation value (148). A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.
Abstract:
A METHOD FOR PROCESSING A SUBSTRATE IS PROVIDED WHICH INCLUDES GENERATING A MENISCUS (112) ON THE SURFACE OF THE SUBSTRATE (108) AND APPLYING PHOTOLITHOGRAPHY LIGHT THROUGH THE MENISCUS (112) TO ENABLE PHOTOLITHOGRAPHY PROCESSING OF A SURFACE OF THE SUBSTRATE (108).