公开(公告)号：AU7793001A

公开(公告)日：2002-03-04

申请号：AU7793001

申请日：2001-07-19

Applicant: LAM RES CORP

Inventor： SALDANA MIGUEL A ,  BOYD JOHN M ,  GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER A

IPC: B24B37/20 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  H01L21/306

Abstract: A chemical mechanical polishing (CMP) system is provided. A carrier has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer having a one or more formed layers to be prepared. A preparation head is also included and is designed to be applied to at least a portion of the wafer that is less than an entire portion of the surface of the wafer. Preferably, the preparation head and the carrier are configured to rotate in opposite directions. In addition, the preparation head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer to an edge of the wafer and from the edge of the wafer to the center of the wafer so as to facilitate precision controlled removal of material from the formed layers of the wafer.

公开(公告)号：SG171574A1

公开(公告)日：2011-06-29

申请号：SG2010089126

申请日：2010-11-30

Applicant: LAM RES CORP

Inventor： KANG MICHAEL S ,  KELLOGG MICHAEL C ,  SALDANA MIGUEL A ,  TAYLOR TRAVIS R

Abstract: An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring. FIG. 2A

公开(公告)号：AU2002254492A1

公开(公告)日：2002-10-15

申请号：AU2002254492

申请日：2002-03-28

Applicant: LAM RES CORP

Inventor： WILLIAMS DAMON VINCENT ,  SALDANA MIGUEL A

IPC: B24B37/04 ,  B24B37/16 ,  B24B37/32 ,  H01L21/304 ,  B24B49/16 ,  B24B41/06

Abstract: A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface (210) of a wafer carrier (210) so that a wafer axis (224) of rotation is gimballed for universal movement relative to a spindle axis (218) of rotation of a wafer spindle (220). A retainer ring (226) limits wafer movement on the carrier surface (210) perpendicular to the wafer axis (224). The retainer ring (226) is mounted on and movable relative to the wafer carrier (212). A linear bearing (230) is configured with a housing (320) and a shaft (326) so that a direction of permitted movement between the wafer carrier (212) and the retainer ring (226) is only movement parallel to the wafer axis (224), so that a wafer plane and a retainer ring (226) may be co-planar.

公开(公告)号：AU7003701A

公开(公告)日：2002-01-14

申请号：AU7003701

申请日：2001-06-22

Applicant: LAM RES CORP

Inventor： SALDANA MIGUEL A ,  OWCZARZ ALEKSANDER A

IPC: B24B7/20 ,  B24B21/00 ,  B24B21/04 ,  B24B37/04 ,  H01L21/304

Abstract: A chemical mechanical polishing (CMP) apparatus is provided. The CMP apparatus includes a first roller situated at a first point and a second roller situated at a second point. The first point is separate from the second point. Also included in the apparatus is a polishing pad strip having a first end secured to the first roller and a second end secured to the second roller. The first roller and the second roller are configured to reciprocate so that the polishing pad strip oscillates at least partially between the first point and the second point.

公开(公告)号：SG178585A1

公开(公告)日：2012-03-29

申请号：SG2012013629

申请日：2010-08-26

Applicant: LAM RES CORP

Inventor： SALDANA MIGUEL A ,  SEXTON GREG

Abstract: An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber is disclosed. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve. Wherein the crossover valve, edge enable valve, and center enable valve allow one of tuning fluid or process fluids to flow to one of the edge fluid supply or the center fluid supply.

公开(公告)号：FR2953327A1

公开(公告)日：2011-06-03

申请号：FR1059905

申请日：2010-11-30

Applicant: LAM RES CORP

Inventor： KANG MICHAEL S ,  KELLOGG MICHAEL C ,  SALDANA MIGUEL A ,  TAYLOR TRAVIS R

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/683

Abstract: An outer cylindrical surface has lower and upper surfaces which are vertical to center axis line of outer side cylindrical surface and are extended from lower and upper peripheries of outer surface. An electrically conductive edge ring (280) has lower and upper surfaces which are vertical to center axis line, and are extended from lower and upper periphery. The annular surfaces are vertical to center axis line, and are extended from upper and lower peripheries. The cylindrical surface is extended from inner periphery of annular surfaces to outer peripheral edge.

公开(公告)号：AU2002252540A1

公开(公告)日：2002-10-15

申请号：AU2002252540

申请日：2002-03-27

Applicant: LAM RES CORP

Inventor： SALDANA MIGUEL A

IPC: B24B37/005 ,  B24B37/30 ,  B24B49/16 ,  G01R31/28 ,  G05B19/408 ,  G06F19/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/461 ,  H03M1/70 ,  H03M7/24 ,  B24B37/04

Abstract: CMP methods in which a polishing pad is moved relative to a wafer and a retainer ring implement instructions for applying required pressure to the wafer for CMP operations. Accuracy of computations of the pressures, and of conversion of the pressure to force, is improved without use of high resolution components, such as high resolution digital devices. Such improved accuracy is achieved using both digital and analog operations, and by converting values of required pressure or force from one set of units to a second set of units and then back to the first set of units. A quantization process is performed using data processed by average resolution digital devices. The process transfers both pressure/force scale and pressure/force set point data between separate processors to obtain computed values of pressure and force having acceptable accuracy, such that quantization errors are eliminated or significantly reduced.

公开(公告)号：AU8522601A

公开(公告)日：2002-03-04

申请号：AU8522601

申请日：2001-08-22

Applicant: LAM RES CORP

Inventor： SALDANA MIGUEL A ,  WILLIAMS DAMON VINCENT

IPC: B24B41/04 ,  B24B41/06 ,  B24B49/16 ,  B24B53/007 ,  H01L21/304 ,  H01L21/306 ,  B24B37/00

Abstract: CMP systems and methods implement instructions for moving a polishing pad (202) relative to a wafer (206) and a retainer ring (282) and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer (206), a pad conditioning puck (220), and the retainer ring (282) are separately urged into contact with the polishing pad (202) so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor (2106) is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor (2106) by a force controller (2302), and the central processor (2106) manages data transfer to the force controller.