公开(公告)号：DE69611282T2

公开(公告)日：2001-04-26

申请号：DE69611282

申请日：1996-12-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ANIGBO FELIX ,  DAUTARTAS MINDAUGAS FERNAND ,  MACDONALD WILLIAM MICHAEL ,  PITMAN EDWARD A ,  RAMSEY DAVID ANDREW ,  RINAUDO DOMINIC PAUL ,  WONG YIU-HUEN

IPC: G01J1/02 ,  G02B6/32 ,  G02B6/42 ,  H01L21/66 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022

Abstract: There is disclosed, an optical subassembly (10) includes a platform (12) on which a laser (18) and photodiode (14) are mounted. The laser (18) has a rear facet (42) through which passes a small portion of the light emitted by the laser (18). The photodiode (14) is mounted on the surface of the platform with a light admitting facet (44) for receiving a portion of the light emitted from the rear facet (42) of the laser being substantially perpendicular to the light emitting facet (42) of the laser. The surface of the platform may include a channel (34). The channel (34) may be tapered from a narrower end (36) near the laser (18) to a wider end (38) near the photodiode (14), and may be coated with a light-reflective material.

公开(公告)号：BR0004003A

公开(公告)日：2001-04-17

申请号：BR0004003

申请日：2000-09-05

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KORISCH ILYA ALEXANDER ,  TSAI MING-JU ,  WONG YIU-HUEN ,  MANZIONE LOUIS THOMAS

IPC: H01Q13/08 ,  H01Q1/00 ,  H01Q1/24 ,  H01Q1/38 ,  H01Q1/42 ,  H01Q9/04 ,  H01Q23/00

公开(公告)号：GB2344694A

公开(公告)日：2000-06-14

申请号：GB9929376

申请日：1999-12-10

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KIZILYALLI ISIK C ,  MERCHANT SAILESH MANSINH ,  ROY PRADIP KUMAR ,  WONG YIU-HUEN

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/285 ,  H01L21/82 ,  H01L21/8242

Abstract: Tungsten nitride (WN) and/or tungsten silicide nitride (WSiN) diffusion barrier layers are situated between a titanium electrode and a tantalum pentoxide (Ta 2 O 5 ) dielectric layer of a DRAM capacitor. The diffusion barrier layer(s) prevent reaction between the titanium electrode and the tantalum pentoxide during thermal processing of the device structure.

公开(公告)号：DE69806300T2

公开(公告)日：2003-04-03

申请号：DE69806300

申请日：1998-03-24

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MACDONALD WILLIAM MICHAEL ,  WONG YIU-HUEN

IPC: G02B6/32 ,  G02B6/36 ,  G02B6/42 ,  H01S5/00

Abstract: A subassembly for coupling a laser to an optical fiber (19) comprises a substrate (10) having an asymmetrical, pyramidal cavity (13), a spherical lens (15) located in the cavity, and a semiconductor laser (17) positioned on the substrate. The output face of the laser is located along an edge (14) of the cavity (without overhanging the edge), and its active region (17.1) is aligned with the center (15.1) of the lens along the optic axis (16) of the subassembly.

公开(公告)号：CA2318597C

公开(公告)日：2002-12-17

申请号：CA2318597

申请日：2000-09-12

Applicant: LUCENT TECHNOLOGIES INC

Inventor： WONG YIU-HUEN ,  TSAI MING-JU ,  MANZIONE LOUIS THOMAS ,  KORISCH ILYA ALEXANDER

IPC: H01Q13/08 ,  H01Q1/00 ,  H01Q1/24 ,  H01Q1/38 ,  H01Q1/42 ,  H01Q9/04 ,  H01Q23/00 ,  H01Q1/12 ,  H01Q1/36 ,  H04Q7/32

Abstract: An antenna package for use in a wireless communications device. The package includes a metallic leadframe section having a plurality of leads and a paddle shaped as a planar antenna, and dielectric material encapsulating the paddle and portions of the leads.

公开(公告)号：CA2318597A1

公开(公告)日：2001-03-15

申请号：CA2318597

申请日：2000-09-12

Applicant: LUCENT TECHNOLOGIES INC

Inventor： WONG YIU-HUEN ,  TSAI MING-JU ,  MANZIONE LOUIS THOMAS ,  KORISCH ILYA ALEXANDER

IPC: H01Q13/08 ,  H01Q1/00 ,  H01Q1/24 ,  H01Q1/38 ,  H01Q1/42 ,  H01Q9/04 ,  H01Q23/00 ,  H01Q1/12 ,  H01Q1/36 ,  H04Q7/32

Abstract: An antenna package for use in a wireless communications device. The package includes a metallic leadframe section having a plurality of leads and a paddle shaped as a planar antenna, and dielectric material encapsulating the paddle and portions of the leads.

公开(公告)号：AU4884000A

公开(公告)日：2001-02-01

申请号：AU4884000

申请日：2000-07-26

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MANFRA MICHAEL JAMES ,  PFEIFFER LOREN NEIL ,  WEST KENNETH WILLIAM ,  WONG YIU-HUEN

IPC: C23C14/06 ,  C23C16/34 ,  H01L41/08 ,  H01L41/22 ,  H03H3/02 ,  H03H9/15 ,  H03H9/17 ,  H01L41/24

Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.

公开(公告)号：CA2314375C

公开(公告)日：2003-11-18

申请号：CA2314375

申请日：2000-07-24

Applicant: LUCENT TECHNOLOGIES INC

Inventor： WONG YIU-HUEN ,  PFEIFFER LOREN NEIL ,  MANFRA MICHAEL JAMES ,  WEST KENNETH WILLIAM

IPC: C23C14/06 ,  C23C16/34 ,  H01L41/08 ,  H01L41/22 ,  H03H3/02 ,  H03H9/15 ,  H03H9/17 ,  H01P11/00 ,  H01P7/00

Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric fi lm which is epitaxially grown on a growing surface, resulting in a piezoelectri c film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxiall y growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.

公开(公告)号：BR0002976A

公开(公告)日：2001-03-13

申请号：BR0002976

申请日：2000-07-19

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MANFRA MICHAEL JAMES ,  PFEIFFER LOREN NEIL ,  WEST KENNETH WILLIAM ,  WONG YIU-HUEN

IPC: C23C14/06 ,  C23C16/34 ,  H01L41/08 ,  H01L41/22 ,  H03H3/02 ,  H03H9/15 ,  H03H9/17 ,  H04R17/10

Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.

公开(公告)号：DE69929409T2

公开(公告)日：2006-09-21

申请号：DE69929409

申请日：1999-11-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CLEMENS JAMES T ,  DIODATO PHILIP W ,  WONG YIU-HUEN

IPC: G11C11/412 ,  H01L27/11 ,  G11C11/413 ,  H01L21/8244

Abstract: An apparatus and method for constructing a capacitor loaded memory cell. This capacitor loaded memory cell operates as a static random access memory (SRAM) cell if a particular capacitor and transistor configuration is used. Normally, capacitors are not an obvious choice as a load device for a memory cell because the intrinsic nature of capacitors is one that blocks the flow of direct current, the invention takes into account the secondary effects such as leakage of a particular dielectric used in the construction of the capacitor to modify the current blocking nature of the capacitor.