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公开(公告)号：US20160169738A1
公开(公告)日：2016-06-16
申请号：US14964927
申请日：2015-12-10
Applicant: MELEXIS TECHNOLOGIES NV
Inventor： Appolonius Jacobus VAN DER WIEL
IPC: G01J1/42
CPC classification number: G01J1/4228 , G01J1/1626 , G01J5/0225 , G01J5/024 , G01J5/0285 , G01J5/045 , G01J5/06 , G01J5/061 , G01J5/12 , G01J5/14 , G01J5/20 , G01J2005/0048 , G01J2005/063 , G01J2005/065 , G01J2005/066 , G01J2005/068
Abstract: A semiconductor device for measuring IR radiation is disclosed. It comprises a substrate and a cap enclosing a cavity, a sensor pixel in the cavity, comprising a first absorber for receiving said IR radiation, a first heater, first temperature measurement means for measuring a first temperature; a reference pixel in the same cavity, comprising a second absorber shielded from said IR radiation, a second heater, and second temperature measurement means for measuring a second temperature; a control circuit for applying a first/second power to the first/second heater such that the first temperature equals the second temperature; and an output circuit for generating an output signal indicative of the IR radiation based on a difference between the first and second power.
Abstract translation: 公开了一种用于测量IR辐射的半导体器件。 它包括衬底和封闭空腔的盖，空腔中的传感器像素，包括用于接收所述IR辐射的第一吸收体，第一加热器，用于测量第一温度的第一温度测量装置; 相同空腔中的参考像素，包括屏蔽所述IR辐射的第二吸收体，第二加热器和用于测量第二温度的第二温度测量装置; 控制电路，用于将第一/第二功率施加到第一/第二加热器，使得第一温度等于第二温度; 以及输出电路，用于基于第一和第二功率之间的差产生指示IR辐射的输出信号。
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公开(公告)号：US20160159639A1
公开(公告)日：2016-06-09
申请号：US14903709
申请日：2014-07-09
Applicant: MELEXIS TECHNOLOGIES NV
Inventor： Appolonius Jacobus VAN DER WIEL
CPC classification number: B81B7/0038 , B81B7/0051 , B81C1/00285 , B81C2203/0145 , H01L2924/16235
Abstract: An electronic device comprising a first substrate having a device area, a first sealing element comprising an anelastic material and a second sealing element being a metal. The first sealing means and the second sealing means are arranged such that the inner side or the outer side of the sealing is completely formed by the second sealing element providing hermiticity and the other side is substantially formed by the first sealing element providing a flexible sealing.
Abstract translation: 一种电子装置，包括具有装置区域的第一基板，包括非弹性材料的第一密封元件和作为金属的第二密封元件。 第一密封装置和第二密封装置被布置成使得密封件的内侧或外侧由提供密封性的第二密封元件完全形成，另一侧基本上由提供柔性密封的第一密封元件形成。
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公开(公告)号：US20150311353A1
公开(公告)日：2015-10-29
申请号：US14735369
申请日：2015-06-10
Applicant: MELEXIS TECHNOLOGIES NV
Inventor： Appolonius Jacobus VAN DER WIEL
CPC classification number: G01L1/18 , G01L9/0055 , G01L9/065 , G01L19/02
Abstract: A semiconductor pressure sensor for measuring an external pressure exerted on the sensor, comprises: a membrane; a first resistor connected between a first bias node and a first output node; a second resistor connected between said first bias node and a second output node; a first and second current source connected to the first resp. second output node for generating a differential voltage signal indicative of the external pressure to be measured. The resistors comprise piezo-resistive strips arranged in particular crystallographic directions. The circuit may have a third and four resistor pair for compensating package stress. The Piezo-resistive strips may be formed as p-doped regions within an n-well, the biasing node being electrically connected to the n-well.
Abstract translation: 一种用于测量施加在传感器上的外部压力的半导体压力传感器，包括：膜; 连接在第一偏置节点和第一输出节点之间的第一电阻器; 连接在所述第一偏置节点和第二输出节点之间的第二电阻器; 连接到第一和第二电流源的第一和第二电流源。 第二输出节点，用于产生指示要测量的外部压力的差分电压信号。 电阻器包括布置在特定晶体方向上的压阻条。 电路可以具有用于补偿封装应力的第三和四个电阻器对。 压电阻带可以形成为n阱内的p掺杂区域，偏压节点电连接到n阱。
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公开(公告)号：US20230249962A1
公开(公告)日：2023-08-10
申请号：US18303109
申请日：2023-04-19
Applicant: Melexis Technologies NV
Inventor： Appolonius Jacobus VAN DER WIEL
CPC classification number: B81B7/0051 , B81C1/00325 , G01L9/0072 , B81B2201/0264 , B81B2203/0127 , B81B2207/098 , B81C1/0046 , B81C2203/0154
Abstract: A method of manufacturing a sensor device comprising: configuring a moulding support structure and a packaging mould so as to provide predetermined pathways to accommodate a moulding compound, the moulding support structure defining a first notional volume adjacent a second notional volume. An elongate sensor element and the moulding support structure are configured so that the moulding support structure fixedly carries the elongate sensor element and the elongate sensor element resides substantially in the first notional volume and extends towards the second notional volume, the elongate sensor element having an electrical contact electrically coupled to another electrical contact disposed within the second notional volume. The moulding support structure carrying (102) the elongate sensor element is disposed within the packaging mould (106). The moulding compound is then introduced (110) into the packaging mould during a predetermined period of time (112) so that the moulding compound fills the predetermined pathways, thereby filling the second notional volume and surrounding the elongate sensor element within the second notional volume without contacting the elongate sensor element.
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公开(公告)号：US20200072692A1
公开(公告)日：2020-03-05
申请号：US16557213
申请日：2019-08-30
Applicant: Melexis Technologies NV
Inventor： Laurent OTTE , Appolonius Jacobus VAN DER WIEL , Jian CHEN
Abstract: A pressure sensor device comprises a device package (110) arranged to define a cavity (116) having an opening for fluid communication with an internal volume thereof. The cavity (116) comprises a side wall (114, 115). An elongate pressure sensor element (100) is provided and has a proximal end (120) and a distal end (122). The side wall (114, 115) is arranged to hold fixedly the proximal end (120) of the pressure sensor element (100) therein so that the pressure sensor element (100) is cantilever-suspended from the side wall (114, 115) within the cavity (116).
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Patent Agency Ranking
公开(公告)号：US20180218937A1
公开(公告)日：2018-08-02
申请号：US15883487
申请日：2018-01-30
Applicant: Melexis Technologies NV
Inventor： Appolonius Jacobus VAN DER WIEL
IPC: H01L21/768 , H01L23/532 , H01L23/538
CPC classification number: H01L21/7685 , H01L21/76873 , H01L23/53252 , H01L23/5384 , H01L24/03 , H01L24/05 , H01L2224/02126 , H01L2224/031 , H01L2224/0345 , H01L2224/03462 , H01L2224/03472 , H01L2224/03474 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05556 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/05681 , H01L2224/48091 , H01L2224/48145 , H01L2224/48247 , H01L2224/85205 , H01L2924/1815 , H01L2924/00014 , H01L2924/01074 , H01L2924/01007
Abstract: A method for making and a semiconductor device comprises a silicon die including a metal contact region and, at least one passivation layer covering the semiconductor die and patterned such as to form an opening to the metal contact region of the semiconductor die. A continuous part of a contact layer comprises a refractory metal, and overlaps and completely covers the opening in the at least one passivation layer to contact the metal contact region in the opening and adhere to the at least one passivation layer along the entire edge of the continuous part. The contact layer comprises at least an adhesion layer and at least a diffusion barrier layer. A noble metal layer is arranged over the contact layer and completely covers the continuous part to adhere to the at least one passivation layer around the edge of the continuous part.
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公开(公告)号：US20150179861A1
公开(公告)日：2015-06-25
申请号：US14578701
申请日：2014-12-22
Applicant: MELEXIS TECHNOLOGIES NV
Inventor： Ben MAES , Carl VAN BUGGENHOUT , Appolonius Jacobus VAN DER WIEL
CPC classification number: H01L31/09 , G01J5/02 , G01J5/024 , G01J5/12 , G01J5/20 , H01L27/14669 , H01L27/14683 , H01L31/18
Abstract: The invention relates to an infrared thermal sensor comprising a substrate having a cavity, a cavity bottom wall formed by a continuous substrate surface. The sensor comprises a membrane adapted for receiving heat from incident infrared radiation, a beam suspending the membrane, and a thermocouple. This membrane comprises openings extending through the membrane for facilitating the passage of an anisotropic etchant for etching the cavity during manufacture. Each opening has a cross-section with a length to width ratio of at least 4. The width direction of respectively a first and a second set of openings is oriented according to respectively a first crystallographic orientation and a second crystallographic orientation, these orientations corresponding to different directions lying in loosely packed crystal lattice faces of the semiconductor substrate.
Abstract translation: 本发明涉及一种红外热传感器，其包括具有空腔的基板，由连续基板表面形成的空腔底壁。 传感器包括适于从入射的红外辐射接收热量的膜，悬挂膜的光束和热电偶。 该膜包括延伸穿过膜的开口，以便在制造期间便于各向异性蚀刻剂通过蚀刻腔。 每个开口具有长宽比至少为4的横截面。分别第一组和第二组开口的宽度方向分别根据第一结晶取向和第二结晶取向取向，这些取向对应于 不同的方向位于半导体衬底的松散堆积的晶格面上。
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公开(公告)号：US20220136915A1
公开(公告)日：2022-05-05
申请号：US17518746
申请日：2021-11-04
Applicant: Melexis Technologies NV
Inventor： Johan VERGAUWEN , Ben MAES , Maliheh RAMEZANI , Appolonius Jacobus VAN DER WIEL
IPC: G01L1/22
Abstract: A controller configured for monitoring disturbances of a pressure sensor assembly includes at least two sensors. The at least two sensors are configured for measuring a pressure and wherein the at least two sensors have a sensor dependent measurement sensitivity for the pressure, and at least one of the sensors is sensitive for a disturbance with a sensor dependent disturbance sensitivity. A ratio of the measurement sensitivity and the disturbance sensitivity is different for the at least two sensors. The controller is configured for detecting the disturbance by comparing outputs of the at least two sensors.
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公开(公告)号：US20210175410A1
公开(公告)日：2021-06-10
申请号：US17111871
申请日：2020-12-04
Applicant: Melexis Technologies NV
Inventor： Appolonius Jacobus VAN DER WIEL , Maliheh RAMEZANI , Cathleen ROOMAN , Laurent OTTE , Johan VERGAUWEN
IPC: H01L41/113 , H01L41/047 , H01L41/053 , G01L1/18
Abstract: A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.
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公开(公告)号：US20190385922A1
公开(公告)日：2019-12-19
申请号：US16438799
申请日：2019-06-12
Applicant: Melexis Technologies NV
Inventor： Appolonius Jacobus VAN DER WIEL
IPC: H01L23/31 , H01L29/16 , H01L23/528 , H01L23/532 , H01L23/522 , H01L23/29 , H01L21/02 , H01L35/22 , H01L29/84 , H01L29/04 , H01L21/56
Abstract: A semiconductor device comprising a first and second doped semiconductor layer wherein the first layer is a monosilicon layer and the second layer is a polysilicon layer, an oxide layer covering the first and second layer, and an interconnect which electrically connects the first and second layer comprises a metal alloy which has a first part in contact with the first layer and a second part in contact with the second layer, wherein a part of the metal alloy between the first and the second part crosses over a sidewall of the second layer; at least one electronic component is formed in the first and/or second layer; the semiconductor device moreover comprises a stoichiometric passivation layer which covers the first and second layer and the oxide layer.
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