Abstract:
A high voltage switching regulator has significantly reduced current sensing delay between measurement of input current and generation of sensed current values, while maintaining good accuracy of the current through a power transistor using current replication and a current conveyor. High sensing accuracy of the input current ensures good load regulation, and low sensing delay ensures fixed duty cycle over a wide range of output currents and high input to output voltage ratios. A current conveyor is used to transfer high side current values to low side control circuits, e.g., pulse width modulation (PWM) control. The current conveyor is always on, e.g., some current flow is always present, thus minimizing any current measurement delay. This is accomplished by dynamically biasing the current conveyor by draining to ground a current equal to the sensed current. Wherein balancing of the current conveyor is ensured and offset at the input of the current conveyor is minimized.
Abstract:
A multi-bit digital-to-analog converter has a reference voltage generator generating a reference voltage with an offset voltage; a.switched capacitor stage for generating a plurality of output voltages; and a switching sequencer controlling the switched capacitor stage operable to generate switching patterns for each output voltages, wherein each pattern has a charge phase and a transfer phase, and wherein for at least one output voltage the switching sequencer provides two switching patterns wherein each switching pattern contributes an offset of opposite polarity.
Abstract:
Un aparato para la reducción de los tonos de inactividad no deseados mediante la adición de una señal aleatoria a una señal digital en un convertidor de digital a analógico Sigma-Delta de bit múltiple (DAC), que comprende: un modulador de bits múltiples Sigma-Delta (202; 502) que tiene una entrada y una salida de señal digital (212; 512), el modulador Sigma-Delta de bit múltiple (202; 502) comprendiendo: un filtro de bucle digital (110; 510) que recibe la señal de entrada digital, y que convierte la señal a palabras digitales de L bit en secuencia; y el cuantificador de resolución variable (208; 508) que recibe las palabras digitales de L bit en una secuencia y que emite una palabra digital respectiva de M bit; en donde M > 1 y L > M; el aparato comprendiendo además un convertidor de digital a analógico de bit múltiple (DAC) que tiene una salida analógica y una entrada digital que recibe la palabra digital respectiva de M bit; y un filtro analógico de paso bajo (106; 105) que tiene una entrada analógica acoplada a la salida analógica del DAC de bit múltiple; el filtro de paso bajo analógico emite una señal de salida analógica respectiva; el aparato se caracteriza porque, el modulador de múltiples bits sigma delta (202; 502) comprende además un generador de secuencia aleatoria (214; 514), el generador de secuencia aleatoria (214; 514) genera una pluralidad de números aleatorios N(n) en una secuencia, en donde cada número aleatorio N(n) es un número entero aleatorio entre 1 y M; y el cuantificador de resolución variable (208; 508) se controla por el generador de secuencia aleatoria (214; 514) y adaptado para reducir la resolución de la palabra digital respectiva de L bit a una palabra digital respectiva de N(n) bits en función del respectivo número aleatorio N(n); y cuando M es mayor que el respectivo número aleatorio N(n), añadir M-N(n) bits menos significativos, comprendiendo cada uno un cero, a esta palabra digital respectiva de N(n) bits para generar la palabra de M-bit respectiva.
Abstract:
Adaptive electrostatic discharge (ESD) protection of a device interface has very good ESD robustness when it is handled or when installed into or removed from a system. And has robust immunity to DPI, electromagnetic interference (EMI) and the like, when it is operational in a system. There is a significant capacitive coupling between the drain and gate of a ESD protection metal oxide semiconductor (MOS) device to enhance ESD protection and lower snap back voltage thereof whenever there is no (or a low level) DPI on the external connection to be protected. Whereupon when a significant DPI/EMI signal is detected on the external connection, the capacitive coupling between the drain and gate of the MOS ESD protection device is disconnected, bypassed or attenuated so that DPI/EMI immunity of the device is enhanced.
Abstract:
The present invention is directed to the isolation and cancellation of the offset voltage component typically experienced at the input of sampled-data analog systems. In an exemplary embodiment, offset isolation and cancellation may be performed during normal operation of the sampling circuitry. In an exemplary embodiment, the present invention combines a front-end switching topology with one or more differential integrator stages and a logic algorithm implemented in the differential integrator stages. In operation, the circuitry preferably performs a number of samples for each stage, applies an inversion factor to the samples in accordance with the algorithm and integrates the samples to effect the cancellation of the offset voltage without substantially affecting the sampled input.
Abstract:
The present invention is directed to the isolation and cancellation of the offset voltage component typically experienced at the input of sampled-data analog systems. In an exemplary embodiment, offset isolation and cancellation may be performed during normal operation of the sampling circuitry. In an exemplary embodiment, the present invention combines a front-end switching topology with one or more differential integrator stages and a logic algorithm implemented in the differential integrator stages. In operation, the circuitry preferably performs a number of samples for each stage, applies an inversion factor to the samples in accordance with the algorithm and integrates the samples to effect the cancellation of the offset voltage without substantially affecting the sampled input.
Abstract:
An electronic amplifier circuit comprising an operational amplifier circuit, such as a two-stage operational amplifier circuit, in tandem with a operational transconductance amplifier. The electronic amplifier circuit has high open-loop gain and high gain-bandwidth while maintaining stability over a wide range of operating parameters.
Abstract:
A multi-bit (M-bit, M> 1 ) or multi-level (nlev levels, nlev>2, encoded on M bits where M=Floor(log2(nlev))) sigma-delta analog-to-digital converter (ADC) with a variable resolution multi-bit quantizer having its resolution (number of distinct output levels) and associated quantization thresholds changed for each voltage sample with a random or pseudo-random sequence N(n) to provide automatic dynamic dithering for removing undesired idle tones in the digital output of the sigma-delta ADC. The random integer numbers N(n) between 2 and nlev may be provided by a random or pseudo-random sequence generator, e.g., Galois linear feedback shift register in combination with digital comparators and an adder.
Abstract:
A multi-bit (M-bit, M>1 ) Sigma-Delta digital-lo-analog converter (DAC) with a variable resolution multi-bit quantizer that has its digital value inputs that are truncated or rounded to a resolution that follows a random or pseudo-random sequence to provide automatic dynamic dithering for removing undesired idle tones in the analog output of the Sigma-Delta DAC. Random numbers N(n) between 1 and M are provided, and M-N(n) least significant bits in each M-bit digital value at the output of the quantizer are forced to zero with a digital trunealor or rounder. The random numbers N(n) may be provided by a random or pseudo-random sequence generator, e.g., Galois linear feedback shift register in combination with digital comparators and an adder.
Abstract:
Adaptive electrostatic discharge (ESD) protection of a device interface has very good ESD robustness when it is handled or when installed into or removed from a system. And has robust immunity to DPI, electromagnetic interference (EMI) and the like, when it is operational in a system. There is a significant capacitive coupling between the drain and gate of a ESD protection metal oxide semiconductor (MOS) device to enhance ESD protection and lower snap back voltage thereof whenever there is no (or a low level) DPI on the external connection to be protected. Whereupon when a significant DPI/EMI signal is detected on the external connection, the capacitive coupling between the drain and gate of the MOS ESD protection device is disconnected, bypassed or attenuated so that DPI/EMI immunity of the device is enhanced.