Abstract:
A TC controlled RF signal detecting circuitry (211) used in the output power control circuit of a TDMA RF signal power amplifier includes positive coefficient current source (303) producing current I+ having a positive TC, negative coefficient current source (305) producing current I- having a negative TC, and current mirror (301) for summing currents I+ and I- to produce substantially identical compensated mirror currents Im1 and Im2. Anti-clamping current mirror (309) mirrors current Im2 to produce compensated currents Ia1 and Ia2, which are applied to and bias a Schottky diode coupled in series to a resistor network in each leg of diode detector (311). Each leg of diode detector (311) has a positive TC, which is substantially offset by the negative TC of compensated currents Ia1 and Ia2. Schottky diode (431) in one leg of diode detector (311) half-wave rectifies RF feedback signal (212) to produce temperature and voltage compensated power level signal (229), which has a DC level proportional to the output power level of RF output signal (214). By using TC controlled RF signal detecting circuitry (211), power level signal (229) has a DC level which is stable to within 5 mV over temperature ranging from -55 DEG C. to +125 DEG C. and over power supply voltage ranging from 2.7 V to 4.75 V.
Abstract:
A TC controlled RF signal detecting circuitry (211) used in the output power control circuit of a TDMA RF signal power amplifier includes positive coefficient current source (303) producing current I+ having a positive TC, negative coefficient current source (305) producing current I- having a negative TC, and current mirror (301) for summing currents I+ and I- to produce substantially identical compensated mirror currents Im1 and Im2. Anti-clamping current mirror (309) mirrors current Im2 to produce compensated currents Ia1 and Ia2, which are applied to and bias a Schottky diode coupled in series to a resistor network in each leg of diode detector (311). Each leg of diode detector (311) has a positive TC, which is substantially offset by the negative TC of compensated currents Ia1 and Ia2. Schottky diode (431) in one leg of diode detector (311) half-wave rectifies RF feedback signal (212) to produce temperature and voltage compensated power level signal (229), which has a DC level proportional to the output power level of RF output signal (214). By using TC controlled RF signal detecting circuitry (211), power level signal (229) has a DC level which is stable to within 5 mV over temperature ranging from -55 DEG C. to +125 DEG C. and over power supply voltage ranging from 2.7 V to 4.75 V.
Abstract:
A TC controlled RF signal detecting circuitry (211) used in the output power control circuit of a TDMA RF signal power amplifier includes positive coefficient current source (303) producing current I+ having a positive TC, negative coefficient current source (305) producing current I- having a negative TC, and current mirror (301) for summing currents I+ and I- to produce substantially identical compensated mirror currents Im1 and Im2. Anti-clamping current mirror (309) mirrors current Im2 to produce compensated currents Ia1 and Ia2, which are applied to and bias a Schottky diode coupled in series to a resistor network in each leg of diode detector (311). Each leg of diode detector (311) has a positive TC, which is substantially offset by the negative TC of compensated currents Ia1 and Ia2. Schottky diode (431) in one leg of diode detector (311) half-wave rectifies RF feedback signal (212) to produce temperature and voltage compensated power level signal (229), which has a DC level proportional to the output power level of RF output signal (214). By using TC controlled RF signal detecting circuitry (211), power level signal (229) has a DC level which is stable to within 5 mV over temperature ranging from -55 DEG C. to +125 DEG C. and over power supply voltage ranging from 2.7 V to 4.75 V.
Abstract:
A TC controlled RF signal detecting circuitry (211) used in the output power control circuit of a TDMA RF signal power amplifier includes positive coefficient current source (303) producing current I+ having a positive TC, negative coefficient current source (305) producing current I- having a negative TC, and current mirror (301) for summing currents I+ and I- to produce substantially identical compensated mirror currents Im1 and Im2. Anti-clamping current mirror (309) mirrors current Im2 to produce compensated currents Ia1 and Ia2, which are applied to and bias a Schottky diode coupled in series to a resistor network in each leg of diode detector (311). Each leg of diode detector (311) has a positive TC, which is substantially offset by the negative TC of compensated currents Ia1 and Ia2. Schottky diode (431) in one leg of diode detector (311) half-wave rectifies RF feedback signal (212) to produce temperature and voltage compensated power level signal (229), which has a DC level proportional to the output power level of RF output signal (214). By using TC controlled RF signal detecting circuitry (211), power level signal (229) has a DC level which is stable to within 5 mV over temperature ranging from -55 DEG C. to +125 DEG C. and over power supply voltage ranging from 2.7 V to 4.75 V.
Abstract:
An active integrated termination circuit for providing a predetermined impedance at an output includes first and second resistors each having one end of which is commonly connected to the output. A first switching element is coupled between the other end of the first resistor and a first power supply conductor and is responsive to control signals for selectively coupling and de-coupling the first resistor to the first power supply conductor. A second switching element is coupled between the other end of the second resistor and a second power supply conductor and is responsive to the control signals for selectively coupling and de-coupling the second resistor to the second power supply conductor. The first and second resistors are polycrystalline silicon resistors and are trimmed to predetermined values by pulsing a high current unilaterally therethrough.
Abstract:
An amplifier (50) having an input and output stage for providing drive current to a load (RL) coupled thereto includes circuitry (42, 44, 46, 52) that senses when an input signal is applied to the amplifier and is responsive thereto for providing an enabling signal at an output thereof and current regulator circuitry (20, 22) that supplies a low drain current to bias the stages when the amplifier is in a quiescent operating mode absent an applied input signal and that is responsive to the enabling signal for increasing the current supplied to the stages to bias the same in a high bias drain current operating mode.
Abstract:
A TC controlled RF signal detecting circuitry (211) used in the output power control circuit of a TDMA RF signal power amplifier includes positive coefficient current source (303) producing current I+ having a positive TC, negative coefficient current source (305) producing current I- having a negative TC, and current mirror (301) for summing currents I+ and I- to produce substantially identical compensated mirror currents Im1 and Im2. Anti-clamping current mirror (309) mirrors current Im2 to produce compensated currents Ia1 and Ia2, which are applied to and bias a Schottky diode coupled in series to a resistor network in each leg of diode detector (311). Each leg of diode detector (311) has a positive TC, which is substantially offset by the negative TC of compensated currents Ia1 and Ia2. Schottky diode (431) in one leg of diode detector (311) half-wave rectifies RF feedback signal (212) to produce temperature and voltage compensated power level signal (229), which has a DC level proportional to the output power level of RF output signal (214). By using TC controlled RF signal detecting circuitry (211), power level signal (229) has a DC level which is stable to within 5 mV over temperature ranging from -55 DEG C. to +125 DEG C. and over power supply voltage ranging from 2.7 V to 4.75 V.