公开(公告)号：JP2005109494A

公开(公告)日：2005-04-21

申请号：JP2004281686

申请日：2004-09-28

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： PLAINE GLENN-YVES ,  ALBRECHT TONY ,  BRICK PETER ,  PHILIPPENS MARC

IPC: H01L31/12 ,  H01L27/15 ,  H01L31/173

CPC classification number: H01L27/15 ,  H01L31/173

Abstract: PROBLEM TO BE SOLVED: To make beam-generating and receiving elements spatially compact, and to perform mutual adjustments between the elements to be as proper as is possible. SOLUTION: The region to generate electromagnetic beams for the semiconductor component elements is configured, to have a different composition portion from that of the region for absorbing the electromagnetic beams. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：使波束产生和接收元件在空间上紧凑，并且使得元件之间的相互调节尽可能合适。 解决方案：用于产生用于半导体元件的电磁束的区域被配置为具有与用于吸收电磁束的区域不同的组成部分。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004072098A

公开(公告)日：2004-03-04

申请号：JP2003204627

申请日：2003-07-31

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semikonductors GmbH

Inventor： PLASS WERNER ,  JUNG CHRISTIAN ,  ALBRECHT TONY ,  STRELLER UDO

IPC: H01L21/00 ,  H01L33/00 ,  H01S5/02 ,  H01S5/183

CPC classification number: H01S5/18311 ,  H01S5/0201 ,  H01S5/3202

Abstract: PROBLEM TO BE SOLVED: To provide a surface emitting laser chip with improved aging characteristics or an extended life, in the surface emitting laser chip provided with a semiconductor base substrate comprising a crystal structure having a crystal main direction 7, a beam outgoing surface 4 and a side surface 5 forming the semiconductor base substrate 1 in a lateral direction.
SOLUTION: The semiconductor laser chip is arranged so that at least one side surface 5 is aslant to the crystal main direction 7.
COPYRIGHT: (C)2004,JPO

Abstract translation: 解决的问题：为了提供具有改善的老化特性或延长寿命的表面发射激光器芯片，在具有包括具有晶体主方向7的晶体结构的半导体基底基板的表面发射激光器芯片中， 表面4和在横向上形成半导体基底基板1的侧表面5。 解决方案：半导体激光芯片布置成使得至少一个侧表面5与晶体主方向7相对。版权所有（C）2004，JPO

公开(公告)号：JP2004111976A

公开(公告)日：2004-04-08

申请号：JP2003326589

申请日：2003-09-18

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semikonductors GmbH

Inventor： WOLFGANG SCHMIDT ,  ALBRECHT TONY

IPC: H01S5/026 ,  H01S5/04 ,  H01S5/14 ,  H01S5/183

CPC classification number: H01S5/18372 ,  H01S5/02461 ,  H01S5/026 ,  H01S5/041 ,  H01S5/141 ,  H01S5/4056

Abstract: PROBLEM TO BE SOLVED: To provide an optically pumped semiconductor laser device which can be manufactured as easily as technically possible. SOLUTION: This optically pumped semiconductor laser device is equipped with a vertical emission portion 2 and at least one pump laser 5 for optically pumping the vertical emission portion. In the monolithically integrated semiconductor laser device, the pump laser has a radiant emission region 6 at a first temperature T 1 while the vertical emission portion has a radiant emission region 3 at a second temperature T 2 , which is higher than the temperature T 1 , during operation. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004140375A

公开(公告)日：2004-05-13

申请号：JP2003359872

申请日：2003-10-20

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semikonductors GmbH

Inventor： ALBRECHT TONY

IPC: H01S5/042 ,  H01S3/091 ,  H01S3/092 ,  H01S3/0941 ,  H01S5/00 ,  H01S5/026 ,  H01S5/183 ,  H01S5/187 ,  H01S5/34 ,  H01S5/40

CPC classification number: H01S3/091 ,  H01S3/092 ,  H01S3/0941 ,  H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/183 ,  H01S5/187 ,  H01S5/34 ,  H01S5/40

Abstract: PROBLEM TO BE SOLVED: To manufacture a semiconductor laser at a relatively low cost.
SOLUTION: The semiconductor laser is manufactured at a relatively low cost. A first principal plane of a substrate is provided with a pumping laser and a laser which is optically pumped by the pumping laser and emits a radiation in the vertical direction. The first principal plane of the substrate is structured so as to have a first region at a relatively high position and a second region at a relatively low position. The pumping laser is provided on the first region at the relatively high position of the substrate and the laser for emitting a radiation in the vertical direction is provided on the second region at the relatively low position of the substrate via an intermediate layer. Regarding the first region at the relatively high position of the substrate and the thickness of the intermediate layer, a height difference is selected so that the pumping laser and the laser for emitting a radiation in the vertical direction are positioned at the same height.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003304033A

公开(公告)日：2003-10-24

申请号：JP2003091016

申请日：2003-03-28

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング

Inventor： SPAETH WERNER DR ,  LUFT JOHANN ,  LUTGEN STEPHAN ,  LINDER NORBERT ,  ALBRECHT TONY ,  STEEGMUELLER ULRICH

IPC: H01S5/026 ,  H01S5/04 ,  H01S5/062 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183

CPC classification number: H01S5/141 ,  H01S5/026 ,  H01S5/041 ,  H01S5/06226 ,  H01S5/1032 ,  H01S5/1071 ,  H01S5/18305 ,  H01S5/1835 ,  H01S5/4056

Abstract: PROBLEM TO BE SOLVED: To improve a semiconductor laser device to modulate an output power at a high speed.
SOLUTION: A surface emission semiconductor laser device is provided with a perpendicular emitter (20) that can be optically pumped, which is provided with at least one modulation beam source (30) to modulate an output power of the surface emission semiconductor laser device that is a type having a beam formation layer (14). The modulation beam source includes an edge radiation semiconductor structure (15) having an active layer forming a beam, and the modulation beam source is arranged to radiate a beam from the semiconductor laser device during operation. The generated beam is inputted in the active layer (14) for forming the beam of the perpendicular emitter (20) and is joined with it.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提高半导体激光装置以高速调制输出功​​率。 解决方案：表面发射半导体激光器件设置有可被光学泵浦的垂直发射器（20），其设有至少一个调制束源（30），以调制表面发射半导体激光器的输出功率 装置，其是具有光束形成层（14）的类型。 调制光束源包括具有形成光束的有源层的边缘辐射半导体结构（15），并且调制光束源被布置成在操作期间辐射来自半导体激光器件的光束。 所产生的光束被输入到有源层（14）中，用于形成垂直发射器（20）的光束并与之连接。 版权所有（C）2004，JPO

公开(公告)号：WO2014048798A3

公开(公告)日：2014-05-30

申请号：PCT/EP2013069274

申请日：2013-09-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  SCHLERETH THOMAS ,  SCHULZ ROLAND ,  GÄRTNER CHRISTIAN ,  BESTELE MICHAEL ,  MARFELD JAN ,  KIRSCH MARKUS ,  KAISER STEPHAN

IPC: F21V7/00 ,  F21K99/00 ,  F21V9/40 ,  F21V13/04 ,  F21Y101/02 ,  F21Y113/00

CPC classification number: F21V7/0008 ,  F21K9/62 ,  F21K9/64 ,  F21V7/048 ,  F21V13/04 ,  F21Y2103/33 ,  F21Y2113/13 ,  F21Y2115/10

Abstract: In at least one embodiment, the ring light module (1) comprises a plurality of first and a plurality of second light-emitting optoelectronic semiconductor components (2), each having a main emission direction (20), wherein the first semiconductor components have a spectral emission which is different than that of the second semiconductor components. The ring light module (1) contains a reflector (3), which has a curved reflective surface (30). The semiconductor components (2) are fitted on a mount (4). The semiconductor components (2) are, when viewed in a plan view of the reflective surface (30), arranged in the form of a ring around the reflective surface (30) along an arrangement line (42). In a centre (44), the reflector (3) has a maximum height, in relation to a base side (40) of the ring light module (1). The centre (44) is located in a geometric centre of an inner face surrounded by the arrangement line (42). When viewed in a plan view of the reflective surface (30), the main emission directions (20) each point towards the centre (44) with a tolerance of at most 15°.

Abstract translation: 在至少一个实施例中，环形光模块（1）包括多个第一和多个第二发光光电半导体部件（2）的每一个都具有一个主发光方向（20），其中所述第一半导体元件具有不同的第二半导体组件光谱发射。 环形光模块（1）包括：（3）具有弯曲的反射表面（30）的反射器。 上安装有半导体元件（2）的支撑件（4）。 半导体部件（2）是，在平面图中看到的在反射表面（30），沿着装配线（42）环形地围绕所述反射表面（42）布置成围绕。 在一个中心（44），反射器（3），以最大高度相对于所述环形发光模块的底侧（40）（1）。 中心（44）位于封闭的内部空间中的装配线（42）中的一个的几何中心。 在俯视观察到反射表面（30）朝向所述主发射方向（20），具有最大的每15°的向中心（44）有一个公差。

公开(公告)号：WO2012171817A3

公开(公告)日：2013-06-06

申请号：PCT/EP2012060393

申请日：2012-06-01

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  REUFER MARTIN ,  MAUTE MARKUS ,  ALBRECHT TONY

Inventor： REUFER MARTIN ,  MAUTE MARKUS ,  ALBRECHT TONY

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44

CPC classification number: H01L33/24 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor chips, which comprises at least the following method steps: providing at least one semiconductor body (1); introducing at least one trench (2) into the semiconductor body (1) by means of at least one structuring process (3), wherein the trench (2) breaks through the active zone (12) in a vertical direction (V); applying at least one cleaning process (4) at least to exposed points of the semiconductor body (1) in the area of the trench (2), wherein the cleaning process (4) comprises at least one plasma cleaning process (33), and the plasma cleaning process (44) reduces a number and/or a physical extent of structuring residues (333) at exposed points of the semiconductor body (1), at least in the area of the trench (2); and applying at least one passivation layer (5) at least to exposed points of the semiconductor body (1) in the area of the trench (2).

Abstract translation: 一种用于制造多个给定光电半导体芯片的方法，包括至少以下步骤： - 提供至少一个半导体本体（1）; - （2）通过在半导体本体的至少一个图案化工艺（3）的装置将至少一个沟槽（1），其中 - 所述槽（2）在垂直方向（V）突破了有源区（12）; - 至少在至少一个清洁过程（4）的应用在半导体本体的暴露的部分（1）在所述沟槽的区域（2），其中 - 所述清洁工艺（4）包括至少一个等离子清洁工艺（33），以及 - 所述等离子清洁工艺（44）包括一个数字和 /或在半导体本体（1）至少在所述沟槽的区域（2）被至少减少外露部分结构化残留物（333）的空间范围; - 在所述沟槽的区域上的半导体主体（1）的外露部分施加至少至少一个钝化层（5）（2）。

公开(公告)号：WO2007118440A3

公开(公告)日：2008-03-20

申请号：PCT/DE2007000473

申请日：2007-03-15

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  LUTGEN STEPHAN ,  BRICK PETER ,  ALBRECHT TONY

Inventor： LUTGEN STEPHAN ,  BRICK PETER ,  ALBRECHT TONY

IPC: H01S5/183 ,  H01S3/04 ,  H01S3/108 ,  H01S5/024 ,  H01S5/14

CPC classification number: H01S5/18388 ,  H01S3/108 ,  H01S3/109 ,  H01S5/026 ,  H01S5/041 ,  H01S5/141 ,  H01S5/227 ,  H01S5/4025 ,  H01S5/4031

Abstract: The invention relates to an optoelectronic semiconductor element which comprises a semiconductor base (1) having a surface-emitting vertical emitter zone (2) comprising a vertical emitter layer (3), at least one pump source (4) adapted to optically pump the vertical emitter layer (3), and a radiation exit surface (26) through which the electromagnetic radiation (31) produced in the vertical emitter layer exits the semiconductor base (1), the pump source (4) and the vertical emitter layer (3) being interspaced in the vertical direction.

Abstract translation: 它是一种光电子半导体器件，包括：半导体主体（1），包括：表面发射被设置用于光学泵浦所述垂直发射层（3）垂直发射极区域（2）包括：（a垂直发射层（3），至少一个泵源（4），和一个辐射通道面积 26）通过）（半导体本体1）在垂直发射层的电磁辐射（31所产生的热量叶指示，其中，所述泵浦源（4）和在垂直方向上的垂直发射层（3）间隔开。

公开(公告)号：WO0213334A3

公开(公告)日：2002-05-10

申请号：PCT/DE0102903

申请日：2001-07-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  ALBRECHT TONY

Inventor： ALBRECHT TONY

IPC: H01S5/042 ,  H01S5/183 ,  H01S5/20 ,  H01S5/22

CPC classification number: H01S5/18338 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/2059 ,  H01S2301/18

Abstract: The invention relates to a surface-emitting laser (VCSEL) having lateral current injection. According to the invention, the pumping current (4) is guided from the decoupling side contact surface (2) in a first area (12) outside of the resonator volume in a manner that is predominantly parallel to the resonator axis and is conducted in a second area (13) in a manner that is predominantly perpendicular to the active volume (9). The invention also relates to a contact geometry, which effects an automatic regulation of the size of the active volume (9) according to the pumping current (4).

Abstract translation: 本发明涉及一种表面发射激光器（VCSEL）与横向电流注入。 这里，泵电流（4）从auskoppelseitigen接触表面传送（2）从外部谐振器容积主要平行于所述谐振器中的第一区域（12）和在第二区域（13）主要是垂直于有源体积（9）。 此外，接触几何描述，这将导致有效体积（9）的大小的作为泵浦电流（4）的功能的独立调节。

公开(公告)号：WO2014048797A3

公开(公告)日：2014-05-30

申请号：PCT/EP2013069270

申请日：2013-09-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GÄRTNER CHRISTIAN ,  SCHLERETH THOMAS ,  SCHULZ ROLAND ,  SCHNEIDER ALBERT ,  KIRSCH MARKUS ,  ALBRECHT TONY ,  BESTELE MICHAEL ,  MARFELD JAN ,  KAISER STEPHAN

IPC: F21V7/00 ,  F21K99/00 ,  F21V9/40 ,  F21Y101/02

CPC classification number: F21V7/0008 ,  F21K9/64 ,  F21Y2103/33 ,  F21Y2115/10

Abstract: In at least one embodiment, the ring light module (1) comprises a plurality of light-emitting, optoelectronic semiconductor components (2), which each have a main emission direction (20). The ring light module (1) contains a reflector (3), which has a curved reflective surface (30). The semiconductor components (2) are fitted on a mount (4). The semiconductor components (2), when viewed in a plan view of the reflective surface (30), are arranged in the form of a ring around the reflective surface (30) along an arrangement line (42). In a centre (44), the reflector (3) has a maximum height, in relation to a base side (40) of the ring light module (1). The centre (44) is located in a geometrical centre of an inner face surrounded by the arrangement line (42). When viewed in a plan view of the reflective surface (30), the main emission directions (20) each point towards the centre (44) with a tolerance of at most 15°. The semiconductor components (2) are arranged densely along the arrangement line (42).

Abstract translation: 在至少一个实施例中，环形光模块（1）包括多个发光光电半导体部件（2）的每一个都具有主发射方向（20）。 环形光模块（1）包括：（3）具有弯曲的反射表面（30）的反射器。 上安装有半导体元件（2）的支撑件（4）。 半导体部件（2）是，在平面图中看到的在反射表面（30），沿着装配线（42）环形地围绕所述反射表面（42）布置成围绕。 在一个中心（44），反射器（3），以最大高度相对于所述环形发光模块的底侧（40）（1）。 中心（44）位于封闭的内部空间中的装配线（42）中的一个的几何中心。 在俯视观察到反射表面（30）朝向所述主发射方向（20），具有最大的每15°的向中心（44）有一个公差。 沿着装配线（42），所述半导体部件（2）高密度地配置。