公开(公告)号：IT1228900B

公开(公告)日：1991-07-09

申请号：IT1957089

申请日：1989-02-27

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PAPARO MARIO ,  PALARA SERGIO

IPC: H01L21/822 ,  H01L21/8222 ,  H01L27/04 ,  H01L27/06 ,  H03K5/02 ,  H01L

Abstract: The monolithic integrated structure comprises a semiconductor substrate (1), a superimposed first epitaxial stratum (2) having characteristics such as to withstand a high supply voltage applied to the driving system and a first and a second insulation pocket (3, 4) which may be connected to a high voltage and to ground, respectively, and diffused in said first epitaxial stratum (2) at a distance such as to define an interposed area (25) of said first stratum (2) capable of insulating said insulating pockets (3, 4) from one another. Within the latter pockets (3, 4), there are provided respective embedded strata (6, 7) and superimposed regions (8, 9) of a second epitaxial stratum having characterstics such as to withstand the low voltage applied across the two driving stages. A further region (5) of said second epitaxial stratum is superimposed over said area (25) of said first epitaxial stratum (2). The above regions (8, 9) of insulation pockets (3, 4) are designed for the formation of two high and low voltage driving stages (DR1, DR2), while the above further region (5) of the second epitaxial stratum may be used for the formation of a level translator circuit component (T3). Means (20, 21; 22, 23) are provided for the protection of said circuit component (T3) against high supply voltages.

公开(公告)号：IT1228028B

公开(公告)日：1991-05-27

申请号：IT2295288

申请日：1988-12-15

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PALARA SERGIO ,  MONACO PAOLO

IPC: H02P7/288 ,  H02M7/538 ,  H02P7/00 ,  H03K4/94 ,  H03K17/0812 ,  H03K17/16 ,  H03K17/687 ,  H01L

Abstract: The generator of drive signals comprises a ramp generator (11) suitable for receiving a square waveform input signal and for converting it into an output signal variable between a lower level and an upper level with upward and downward ramps having a preset slope, a first comparator (21) with a non-inverting input connected to the output of said ramp generator (11) and an inverting input connected to a first reference signal source (23) and a second comparator (22) with an inverting input connected to the output of said ramp generator (11) and a non-inverting input connected to a second reference signal source (24).

公开(公告)号：IT1226557B

公开(公告)日：1991-01-24

申请号：IT2156188

申请日：1988-07-29

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： ZISA MICHELE ,  PALARA SERGIO

IPC: H02H9/04 ,  H03K17/06 ,  H03K17/0814 ,  H03K17/567 ,  H03K17/687 ,  H03K17/695 ,  H03H

Abstract: The power device (2) has a power supply terminal (3), a load terminal (5) connected to earth by means of an inductive load (1) and a control terminal (6) connected to a circuit (7) with inlet (8) for an alternating control signal. Whenever the power device (2) is turned off, a switching element (10, 30) hitches the voltage of the control terminal (6) to that of the load terminal (5), which is forced to fall by the inductive load. There is provided a discharge circuit (2, 18, 19; 21, 22) of the inductive load (1), which includes means (18, 21) having a predetermined threshold which are fired when the voltage of the load terminal (5) falls down to said predetermined threshold.

公开(公告)号：IT8922289D0

公开(公告)日：1989-11-07

申请号：IT2228989

申请日：1989-11-07

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PAPARO MARIO ,  PALARA SERGIO

IPC: H01L21/822 ,  H01L29/74 ,  H01L27/02 ,  H01L27/04 ,  H01L

Abstract: The device accomplishes the protection against breakdown of an N+ type diffuse region (6) inserted in a vertical-type semiconductor integrated power structure. Such a structure comprises an N+ type substrate (1) over which there is superimposed an N- type epitaxlal layer (2) in which a grounded P type insulation pocket (3) is obtained. The insulation pocket (3) contains an N type region (4) including a P type region (5) for the containment of the N+ type diffuse region (6). The diffuse region (6) is insulated electrically with respect to the A type containment region (5).

公开(公告)号：IT8822924D0

公开(公告)日：1988-12-13

申请号：IT2292488

申请日：1988-12-13

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PALARA SERGIO

IPC: F02P11/02 ,  F02P3/04 ,  F02P3/055 ,  F02P17/12 ,  H02M9/00 ,  H03K17/08 ,  H03K17/082

Abstract: The diagnostic circuit comprises a comparator (11) having a first input (12) connected to the power device (5) and a second input (14) connected to a reference voltage generator (15). A signal generator (17) is connected to the output of comparator (11) so as to generate a diagnostic signal when comparator (11) detects a current in the power device which is higher than a preset value corresponding to said reference voltage. Means (16) sensitive to the temperature of the power device act on the reference voltage generator (15) so as to reduce the value of said reference voltage in response to an increase in the temperature beyond a preset limit.

公开(公告)号：DE69022262T2

公开(公告)日：1996-05-15

申请号：DE69022262

申请日：1990-02-12

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PAPARO MARIO ,  PALARA SERGIO

IPC: H01L21/822 ,  H01L21/8222 ,  H01L27/04 ,  H01L27/06 ,  H03K5/02 ,  H01L21/76 ,  H01L27/02

Abstract: The monolithic integrated structure comprises a semiconductor substrate (1), a superimposed first epitaxial stratum (2) having characteristics such as to withstand a high supply voltage applied to the driving system and a first and a second insulation pocket (3, 4) which may be connected to a high voltage and to ground, respectively, and diffused in said first epitaxial stratum (2) at a distance such as to define an interposed area (25) of said first stratum (2) capable of insulating said insulating pockets (3, 4) from one another. Within the latter pockets (3, 4), there are provided respective embedded strata (6, 7) and superimposed regions (8, 9) of a second epitaxial stratum having characterstics such as to withstand the low voltage applied across the two driving stages. A further region (5) of said second epitaxial stratum is superimposed over said area (25) of said first epitaxial stratum (2). The above regions (8, 9) of insulation pockets (3, 4) are designed for the formation of two high and low voltage driving stages (DR1, DR2), while the above further region (5) of the second epitaxial stratum may be used for the formation of a level translator circuit component (T3). Means (20, 21; 22, 23) are provided for the protection of said circuit component (T3) against high supply voltages.

公开(公告)号：DE68924107D1

公开(公告)日：1995-10-12

申请号：DE68924107

申请日：1989-06-08

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： ZISA MICHELE ,  PALARA SERGIO

IPC: H02H9/04 ,  H03K17/06 ,  H03K17/0814 ,  H03K17/567 ,  H03K17/687 ,  H03K17/695 ,  H03K17/08

Abstract: The power device (2) has a power supply terminal (3), a load terminal (5) connected to earth by means of an inductive load (1) and a control terminal (6) connected to a circuit (7) with inlet (8) for an alternating control signal. Whenever the power device (2) is turned off, a switching element (10, 30) hitches the voltage of the control terminal (6) to that of the load terminal (5), which is forced to fall by the inductive load. There is provided a discharge circuit (2, 18, 19; 21, 22) of the inductive load (1), which includes means (18, 21) having a predetermined threshold which are fired when the voltage of the load terminal (5) falls down to said predetermined threshold.

公开(公告)号：DE68917881T2

公开(公告)日：1995-04-27

申请号：DE68917881

申请日：1989-12-04

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PALARA SERGIO ,  MONACO PAOLO

IPC: H02P7/288 ,  H02M7/538 ,  H02P7/00 ,  H03K4/94 ,  H03K17/0812 ,  H03K17/16 ,  H03K17/687 ,  H03K17/08 ,  H02M1/08

Abstract: The generator of drive signals comprises a ramp generator (11) suitable for receiving a square waveform input signal and for converting it into an output signal variable between a lower level and an upper level with upward and downward ramps having a preset slope, a first comparator (21) with a non-inverting input connected to the output of said ramp generator (11) and an inverting input connected to a first reference signal source (23) and a second comparator (22) with an inverting input connected to the output of said ramp generator (11) and a non-inverting input connected to a second reference signal source (24).

公开(公告)号：DE68921004D1

公开(公告)日：1995-03-16

申请号：DE68921004

申请日：1989-11-17

Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

Inventor： ZISA MICHELE ,  SCILLA GIUSEPPE ,  PALARA SERGIO

IPC: H01L29/78 ,  H01L27/02 ,  H01L27/04 ,  H03K17/08 ,  H03K17/082 ,  H03K17/14

Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.

公开(公告)号：DE69012898D1

公开(公告)日：1994-11-03

申请号：DE69012898

申请日：1990-07-05

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PALARA SERGIO

IPC: G05F1/56 ,  H02H9/04

Abstract: To a power device (T1, T2; T11) with related control circuit (A1, T3), both of the semiconductor type in the form of an integrated circuit, there is associated a protection circuit which comprises a switch (T6) sensitive to negative overvoltages across the power supply and suitable for enabling a limiter (T4, Z1; T14) of the voltage applied across the power device (T1, T2; T11).