公开(公告)号：CA2519893C

公开(公告)日：2013-03-12

申请号：CA2519893

申请日：2004-03-22

Applicant: SILEX MICROSYSTEMS AB

Inventor： KAELVESTEN EDVARD ,  EBEFORS THORBJOERN ,  SVEDIN NIKLAS ,  RANGSTEN PELLE ,  SCHOENBERG TOMMY

IPC: H01L21/60 ,  B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L29/40

Abstract: The invention relates to a method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate. It comprising creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of said substrate, defined by said trench. It also relates to a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, comprising a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through said substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and comprises the same material as the substrate, i.e. it is made from the wafer material.

公开(公告)号：AU2003206552A1

公开(公告)日：2003-09-04

申请号：AU2003206552

申请日：2003-02-14

Applicant: SILEX MICROSYSTEMS AB

Inventor： SVEDIN NIKLAS ,  WESTIN HAKAN ,  KALVESTEN EDVARD ,  EBEFORS THORBJORN

IPC: B81B3/00 ,  B81B7/04 ,  G02F1/29 ,  H01L21/00 ,  H01L21/30 ,  H01L21/302 ,  H01L21/46 ,  H01L21/461

Abstract: A method of making a deflectable, free hanging micro structure having at least one hinge member, the method includes the steps of providing a first sacrificial wafer having a single crystalline material constituting material forming the micro structure. A second semiconductor wafer including necessary components for forming the structure in cooperation with the first wafer is provided. Finite areas of a structured bonding material is provided, on one or both of the wafers at selected locations, the finite areas defining points of connection for joining the wafers. The wafers are bonded using heat and optionally pressure. Sacrificial material is etched away from the sacrificial wafer, patterning the top wafer by lithography is performed to define the desired deflectable microstructures having hinges, and subsequently silicon etch to make the structures.

公开(公告)号：SE2351074A1

公开(公告)日：2025-03-15

申请号：SE2351074

申请日：2023-09-14

Applicant: SILEX MICROSYSTEMS AB

Inventor： SANDIN ANDREAS ,  HELD LUCAS ,  SVEDIN NIKLAS

IPC: H01L21/3065 ,  H01L21/768 ,  H01L23/48

Abstract: The present invention relates to a semiconductor device ( 100) that prevents sidewall profile damages during etch, preferably a deep reactive ion etching, of a through silicon via, TSV, ( 150) through a Si layer (110) of a stack in the semiconductor device (100). This is achieved by, in a via-last process, using a first conductive material (130, 130’, 130”) embedded in an insulating layer (120) of the stack as an etch stop. The even TSV sidewall profile thus obtained simplifies subsequent metallization of the TSV using physical vapor deposition, PVD. The present invention further includes a method of manufacturing such a semiconductor device (100). The improved, more reliable, metallization obtained using the inventive semiconductor device (100) leads to improved conductivity of the TSV (150), as well as a less costly and complex manufacturing process with improved yield.

公开(公告)号：SE537584C2

公开(公告)日：2015-06-30

申请号：SE1151201

申请日：2011-12-15

Applicant: SILEX MICROSYSTEMS AB

Inventor： SVEDIN NIKLAS ,  EBEFORS THORBJÖRN

IPC: B81C1/00

公开(公告)号：SE1151201A1

公开(公告)日：2013-06-16

申请号：SE1151201

申请日：2011-12-15

Applicant: SILEX MICROSYSTEMS AB

Inventor： SVEDIN NIKLAS ,  EBEFORS THORBJOERN

IPC: B81C1/00

公开(公告)号：SE1051391A1

公开(公告)日：2010-12-30

申请号：SE1051391

申请日：2008-12-23

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS

IPC: G02B26/08 ,  B81B7/00 ,  H01L23/522

公开(公告)号：SE0900590A1

公开(公告)日：2010-10-31

申请号：SE0900590

申请日：2009-04-30

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS TORBJOERN ,  KAELVESTEN EDWARD ,  SVEDIN NIKLAS ,  ERIKSSON ANDERS

IPC: B81B7/00 ,  H01L23/10

公开(公告)号：SE0802663A1

公开(公告)日：2010-06-24

申请号：SE0802663

申请日：2008-12-23

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  AAGREN PETER

IPC: H01L23/522 ,  B81B7/00 ,  B81C1/00 ,  G02B26/08 ,  H01L21/768

公开(公告)号：SE526366C3

公开(公告)日：2005-10-26

申请号：SE0300784

申请日：2003-03-21

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  HUHTAOJA TOMMY ,  RANGSTEN PELLE

IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48

公开(公告)号：CA2473836A1

公开(公告)日：2003-08-21

申请号：CA2473836

申请日：2003-02-14

Applicant: SILEX MICROSYSTEMS AB

Inventor： SVEDIN NIKLAS ,  EBEFORS THORBJOERN ,  WESTIN HAEKAN ,  KAELVESTEN EDVARD

IPC: B81B3/00 ,  B81B7/04 ,  G02F1/29 ,  H01L21/00 ,  H01L21/30 ,  H01L21/302 ,  H01L21/46 ,  H01L21/461

Abstract: The invention relates to a method of making a deflectable, free hanging micr o structure comprising at least one hinge member, the method comprising the steps of providing a first sacrificial wafer comprising a single crystalline material constituting material forming the micro structure. A second semiconductor wafer comprising necessary components for forming the structur e in cooperation with said first wafer is provided. Finite areas of a structur ed bonding material is provided, on one or both of said wafers at selected locations, said finite areas defining points of connection for joining said wafers. The wafers are bonded using heat and optionally pressure. Sacrificia l material is etched away from said sacrificial wafer, patterning the top wafe r by lithography is performed to define the desired deflectable microstructure s having hinges, and subsequently silicon etch to make the structures.