公开(公告)号：JPH11243253A

公开(公告)日：1999-09-07

申请号：JP4345698

申请日：1998-02-25

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI ,  MIYAJIMA TAKAO ,  TOMIOKA SATOSHI ,  AKIMOTO KATSUHIRO

IPC: C30B29/40 ,  H01L21/203 ,  H01L21/205 ,  H01L21/338 ,  H01L29/812 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To grow a good quality single-crystalline, nitride-based III-V semiconductor. SOLUTION: A layer of laminated substance is grown on a substrate by a molecular beam epitaxy process or the like, and then a nitride III-V compound semiconductor is grown on the laminated substance layer. As the substrate GaAs substrate 1 or an Si substrate is sued. Dangling bonds on the substrate are terminated beforehand preferably prior to the growth of the laminated substance layer. As the laminated substance a transition metal dichalcogenide such as MoS2 , graphite, mica, or the like is used. The nitride-based III-V compound semiconductor is used in the manufacture of semiconductor lasers, light- emitting diodes, field effect transistors(FET), etc.

公开(公告)号：JP2000164513A

公开(公告)日：2000-06-16

申请号：JP33640498

申请日：1998-11-26

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: C30B29/38 ,  H01L21/205 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To realize a method for growing a III-V nitride compound semiconductor having high crystallinity by increasing nitrogen materials contributing to growth. SOLUTION: A material gas, including ammonia gas being the material of nitrogen and carrier gas, is supplied inside of a reaction tube 3. The flow of the material gas inside the reaction tube 3 is set in a direction, parallel to the growth surface of a substrate 14, and the velocity of flow of the material gas inside the reaction tube 3 is set at 2 m/s or less. Thus, ammonia can be fully heated by the delay amount of the velocity of flow, and decomposing efficiency can be improved, and the supply of the nitrogen material to the growth surface of the substrate 14 can be increased, and the evaporation of nitrogen from the III-V nitride compound semiconductor during growth can be suppressed. Also, it is desirable that the inside the reaction tube 3 be pressurized.

公开(公告)号：JP2008135768A

公开(公告)日：2008-06-12

申请号：JP2007338846

申请日：2007-12-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： FUNATO KENJI ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI

IPC: H01L21/205 ,  C23C16/34 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L33/32 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a growing method of a nitride-based group III-V compound semiconductor layer capable of growing the nitride group III-V compound semiconductor layer on a substrate with good crystal quality. SOLUTION: When a GaN layer is grown on a substrate by a chemical vapor deposition method, and an AlGaN layer is grown on this GaN layer by the chemical vapor deposition method, the GaN layer is grown, with the molar ratio of a supply amount of a raw material N to the supply amount of a raw material of Ga set at ≥8,000, preferably ≥10,000, and more preferably ≥11,000. An Al 2 O 3 substrate, a ZnO substrate, and a SiC substrate are used as a substrate. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：提供能够在具有良好晶体质量的基板上生长氮化物III-V族化合物半导体层的基于氮化物的III-V族化合物半导体层的生长方法。 解决方案：通过化学气相沉积法在衬底上生长GaN层，并且通过化学气相沉积法在该GaN层上生长AlGaN层，生长GaN层，其摩尔比为 将原材料N的供给量设定为Ga≥8,000的原料的供给量，优选为≥10,000，更优选为≥11,000。 使用Al 2 SB 3 O 3，基板，ZnO基板和SiC基板作为基板。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008051963A

公开(公告)日：2008-03-06

申请号：JP2006226809

申请日：2006-08-23

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HASHIMOTO SHIGEKI ,  TANAKA HIROSHI ,  ONIKI KAZUNAO ,  TAGUCHI AYUMI

IPC: G03B21/00 ,  G02B26/10 ,  G02B26/12

Abstract: PROBLEM TO BE SOLVED: To reduce streaks on image generated by the fluctuations of manufacturing a one-dimensional type optical modulation device. SOLUTION: In the image projection apparatus, a main scanning optical part 108, which is scanned in a direction substantially vertical to the longitudinal direction of the one-dimensional type optical modulation device and a subscanning optical part 107, which is scanned in the longitudinal direction of the one-dimensional type optical modulation device are disposed on a scanning optical part 130. By vertically moving a one-dimensional image, for example, each frame, by means of the subscanning optical part 107, lateral streaks of the image can be suppressed or avoided. Also, optical face tangle errors of a polygon mirror can be corrected. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了减少由一维型光调制装置制造的波动产生的图像上的条纹。 解决方案：在图像投影装置中，扫描主扫描光学部件108，其沿与一维型光调制装置的纵向大致垂直的方向和副扫描光学部件107被扫描 一维型光调制装置的纵向方向设置在扫描光学部件130上。通过例如通过副扫描光学部件107垂直移动一维图像（例如每帧），图像的横向条纹 可以抑制或避免。 此外，可以校正多面镜的光学面部纠缠误差。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2000349397A

公开(公告)日：2000-12-15

申请号：JP15761699

申请日：1999-06-04

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  NAKAJIMA HIROSHI

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element using such a III-V nitride compound semiconductor that can reduce the threshold current density by hardly raising the operating voltage. SOLUTION: The p-type clad layer of a GaN semiconductor laser is constituted of two or more semiconductor layers having different band gaps and, in addition, the part of the p-type clad layer near the active layer-side interface of the layer is constituted of a semiconductor layer having a larger band gap than the other part has. To be concrete, in the GaN semiconductor laser having an AlGaN/GaN/GaInN SCH structure, the p-type AlGaN clad layer 10 is constituted of a p-type Alx1Ga1-x1N layer 10a which is in contact with a p-type GaN optical waveguide layer 9 and a p-type Alx2Ga1-x2N layer 10b (0

公开(公告)号：JPH10112438A

公开(公告)日：1998-04-28

申请号：JP26462696

申请日：1996-10-04

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a p-type nitride III-V compound semiconductor which has less crystal defects and good quality. SOLUTION: A MOCVD device 10 for implementing this method has a reaction tube 14 having inside thereof a suscepter 12 holding a substrate W, and a bubbler 20A housing TMG(trimethylgallium) and adapted for supplying a TMG gas to the reaction tube 14 through a supply line 18 by bubbling with a hydrogen gas. The substrate W is set in the reaction tube 14, and the temperature is raised to 1000 deg.C. Then, a hydrogen gas is supplied to the bubbler 20A, thereby introducing the TMG gas into the reaction tube 14. A GaN:C crystal to which a carbon atom as a p-type dopant is introduced is epitaxially grown on the substrate W. As a result, a GaN:C crystal of good quality having less crystal defects is provided.

公开(公告)号：JP2007316206A

公开(公告)日：2007-12-06

申请号：JP2006143882

申请日：2006-05-24

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HASHIMOTO SHIGEKI

IPC: G02F1/355 ,  H01S3/113

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor saturable absorber mirror which has polarization axis dependence of a beam absorbing characteristic and provides a stable polarizing characteristic, and also to provide a laser beam generator using the semiconductor saturable absorber mirror.
SOLUTION: The semiconductor saturable absorber mirror is produced by allowing a reflection mirror layer 12 made of DBR to grow on an inclined substrate 11 and also by allowing a semiconductor quantum well layer 13 on the mirror layer to grow as a saturable absorbing layer including a strained quantum well. An asymmetric strain is produced in the surface of the strained quantum well of the semiconductor quantum well layer 13. A GaAs substrate, an InP substrate, a GaN substrate, an Al
2 O
3 substrate, or the like is used as the inclined substrate 11. The semiconductor saturable absorber mirror is used for a resonator mirror of the laser beam generator.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有光束吸收特性的偏振轴依赖性并提供稳定的偏振特性的半导体可饱和吸收镜，并且还提供使用半导体可饱和吸收镜的激光束发生器。 解决方案：通过允许由DBR制成的反射镜层12在倾斜衬底11上生长并且还允许镜层上的半导体量子阱层13生长为可饱和吸收层来生产半导体可饱和吸收反射镜 包括应变量子阱。 在半导体量子阱层13的应变量子阱的表面产生不对称应变。GaAs衬底，InP衬底，GaN衬底，Al 2 O 3 / SB>衬底等用作倾斜衬底11.半导体可饱和吸收镜用于激光束发生器的谐振镜。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007310174A

公开(公告)日：2007-11-29

申请号：JP2006139460

申请日：2006-05-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TANAKA HIROSHI ,  HASHIMOTO SHIGEKI ,  ONIKI KAZUNAO

IPC: G03B21/00 ,  G02B26/08 ,  G09G3/02 ,  G09G3/20 ,  H04N5/74

Abstract: PROBLEM TO BE SOLVED: To reduce the stripe of an image caused by variation in manufacturing a diffraction grating type optical modulator.
SOLUTION: An image projection device is equipped with: a light source 100; a diffraction grating type optical modulator 102; and a projection optical system 110, and is provided with a driving part 103 moving the optical modulator 102 in the grating array direction (arrow m) of the diffraction grating of the optical modulator 102, and provided with a signal processing part 200 compensating an image signal input in the optical modulator 102 according to the moving direction of the optical modulator 102. By moving the optical modulator 102 by one to several pixels in every non-display period of one frame, a horizontal stripe caused by the variation in manufacturing is prevented and image quality is improved.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了减少由衍射光栅型光学调制器的制造中的变化引起的图像条纹。 解决方案：图像投影装置配备有：光源100; 衍射光栅型光调制器102; 和投影光学系统110，并且设置有驱动部1​​03，驱动部103使光调制器102沿着光调制器102的衍射光栅的光栅排列方向（箭头m）移动，并具有补偿图像的信号处理部200 根据光调制器102的移动方向在光调制器102中输入信号。通过在一帧的每个非显示周期内将光调制器102移动一到几个像素，防止由制造变化引起的水平条纹 并提高图像质量。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006343414A

公开(公告)日：2006-12-21

申请号：JP2005167019

申请日：2005-06-07

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI

IPC: G02B27/09 ,  G03B21/00

Abstract: PROBLEM TO BE SOLVED: To enhance uniformity concerning the light intensity distribution of an illumination optical system and also to restrain the lowering of efficiency caused by interference so as to control the lowering of luminance to the minimum. SOLUTION: In the prism element 1 used for uniformizing the light intensity distribution, a second surface 2_2 being a polarized light branching surface is arranged between a first surface 2_1 and a third surface 2_3 being reflection surfaces. The first and the third surfaces are arranged in parallel or nearly in parallel with each other, and incident light is emitted passing through an optical path where it is branched by the second surface 2_2 after it is reflected by the first surface 2_1 and an optical path where it is directly branched by the second surface 2_2. The luminous fluxes divided into four in the prism element 1 are composed, thereby obtaining averaged light quantity distribution. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2006229241A

公开(公告)日：2006-08-31

申请号：JP2006063811

申请日：2006-03-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KAWAI HIROHARU ,  IKEDA MASAO ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI

IPC: H01L33/32 ,  C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To prevent deterioration of a nitride-based group III-V compound semiconductor layer, containing In and to improve the quality of the nitride-based group III-V compound semiconductor layer that does not contain In, when the nitride-based group III-V compound semiconductor layer that does not contain In is grown on the nitride-based group III-V compound semiconductor layer containing In, such as GaInN layer at a higher growth temperature than that of the latter layer. SOLUTION: A protective film composed of AlGaN is grown on the nitride-based group III-V compound semiconductor layer, containing In at a growth temperature almost equal to or lower than that of the semiconductor layer thereof, and the nitride-based III-V compound semiconductor layer that does not contain In is grown thereon. Here, N 2 is used as the carrier gas, when the nitride-based group III-V compound semiconductor layer containing In and the protecting film are grown, and a mixed gas of H 2 and N 2 is used for the carrier gas, when the nitride-based group III-V compound semiconductor layer that does not contain In is grown. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题为了防止含有In的氮化物基III-V族化合物半导体层的劣化，并且为了提高不含In的氮化物系III-V族化合物半导体层的质量，当 不含In的基于氮化物的III-V族化合物半导体层生长在含In的氮化物基III-V族化合物半导体层上，例如GaInN层，其生长温度高于后一层。 解决方案：在氮化物基III-V族化合物半导体层上生长由AlGaN组成的保护膜，其中In生长温度几乎等于或低于其半导体层的生长温度，并且氮化物基 在其上生长不含In的III-V族化合物半导体层。 这里，使用N 2 作为载气，当含有In和保护膜的氮化物基III-V族化合物半导体层生长时，H 2 < 当不含有In的氮化物基III-V族化合物半导体层生长时，使用SB / N和SBB和N 作为载气。 版权所有（C）2006，JPO＆NCIPI