公开(公告)号：CA1045235A

公开(公告)日：1978-12-26

申请号：CA236812

申请日：1975-10-01

Applicant: SONY CORP

Inventor： MAMINE TAKAYOSHI ,  MATSUSHITA TAKESHI

IPC: H01L31/04 ,  G02B1/11 ,  G02B1/113 ,  H01L21/314 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/10 ,  H01L27/14

Abstract: A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment.

公开(公告)号：CA985794A

公开(公告)日：1976-03-16

申请号：CA169182

申请日：1973-04-19

Applicant: SONY CORP

Inventor： MATSUSHITA TAKESHI ,  HAYASHI HISAO

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/00 ,  H01L29/06 ,  H01L29/861

公开(公告)号：CA982700A

公开(公告)日：1976-01-27

申请号：CA169178

申请日：1973-04-19

Applicant: SONY CORP

Inventor： MATSUSHITA TAKESHI

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/06 ,  H01L29/74 ,  H01L29/744

公开(公告)号：ID21598A

公开(公告)日：1999-07-01

申请号：ID981691

申请日：1998-12-24

Applicant: SONY CORP

Inventor： MATSUSHITA TAKESHI ,  KUSUNOKI MISAO ,  TATSUMI TAKAAKI

IPC: H01L21/316 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L27/12 ,  H01L31/18 ,  H01L27/00

Abstract: A semiconductor substrate, a thin film semiconductor device, a manufacturing method thereof and an anodizing apparatus which can reduce the manufacturing cost and save the resources are provided. According to this invention, a semiconductor thin film is formed through a separation layer of a porous semiconductor on a substrate body of sapphire; the semiconductor thin film is separated from the porosity layer and used for a thin film semiconductor device; and the substrate body from which the semiconductor thin film is separated is used again after the separation layer attached thereto is removed by etching. Since sapphire has high strength, high rigidity, high resistance to wearing, high heat resistance, high abrasion resistance and high chemicals resistance, no deterioration and no damage occur even when the substrate body is repetitively used. Thus, the recycle frequency can be increased, and the reduction of the manufacturing cost and the saving of the resources can be promoted.

公开(公告)号：DE69111929T2

公开(公告)日：1996-03-28

申请号：DE69111929

申请日：1991-06-28

Applicant: SONY CORP

Inventor： MIYAZAWA YOSHIHIRO ,  MINAMI ERIC ,  MATSUSHITA TAKESHI

IPC: H01L21/336 ,  H01L29/786 ,  H01L29/772

Abstract: The semiconductor device (34) comprising a semiconductor layer (23) forming a source region (25), a drain region (26), a channel region (27) and a lead-out region (28) is arranged on a thin semiconductor film insulator (22). For increasing the breakdown voltage between source and drain, which is smaller than in a device formed in a bulk silicon, due to holes generated by an impact ionization, the lead-out region (28) adjoined to the source region (25) and/or a further lead-out region adjacent to the drain region (26) are provided so as to reach the bottom of the insulator film (22). Excess holes primarily causes by said impact ionization are pulled off and removed very effectively via said lead-out region(s) thus increasing the breakdown voltage.

公开(公告)号：CA1315421C

公开(公告)日：1993-03-30

申请号：CA575400

申请日：1988-08-23

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  NEGISHI MICHIO ,  NOGUCHI TAKASHI ,  OHSHIMA TAKEFUMI ,  HAYASHI YUJI ,  MAEKAWA TOSHIKAZU ,  MATSUSHITA TAKESHI

IPC: H01L29/78 ,  H01L29/786

Abstract: A thin film MOS transistor has a construction which can minimize scattering of electrons and thus maximize electron mobility for allowing higher speed operation of the transistor. Toward this, the MOS transistor has a thin film form semiconductor layer having a thickness in a range less than or equal to 100 nm, between a pair of gate electrodes which oppose to each other across the semiconductor layer.

公开(公告)号：DE2911711A1

公开(公告)日：1979-10-04

申请号：DE2911711

申请日：1979-03-24

Applicant: SONY CORP

Inventor： NAGAI TAMIJI ,  MATSUSHITA TAKESHI

IPC: H03K3/352 ,  H01L27/082 ,  H03K3/53 ,  H03K3/57 ,  H03K4/62 ,  H03K4/83 ,  H03K17/60 ,  H03K17/723 ,  H03K17/732 ,  H04N3/16 ,  H01L23/56 ,  H01L27/04 ,  H01L29/74 ,  H03K17/72

Abstract: First and second gate-controlled switches are connected analogously to a Darlington transistor pair with a slow-response diode connected to delay application of a turn-off signal to the second gate-controlled switch until the first gate-controlled switch is fully turned OFF. The Darlington-type connection reduces a drive current required from a driving source to maintain the second gate-controlled switch fully ON for passing a load current therethrough.

公开(公告)号：AU8570175A

公开(公告)日：1977-04-21

申请号：AU8570175

申请日：1975-10-14

Applicant: SONY CORP

Inventor： MATSUSHITA TAKESHI ,  MAMINE TAKAYOSHI

IPC: H01L31/04 ,  H01L31/06 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/10 ,  H01L21/36 ,  H01L21/38

Abstract: A semiconductor photovoltaic device is comprised of 2n layers of alternating p-type and n-type material having respective PN junctions between adjacent layers, wherein n is an integer greater than 1. Each layer has a thickness which is less than the diffusion length of a minority carrier therein. The PN junctions are excited by light which is incident on the device to thereby cause majority carriers to be accumulated in the respective layers so as to forward bias all of the PN junctions. As a result of this forward biasing, minority carriers are injected across a first PN junction fr0m one layer into an adjacent layer and then traverse the next PN junction into the next succeeding layer. The photovoltaic device thus is adapted to supply a voltage and a current to a load.

公开(公告)号：CA999683A

公开(公告)日：1976-11-09

申请号：CA200337

申请日：1974-05-17

Applicant: SONY CORP

Inventor： MATSUSHITA TAKESHI ,  HAYASHI HISAO ,  KAWANA YOSHIYUKI

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/00 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861

Abstract: A semiconductor device is provided having at least two semiconductor regions of opposite conductivity type and forming a planar-type PN junction. A field limiting ring is disposed spaced from the PN junction. A high-resistivity polycrystalline silicon layer covers the PN junction and the field limiting ring.

公开(公告)号：DE2605830A1

公开(公告)日：1976-09-02

申请号：DE2605830

申请日：1976-02-13

Applicant: SONY CORP

Inventor： MOCHIZUKI HIDENOBU ,  AOKI TERUAKI ,  MATSUSHITA TAKESHI ,  HAYASHI HISAO ,  OKAYAMA MASANORI

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/22 ,  H01L21/314 ,  H01L21/331 ,  H01L23/29 ,  H01L29/00

Abstract: A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.