公开(公告)号：JPH11346034A

公开(公告)日：1999-12-14

申请号：JP14153399

申请日：1999-05-21

Applicant: SONY CORP

Inventor： OZAWA MASABUMI ,  MARUTANI YUKITOSHI

IPC: H01S5/00 ,  H01S5/30 ,  H01S5/32 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To contrive avoidance of an inactivation of an acceptor due to the H group of an arsine AsH3 raw material in the method of manufacturing a compound semiconductor laser. SOLUTION: When a compound semiconductor layer 18 containing As is formed on a p-type compound semiconductor layer 17, the layer 18 containing the As is formed by the feed of an organic arsenic raw material. Thereby, when the later 18 containing the As is formed on the layer 17, avoidance of an inactivation of an acceptor due to the H group of an arsine AsH3 raw material, which is hitherto used, can be contrived and in the case where the method of manufacturing the layer 18 is adapted to the manufacture of a semiconductor laser, a reduction in the resistance between a p-type cap layer and an active layer, the enhancement of the controllability of p-type carriers and the enhancement of the characteristics of the laser can be contrived.

公开(公告)号：JPH08148761A

公开(公告)日：1996-06-07

申请号：JP28670994

申请日：1994-11-21

Applicant: SONY CORP

Inventor： NAGAI MASAHARU ,  MATSUMOTO OSAMU ,  ITO SATORU ,  OZAWA MASABUMI ,  OHATA TOYOJI ,  ISHIBASHI AKIRA ,  OKUYAMA HIROYUKI ,  HIEI FUTOSHI ,  KINOSHITA YUKO

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE: To provide a semiconductor light emitting device utilizing a II-VI group compound semiconductor which assures long term stabilized operation with the continuous oscillation under the room temperature. CONSTITUTION: In a semiconductor light emitting device where the principal part 3 of a semiconductor light emitting device using a II-VI group compound semiconductor is formed on a GaAs substrate 1 through lattice matching with this GaAs substrate 1, the principal part 3 of the semiconductor light emitting device is formed on the GaAs substrate 1 through an interface layer sequentially forming at least GaAs buffer layer 11 and ZnSe layer 12 and at least a partial thickness of the ZnSe layer 12 in the side of the GaAs buffer layer is formed as the non-doped ZnSe layer 12a.

公开(公告)号：JPH0870157A

公开(公告)日：1996-03-12

申请号：JP22874594

申请日：1994-08-30

Applicant: SONY CORP

Inventor： OZAWA MASABUMI ,  ISHIBASHI AKIRA

IPC: H01S5/00 ,  H01S3/18

Abstract: PURPOSE: To achieve a semiconductor laser using II-VI compound semiconductor realizing a high-frequency modulation without any oscillation delay. CONSTITUTION: In a semiconductor laser using II-VI compound semiconductor as the materials of clad layers 3 and 7 and an activated layer 5, an effective refractive index difference in the oscillation wavelength between the center of a current-injection part in a direction which is parallel to the activated layer 5 and a current non-injection part is provided to be at least 1×10 . Setting the gain at the oscillation wavelength immediately after injecting current to gm (0) and the total loss in a laser resonator to αtotal , current is injected under the conditions where gm (0)>=αtotal is established.

公开(公告)号：JPH07263814A

公开(公告)日：1995-10-13

申请号：JP7256894

申请日：1994-03-16

Applicant: SONY CORP

Inventor： OZAWA MASABUMI ,  NAKAYAMA NORIKAZU ,  HINO TOMOKIMI

IPC: H01L29/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H01S5/00 ,  H01S5/223 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE:To prevent the lowering of adhesion strength of a coated insulating material by depositing the insulating material on the surface of the surface of a semiconductor substrate in which irregularities constituting a predetermined roughness are formed. CONSTITUTION:At a first step, a semiconductor substrate 1 on which an insulating material is to be deposited on is prepared. The semiconductor substrate 1 is a III-V or II-VI compound semiconductor. Next, at a second step, the predetermined irregularities 1a are formed in the surface of the semiconductor substrate 1 to increase the surface area. Next, at a third step, an insulating material 2 is deposited on the surface of the semiconductor substrate 1 in which irregularities are formed. The insulating material 2 is SiO2, SiNx, Al2O3, TiO2, MgF2 or the like. Since the surface area of the semiconductor substrate 1 with the insulating material 2 is increased by the irregularities 1a, the adhesion strength of the insulating material deposited is increased.

公开(公告)号：JPH06188524A

公开(公告)日：1994-07-08

申请号：JP3274193

申请日：1993-01-28

Applicant: SONY CORP

Inventor： OZAWA MASABUMI ,  ITO SATORU ,  NARUI FUMIYO

IPC: H01L21/28 ,  H01L21/443 ,  H01L31/0224 ,  H01L33/04 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE:To realize an ohmic electrode exhibiting high adhesion and low specific contact resistance to II-VI compound semiconductor. CONSTITUTION:An ohmic electrode composed of a metallic multilayer film having a Pd film at the lowermost layer is formed on a p-type ZnTe layer 2 by vacuum deposition. After formation of an ohmic electrode, annealing is effected, as required, at 100-300 deg.C. The ohmic electrode thus formed is employed as a p-side ohmic electrode for a semiconductor laser or a light emission diode employing a II-VI compound semiconductor.

公开(公告)号：JP2009140551A

公开(公告)日：2009-06-25

申请号：JP2007314736

申请日：2007-12-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KOBAYASHI TAKASHI ,  SEO KATSUHIRO ,  OKAMOTO YOSHIKI ,  OZAWA MASABUMI

IPC: G11B7/09 ,  G11B7/135

Abstract: PROBLEM TO BE SOLVED: To achieve stable servo control of an optical pickup with a relatively simple configuration. SOLUTION: A diffraction grating disposed before a photo detector 47 has dual partitioning in the tangential direction of an optical disk, and the partitioned diffraction regions A and B have diffraction efficiencies respectively inclined in the radial direction of the optical disk while the directions of the inclinations of the diffraction efficiencies of the diffraction regions A and B are opposite. Specifically, the diffraction region A has the higher diffraction efficiency on the left hand side than on the right hand side in the drawing. In contrast, the diffraction region B has the diffraction efficiency higher on the right hand side than on the left hand side in the drawing. This technology can be applied to an optical disk drive. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：以相对简单的结构实现光拾取器的稳定伺服控制。 解决方案：设置在光电检测器47之前的衍射光栅在光盘的切线方向上具有双重划分，并且分割的衍射区域A和B具有分别沿着光盘的径向方向倾斜的衍射效率，而方向 的衍射区域A和B的衍射效率的倾斜相反。 具体而言，衍射区域A的左侧的衍射效率比图中右侧的衍射效率高。 相反，衍射区域B的衍射效率比图中左侧的衍射效率高于左侧。 该技术可以应用于光盘驱动器。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008182143A

公开(公告)日：2008-08-07

申请号：JP2007015963

申请日：2007-01-26

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YAMAUCHI KIYOSHI ,  OZAWA MASABUMI ,  KOBAYASHI TAKASHI

IPC: H01S5/022 ,  G11B7/125 ,  G11B7/22

Abstract: PROBLEM TO BE SOLVED: To obtain a spot shape in which a radial/tangential direction is equal on an irradiated field of a beam light even if a spot-shaped beam light whose aspect ratio differs is emitted. SOLUTION: A semiconductor device is used for a laser light-emitting device which irradiates the laser beam to the irradiated field. The semiconductor device includes: a light-emitting element 11 which emits the spot-shaped beam light whose aspect ratio differs; and an element loading side 12a on which the light-emitting element 11 is attached while being inclined to a reference plane by using an optical axis of the beam light as a center of rotation. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：即使发射长宽比不同的点状光束，也可以获得射束的照射场上的径向/切线方向相等的光斑形状。 解决方案：半导体器件用于将激光束照射到照射场的激光发光器件。 半导体器件包括：发光元件11，其发射纵横比不同的点状光束; 以及通过使用光束光的光轴作为旋转中心而倾斜于基准面的元件装载侧12a，其上安装有发光元件11。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JPH1022586A

公开(公告)日：1998-01-23

申请号：JP18856996

申请日：1996-06-28

Applicant: SONY CORP

Inventor： OZAWA MASABUMI ,  NAKAMURA FUMIHIKO ,  KAWAI HIROHARU

IPC: H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device using a low-threshold current density and long-life nitride III-V compound semiconductor. SOLUTION: A GaN semiconductor laser is constructed by sequentially depositing an n-type GaN layer 2, an n-type InGaN light absorbing layer 3, an n-type AlGaN clad layer 4, an n-type GaN light waveguide layer 5, an active layer 6 of InGaN, a p-type GaN light waveguide layer 7, a p-type AlGaN clad layer 8, a p-type InGaN light absorbing layer 9 and a p-type GaN layer 10, on a c-surface sapphire substrate 1. The compositional ratio of In of the n-type InGaN light absorbing layer 3 and the p-type InGaN light absorbing layer 9 is higher than that of the active layer 6 of InGaN, such that these n-type InGaN light absorbing layer 3 and the p-type InGaN light absorbing layer 9 absorb light of an emission wavelength.

公开(公告)号：JPH09246655A

公开(公告)日：1997-09-19

申请号：JP4504896

申请日：1996-03-01

Applicant: SONY CORP

Inventor： TAMAMURA KOJI ,  OZAWA MASABUMI

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve the emission characteristic and prolong the life by avoiding deterioration of the crystallinity of the interface between semiconductor layers due to insertion of a step of forming opening through a current restriction layer. SOLUTION: This device comprises a first-conductivity-type clad layer 5, active layer 7, second-conductivity-type clad layer 9 and current restriction layers 10 disposed on both sides of a current passage, each made of a compd. semiconductor. The layers 10 are a base compd. semiconductor film layer 11 and upper compd. semiconductor layer 12 formed on the layer 11 having a different compsn. from the layer 12 forming a main current constriction layer.

公开(公告)号：JPH09167879A

公开(公告)日：1997-06-24

申请号：JP34724095

申请日：1995-12-14

Applicant: SONY CORP

Inventor： TOJO TAKESHI ,  OZAWA MASABUMI ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device of II-VI group compound semiconductor which has a long service life and high reliability. SOLUTION: A stripe-like P-type GaAs current constriction region 2 is formed on a P-type GaAs substrate 1, and an N-type GaAs layer 3 is provided onto both the sides of the current constriction region 2 so as to sandwich the region 2 for the formation of a current constriction structure. The surfaces of the P-type GaAs current constriction region 2 and the N-type GaAs layer 3 are set nearly flat and flush with each other. A P-type ZnSe buffer layer 7, a P-type ZnSSe buffer layer 8, a P-type ZnMgSSe clad layer 9, a P-type ZnSSe optical waveguide layer 10, a ZnCdSe active layer 11, an N-type ZnSSe optical waveguide layer 12, an N-type ZnMgSSe clad layer 13, an N-type ZnSSe layer 14, and an N-type ZnSe contact layer 15 are successively laminated on the the P-type GaAs current constriction region 2 and the N-type GaAs layer 3 through the intermediary of a P-type GaAs layer 4, a P-type GaInP layer 5, and a P-type AlInP layer 6 for the formation of a laser structure.