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    REALISATION D'UN CONDENSATEUR INTEGRE
    15.
    发明专利
    REALISATION D'UN CONDENSATEUR INTEGRE 未知

    公开(公告)号：FR2879344A1

    公开(公告)日：2006-06-16

    申请号：FR0413199

    申请日：2004-12-10

    Applicant: ST MICROELECTRONICS SA

    Inventor： BOUCHE GUILLAUME ,  GIRAUDIN JEAN CHRISTOPHE

    IPC: H01L21/02 ,  H01L21/28 ,  H01L27/06

    Abstract: Un procédé de réalisation d'un condensateur intégré à un circuit électronique comprend la formation d'une tranchée (T) dans un substrat (100), au travers d'une portion conductrice (1) similaire à une grille de transistor MOS. Des couches alternativement conductrice (5), isolante (6) et conductrice (7) sont déposées à l'intérieur de la tranchée (T), pour former une armature inférieure, un diélectrique et une armature supérieure du condensateur. La portion conductrice (1) permet de connecter électriquement l'armature inférieure à d'autres composants électroniques du circuit, sans surcoût par rapport à la connexion de transistors du circuit.

    17.
    发明专利
    未知

    公开(公告)号：FR2854726A1

    公开(公告)日：2004-11-12

    申请号：FR0305649

    申请日：2003-05-09

    Applicant: ST MICROELECTRONICS SA

    Inventor： BOUCHE GUILLAUME ,  SAIAS DANIEL

    IPC: H01H59/00 ,  H01H61/02 ,  H01H13/22

    Abstract: A multiposition microswitch that includes a cavity, a mobile portion made of a deformable material extending above the cavity, at least three conductive tracks extending on the cavity bottom, and a contact pad on the lower surface of the mobile part. The mobile part is capable of deforming, under the action of a stressing mechanism, from an idle position where the contact pad is distant from the conductive tracks to an on position from among several distinct on positions. The contact pad electrically connects, in each distinct on position, at least two of the at least three conductive tracks, at least one of the conductive tracks connected to the contact pad in each distinct on position being different from the conductive tracks connected to the contact pad in the other distinct on positions.

    18.
    发明专利
    未知

    公开(公告)号：DE602005000385D1

    公开(公告)日：2007-02-15

    申请号：DE602005000385

    申请日：2005-01-25

    Applicant: ST MICROELECTRONICS SA

    Inventor： BOUCHE GUILLAUME

    IPC: H01H1/00 ,  B81B3/00 ,  H01H5/18 ,  H01H50/00 ,  H01H57/00 ,  H01H59/00

    Abstract: The system has a beam (111) and resistive units (121, 122, 132) to assure switching of a beam (110) between open and closed positions. An electrical continuity is established between two disjointed conductors (141, 142) in the closed position through contact between contact arms (151, 152) and the continuity is broken by spacing the arms in the open position. The open and closed positions correspond to buckling positions of beams.

    Connection pad for an integrated circuit, comprises a reinforcement structure connected by feedthroughs to upper metallization
    20.
    发明专利
    Connection pad for an integrated circuit, comprises a reinforcement structure connected by feedthroughs to upper metallization 未知

    公开(公告)号：FR2824954A1

    公开(公告)日：2002-11-22

    申请号：FR0106591

    申请日：2001-05-18

    Applicant: ST MICROELECTRONICS SA

    Inventor： VARROT MICHEL ,  BOUCHE GUILLAUME ,  GONELLA ROBERTO ,  SABOURET ERIC

    IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L23/48 ,  H01L21/71

    Abstract: The connection pad (PLC) comprises a continuous metallic layer (CMS) at the level of upper metallization having a zone for soldering a connection wire, a reinforcement structure (STR) below the soldering zone comprising at least one discontinuous metallic layer (CMD4) at the level of immediately lower metallization connected by feedthroughs (VS) to the upper metallic layer, and an insulator coating (OX) encapsulating the discontinuous metallic layer and filling the intervening spaces between the metallic layers. The connection pad also comprises several peripheral metallic rings (CRP1-CRP4) at different metallization levels, where the highest-level metallic ring (CRP4) surrounds the discontinuous metallic layer (CMD4) at the same level of metallization, and peripheral metallic feedthroughs connect a peripheral zone (ZP) of the upper metallic layer to the metallic ring, and each metallic ring to that immediately adjacent. The discontinuous metallic layer is in the form of regularly distributed elementary patterns, and the general orientations of two adjacent patterns are different, for example orthogonal. Each pattern is formed of several metallic bands laid out in parallel, and each metallic band supports several feedthroughs. In the second embodiment, the reinforcement structure (STR) comprises several discontinuous metallic layers extending at different metallization levels and mutually connected by feedthroughs. Two superimposed patterns corresponding to two adjacent discontinuous metallic layers are mutually shifted or are of generally different orientations, for example orthogonal. The metallic layers are of aluminium, and the feedthroughs are of tungsten; or the metallic layers and the feedthroughs are of copper. The discontinuity of each discontinuous metallic layer is such that the density of copper is in the range 20-80%, within a window of about 50 micrometre x 50 micrometre.

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