公开(公告)号：FR2782859B1

公开(公告)日：2000-11-17

申请号：FR9810929

申请日：1998-08-28

Applicant: ST MICROELECTRONICS SA

Inventor： MAGNON DIDIER ,  GUITTON FABRICE ,  SIMONNET JEAN MICHEL ,  LADIRAY OLIVIER

IPC: H01L29/74 ,  H01L21/822 ,  H01L27/06 ,  H01L29/744 ,  H03K17/16 ,  H03K17/732 ,  H03K17/72 ,  H03K17/22 ,  H01L27/082

Abstract: A one-way switching circuit of the type including a gate tun-off thyristor biased to be normally on, further includes, between the gate and a supply line, a capacitor and a controllable switch connected in parallel.

公开(公告)号：FR2834385A1

公开(公告)日：2003-07-04

申请号：FR0117040

申请日：2001-12-28

Applicant: ST MICROELECTRONICS SA

Inventor： LADIRAY OLIVIER

IPC: H01L27/08 ,  H01L29/74 ,  H01L29/747

Abstract: The bidirectional switch is formed in a semiconductor substrate (1) of n-type conductivity and comprises two mutually adjacent thyristors (Th1,Th2) in a central zone, a trigger zone on the front face of the substrate spaced from the central zone and containing a well region (11) of p-type conductivity with an inner region 912) of n-type conductivity, A number of Metallizations including the first metallization (M1) covering the rear face of the substrate, the second metallization (M2) covering the front-face layers of two thyristors, the third metallization (M3) of gate (G) (or trigger) formed on the well region 911), the fourth metallization (M4) on the inner region (12), and the fifth metallization (M5) on a ring channel (9); and on the rear face of the substrate a supplementary region (20) of p-type conductivity and an insulator layer (21) between the supplementary region and the first metallization. The supplementary region (20) is extended into the trigger zone, and the region is partly extended into the central zone by a distance (d1) counted from the projection of the external part of a ring region (8) of p-type conductivity. The fourth metallization (M4) is connected to the same potential as the rear-face metallization (M1), in particular to the ground. The fifth metallization (M5) is not connected and serves to ensure the equipotent of adjacent regions. The well region (11) is formed in turn of the central zone, and the region (12) is extended only on the side of the central zone and the first thyristor (Th1). A layer (6) of n-type conductivity is separated from the rest of the structure by a sufficiently large zone of the substrate to support a higher breakdown voltage, and the zone is separated in two parts by the ring ''stop'' channel (9).

公开(公告)号：FR2829634A1

公开(公告)日：2003-03-14

申请号：FR0111784

申请日：2001-09-12

Applicant: ST MICROELECTRONICS SA

Inventor： CASTAGNET THIERRY ,  LADIRAY OLIVIER

IPC: H03K17/94 ,  H03K19/0175

Abstract: A control stage (25) connected in parallel with galvanic isolation element, inhibits the operation of galvanic isolation element if the input current is less than a predetermined threshold.

公开(公告)号：FR2816133A1

公开(公告)日：2002-05-03

申请号：FR0014001

申请日：2000-10-31

Applicant: ST MICROELECTRONICS SA

Inventor： DUCLOS FRANK ,  LADIRAY OLIVIER ,  HEURTIER JEROME

IPC: H03K5/1534 ,  H03K19/013 ,  H03K17/56

Abstract: The invention concerns a switching circuit (20) adapted to generate a pulse when there occurs a rising edge of a signal applied on an input terminal (CTRL), comprising: a first NPN type bipolar transistor (TN2) whereof the transmitter is connected to the input terminal; a second transistor (TP2) whereof a control electrode is connected, through a first resistor (Re2), to the input terminal, the base of the first transistor being connected to a supply potential (VDD) by the second transistor in series with a second resistor (Rp2); and a third transistor (TN3) connecting an output terminal (22) of the switching circuit to a reference potential (GND) and whereof a control electrode is connected to the collector of the first transistor (TN2).

公开(公告)号：FR2797525A1

公开(公告)日：2001-02-16

申请号：FR9910413

申请日：1999-08-09

Applicant: ST MICROELECTRONICS SA

Inventor： DUCLOS FRANCK ,  SIMONNET JEAN MICHEL ,  LADIRAY OLIVIER

IPC: H01L29/747

Abstract: A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear surface layer of which is of the second conductivity type, a second main vertical thyristor, the rear surface layer of which is of the first conductivity type. A structure for triggering each of the first and second main thyristors is arranged to face regions mutually distant from the two main thyristors, the neighboring portions of which correspond to a region for which, for the first main thyristor, a short-circuit area between cathode and cathode gate is formed.

公开(公告)号：FR2797524A1

公开(公告)日：2001-02-16

申请号：FR9910412

申请日：1999-08-09

Applicant: ST MICROELECTRONICS SA

Inventor： DUCLOS FRANCK ,  SIMONNET JEAN MICHEL ,  LADIRAY OLIVIER

IPC: H01L29/747

Abstract: The bidirectional switch incorporating two thyristors and a transistor is formed in a semiconductor substrate (1) of n-type conductivity and comprises the first vertical thyristor (Th1) with a rear-face layer (2) of p-type conductivity, the second vertical thyristor (Th2) with a rear-face layer (6) of n-type conductivity, an auxiliary thyristor with the rear-face layer (2) common with that of the first thyristor, a peripheral region (7) of p-type conductivity connecting the rear-face layer of auxiliary thyristor to the thyristor situated on the other side of substrate, the first metallization (M1) on the rear face of substrate, and the second metallization (M2) connecting the front-face layers of the first and second thyristors. The supplementary region (10) has the function of an insulator layer between the rear face of auxiliary thyristor and the first metallization. The supplementary region (10) is of semiconductor material of n-type conductivity, or of silicon dioxide (SiO2). The thickness of supplementary region (10) is less than that of the rear-face region (6) of second thyristor, the latter is about 10-15 micrometer. The main current of auxiliary thyristor is diverted because of the presence of supplementary layer, as well as the base current of transistor, which is a part of auxiliary thyristor.

公开(公告)号：DE60029168D1

公开(公告)日：2006-08-17

申请号：DE60029168

申请日：2000-08-08

Applicant: ST MICROELECTRONICS SA

Inventor： DUCLOS FRANCK ,  SIMONNET JEAN-MICHEL ,  LADIRAY OLIVIER

IPC: H01L29/747

Abstract: The bidirectional switch incorporating two thyristors and a transistor is formed in a semiconductor substrate (1) of n-type conductivity and comprises the first vertical thyristor (Th1) with a rear-face layer (2) of p-type conductivity, the second vertical thyristor (Th2) with a rear-face layer (6) of n-type conductivity, an auxiliary thyristor with the rear-face layer (2) common with that of the first thyristor, a peripheral region (7) of p-type conductivity connecting the rear-face layer of auxiliary thyristor to the thyristor situated on the other side of substrate, the first metallization (M1) on the rear face of substrate, and the second metallization (M2) connecting the front-face layers of the first and second thyristors. The supplementary region (10) has the function of an insulator layer between the rear face of auxiliary thyristor and the first metallization. The supplementary region (10) is of semiconductor material of n-type conductivity, or of silicon dioxide (SiO2). The thickness of supplementary region (10) is less than that of the rear-face region (6) of second thyristor, the latter is about 10-15 micrometer. The main current of auxiliary thyristor is diverted because of the presence of supplementary layer, as well as the base current of transistor, which is a part of auxiliary thyristor.

公开(公告)号：FR2802366B1

公开(公告)日：2002-05-31

申请号：FR9915773

申请日：1999-12-14

Applicant: ST MICROELECTRONICS SA

Inventor： LADIRAY OLIVIER

IPC: H03K3/57 ,  H03K17/30 ,  H03K3/021

Abstract: A pulse-controlled analog flip-flop includes a charge element; a charge storage element connected to the charge element; an element for detecting the voltage across the storage element; and an element for discharging the storage element when the detection element has detected that the voltage across the storage element has reached a predetermined threshold.

公开(公告)号：FR2797524B1

公开(公告)日：2001-10-12

申请号：FR9910412

申请日：1999-08-09

Applicant: ST MICROELECTRONICS SA

Inventor： DUCLOS FRANCK ,  SIMONNET JEAN MICHEL ,  LADIRAY OLIVIER

IPC: H01L29/747

Abstract: The bidirectional switch incorporating two thyristors and a transistor is formed in a semiconductor substrate (1) of n-type conductivity and comprises the first vertical thyristor (Th1) with a rear-face layer (2) of p-type conductivity, the second vertical thyristor (Th2) with a rear-face layer (6) of n-type conductivity, an auxiliary thyristor with the rear-face layer (2) common with that of the first thyristor, a peripheral region (7) of p-type conductivity connecting the rear-face layer of auxiliary thyristor to the thyristor situated on the other side of substrate, the first metallization (M1) on the rear face of substrate, and the second metallization (M2) connecting the front-face layers of the first and second thyristors. The supplementary region (10) has the function of an insulator layer between the rear face of auxiliary thyristor and the first metallization. The supplementary region (10) is of semiconductor material of n-type conductivity, or of silicon dioxide (SiO2). The thickness of supplementary region (10) is less than that of the rear-face region (6) of second thyristor, the latter is about 10-15 micrometer. The main current of auxiliary thyristor is diverted because of the presence of supplementary layer, as well as the base current of transistor, which is a part of auxiliary thyristor.