公开(公告)号：FR2830984A1

公开(公告)日：2003-04-18

申请号：FR0113375

申请日：2001-10-17

Applicant: ST MICROELECTRONICS SA

Inventor： MARTY MICHEL ,  LEVERD FRANCOIS ,  CORONEL PHILIPPE ,  TORRES JOAQUIM

IPC: H01L21/762 ,  H01L21/764

公开(公告)号：FR2821208B1

公开(公告)日：2003-04-11

申请号：FR0102347

申请日：2001-02-21

Applicant: ST MICROELECTRONICS SA

Inventor： CORONEL PHILIPPE ,  LEVERD FRANCOIS ,  FERREIRA PAUL

IPC: H01L21/60 ,  H01L21/768 ,  H01L23/52 ,  H01L21/8239

Abstract: The invention relates to a process for protection of the grid of a transistor in an integrated circuit for production of a local interconnection pad straddling over the grid and the silicon substrate on which it is formed. The process consists of applying a double dielectric-conducting layer on the transistor grid into which a polysilicon layer is added in order to use the selectivity principle, which is large considering the etching of polysilicon with respect to the oxide in which the local interconnection pad is formed. Furthermore, with the process according to the invention, a silicidation treatment can be applied beforehand on the active areas of the transistor and the grid.

公开(公告)号：FR2819633A1

公开(公告)日：2002-07-19

申请号：FR0100691

申请日：2001-01-18

Applicant: ST MICROELECTRONICS SA

Inventor： CORONEL PHILIPPE ,  PIAZZA MARC ,  LEVERD FRANCOIS

IPC: H01L21/8242 ,  H01L27/108

Abstract: A method for the integration of a Dynamic Random Access Memory (DRAM), allowing a freedom from the alignment margins inherent in the photoengraving of the upper electrode for the contact passage of the bit line, the retreat of the upper electrode being auto-aligned on the lower electrode, consists of: (a) forming a topographical difference at the spot (A) where the opening for the upper electrode is to be realised; (b) depositing a layer of non-doped polysilicon on the upper electrode; (c) producing an implantation of strongly inclined doping in this layer; (d) selectively engraving the non-doped part of the layer situated in the lower part of the zone (A) presenting the topographical difference; (e) and engraving the remaining part of the polysilicon layer as well as the upper electrode layer situated in the lower part.

公开(公告)号：FR2954587A1

公开(公告)日：2011-06-24

申请号：FR0957950

申请日：2009-11-10

Applicant: ST MICROELECTRONICS SA ,  ST MICROELECTRONICS CROLLES 2

Inventor： MARTY MICHEL ,  LEVERD FRANCOIS

IPC: H01L27/146 ,  H01L21/768

Abstract: L'invention concerne un procédé de fabrication d'un capteur d'images éclairé par la face arrière, comprenant les étapes suivantes : (a) former, dans et sur une couche de silicium (14) de type SOI, des composants de capture et de transfert de porteurs photo-générés (24, 26, 27) et des régions d'isolement (28) ; (b) former un empilement de niveaux d'interconnexion (16) sur la couche de silicium (14) et fixer, sur l'empilement d'interconnexion, une poignée semiconductrice (22) ; (c) éliminer le support semiconducteur (10) ; (d) former, dans la couche isolante (12) et la couche de silicium (14), des tranchées (42, 44) atteignant les régions d'isolement ; (e) déposer une couche de silicium amorphe fortement dopée (46) sur les parois et le fond des tranchées et faire cristalliser ladite couche de silicium amorphe (48) ; et (f) remplir les tranchées d'un matériau réfléchissant (50).

公开(公告)号：FR2838866B1

公开(公告)日：2005-06-24

申请号：FR0205073

申请日：2002-04-23

Applicant: ST MICROELECTRONICS SA

Inventor： CORONEL PHILIPPE ,  LEVERD FRANCOIS ,  SKOTNICKI THOMAS

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/68 ,  H01L21/762 ,  H01L21/8242 ,  H01L23/544 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L51/00 ,  H01L51/40 ,  H01L21/70 ,  H01L27/108

Abstract: Fabrication of an integrated electronic component comprises: producing an initial structure (SI) incorporating volumes of respective materials forming a definite pattern (M) on a first substrate; transferring the pattern to a second substrate (200); and producing, on the second substrate surface, an additional structure by using the volumes of the materials of the pattern as alignment markers. Fabrication of an integrated electronic component comprises: (a) producing, on the surface of a first substrate (100), an initial structure (SI) incorporating volumes of respective materials, at least part of the volumes forming a definite pattern (M); (b) transferring at least a part of the initial structure (SI) comprising the pattern of the first substrate (100) to a second substrate (200); and (c) producing, on the surface of the second substrate (200), an additional structure by using at least some of the volumes of the materials of the pattern (M) as alignment markers. Independent claims are given for: (i) an integrated electronic component obtained by the invented process; and (ii) an electronic device comprising a transistor, or a diode, or a dynamic random access memory (DRAM) element.

公开(公告)号：FR2830984B1

公开(公告)日：2005-02-25

申请号：FR0113375

申请日：2001-10-17

Applicant: ST MICROELECTRONICS SA

Inventor： MARTY MICHEL ,  LEVERD FRANCOIS ,  CORONEL PHILIPPE ,  TORRES JOAQUIM

IPC: H01L21/762 ,  H01L21/764

公开(公告)号：FR2819633B1

公开(公告)日：2003-05-30

申请号：FR0100691

申请日：2001-01-18

Applicant: ST MICROELECTRONICS SA

Inventor： CORONEL PHILIPPE ,  PIAZZA MARC ,  LEVERD FRANCOIS

IPC: H01L21/8242 ,  H01L27/108

Abstract: The invention relates to a DRAM integration method that does away with the alignment margins inherent to the photoetching step of the upper electrode of the capacitance for inserting the bit line contact. The removal of the upper electrode is self-aligned on the lower electrode of the capacitance. This is accomplished by forming a difference in topography at the point where the opening of the upper electrode is to be made, and depositing a non-doped polysilicon layer on the upper electrode. An implantation of dopants is performed on this layer, and the part of the non-doped layer located in the lower part of the zone showing the difference in topography is selectively etched. The remainder of the polysilicon layer and the part of the upper electrode located in the lower layer are also etched.

公开(公告)号：FR2821208A1

公开(公告)日：2002-08-23

申请号：FR0102347

申请日：2001-02-21

Applicant: ST MICROELECTRONICS SA

Inventor： CORONEL PHILIPPE ,  LEVERD FRANCOIS ,  FERREIRA PAUL

IPC: H01L21/60 ,  H01L21/768 ,  H01L23/52 ,  H01L21/8239

Abstract: The invention relates to a process for protection of the grid of a transistor in an integrated circuit for production of a local interconnection pad straddling over the grid and the silicon substrate on which it is formed. The process consists of applying a double dielectric-conducting layer on the transistor grid into which a polysilicon layer is added in order to use the selectivity principle, which is large considering the etching of polysilicon with respect to the oxide in which the local interconnection pad is formed. Furthermore, with the process according to the invention, a silicidation treatment can be applied beforehand on the active areas of the transistor and the grid.