公开(公告)号：FR2914497B1

公开(公告)日：2009-06-12

申请号：FR0754221

申请日：2007-04-02

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL ,  LHORTE ANDRE ,  POVEDA PATRICK

IPC: H01L23/66

Abstract: A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.

公开(公告)号：FR2914497A1

公开(公告)日：2008-10-03

申请号：FR0754221

申请日：2007-04-02

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL ,  LHORTE ANDRE ,  POVEDA PATRICK

IPC: H01L23/66

Abstract: L'invention concerne une structure comprenant au moins deux composants voisins (D1, D2), susceptibles de fonctionner à des hautes fréquences, formés dans un substrat mince de silicium s'étendant sur un support de silicium (5) et séparé de celui-ci par une couche isolante (7), les composants (D1, D2) étant séparés latéralement par des régions isolantes (11). Le support de silicium (5) a, au moins au voisinage de sa partie en contact avec la couche isolante (7), une résistivité supérieure ou égale à 1000 ohms.cm.

公开(公告)号：FR2834386A1

公开(公告)日：2003-07-04

申请号：FR0117044

申请日：2001-12-28

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL

IPC: H01L27/08 ,  H01L29/74 ,  H01L29/747

Abstract: The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate ( 1 ) comprising first and second vertical thyristors (Th 1 , Th 2 ), a first electrode (A 2 ) of the first thyristor, on the front side of the component, corresponding to a first N-type region ( 6 ) formed in a first P-type box ( 5 ), the first box corresponding to a first electrode (A 2 ) of the second thyristor, the first box containing a second N-type region ( 8 ); and a pilot structure comprising, above an extension of a second electrode region ( 4 ) of the second thyristor, a second P-type box ( 11 ) containing third and fourth N-type regions, the third region ( 12 ) and a portion of the second box ( 11 ) being connected to a gate terminal (G), the fourth region ( 13 ) being connected to the second region ( 8 ).

公开(公告)号：FR2818806A1

公开(公告)日：2002-06-28

申请号：FR0016836

申请日：2000-12-21

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL

IPC: H01L29/747 ,  H03K17/06 ,  H03K17/72

Abstract: The invention concerns a bidirectional electronic switch of the pulse-controlled bistable type comprising a monolithic semiconductor circuit including a vertical bidirectional switch structure (TR; ACS) provided with a gate terminal (G 1 ), first (Th 1 ) and second (Th 2 ) thyristor structures whereof the anodes are formed on the front face side, the first thyristor anode region containing a supplementary P-type region ( 6 ), and a metallization (A 1, A 2 ) connected to the main surface of the front face of the vertical bidirectional component and to the second thyristor anode; a capacitor (C) connected to the first thyristor anode and to the second thyristor supplementary N-type region; and a switch (SW) for short-circuiting the capacitor.

公开(公告)号：FR2818805A1

公开(公告)日：2002-06-28

申请号：FR0016835

申请日：2000-12-21

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL

IPC: H01L29/747 ,  H03K17/72

Abstract: The invention concerns a bidirectional switch formed in a N-type semiconductor substrate, comprising a first main vertical thyristor whereof the rear face layer is of P-type conductivity, a second main vertical thyristor whereof the rear face layer is N-type, a P-type peripheral region extending from the front face to the rear face, a first metallization covering the rear face, a second metallization on the front face side connecting the front face layers of the first and second thyristor, and a N-type gate region in part of the upper surface of the peripheral region.

公开(公告)号：FR2800513B1

公开(公告)日：2002-03-29

申请号：FR9914011

申请日：1999-11-03

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL

IPC: H01L29/74 ,  H01L29/747 ,  H01L21/00

Abstract: The detector of on-off states of a power component of vertical architecture is formed in a semiconductor substrate (1), which is of a weakly doped n-type conductivity, having front and rear faces, and an insulation wall (7), which is of p-type conductivity, that is opposite to that of the substrate, which surrounds a region (21) corresponding to the power component. The detector is formed at the exterior of the insulation wall, and is constituted by a vertical component having the on-off states switched by parasitic charges propagating to a region (22) exterior of the insulation wall when the power component is in on state. The detector is constituted by a vertical transistor with the substrate as the base. The region (22) is preferentially limited by an insulation wall (23). The vertical transistor comprises, on the side of lower face, a deep diffusion region formed at the same time as the diffusion of insulation wall of lower face. The detector can comprise several vertical transistors with the emitter regions, formed on the side of lower face, having different diffusion vertical transistors with the emitter regions, formed on the side of lower face, having different diffusion depths. The detector component has a metallization (25) cover connected to a potential fixed with respect to the reference potential. The metallization (24) is connected to a low supply voltage (Vcc) by the intermediary of a high-value resistance (R).

公开(公告)号：FR2800513A1

公开(公告)日：2001-05-04

申请号：FR9914011

申请日：1999-11-03

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL

IPC: H01L29/74 ,  H01L29/747 ,  H01L21/00

Abstract: The detector of on-off states of a power component of vertical architecture is formed in a semiconductor substrate (1), which is of a weakly doped n-type conductivity, having front and rear faces, and an insulation wall (7), which is of p-type conductivity, that is opposite to that of the substrate, which surrounds a region (21) corresponding to the power component. The detector is formed at the exterior of the insulation wall, and is constituted by a vertical component having the on-off states switched by parasitic charges propagating to a region (22) exterior of the insulation wall when the power component is in on state. The detector is constituted by a vertical transistor with the substrate as the base. The region (22) is preferentially limited by an insulation wall (23). The vertical transistor comprises, on the side of lower face, a deep diffusion region formed at the same time as the diffusion of insulation wall of lower face. The detector can comprise several vertical transistors with the emitter regions, formed on the side of lower face, having different diffusion vertical transistors with the emitter regions, formed on the side of lower face, having different diffusion depths. The detector component has a metallization (25) cover connected to a potential fixed with respect to the reference potential. The metallization (24) is connected to a low supply voltage (Vcc) by the intermediary of a high-value resistance (R).

公开(公告)号：FR2797525A1

公开(公告)日：2001-02-16

申请号：FR9910413

申请日：1999-08-09

Applicant: ST MICROELECTRONICS SA

Inventor： DUCLOS FRANCK ,  SIMONNET JEAN MICHEL ,  LADIRAY OLIVIER

IPC: H01L29/747

Abstract: A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear surface layer of which is of the second conductivity type, a second main vertical thyristor, the rear surface layer of which is of the first conductivity type. A structure for triggering each of the first and second main thyristors is arranged to face regions mutually distant from the two main thyristors, the neighboring portions of which correspond to a region for which, for the first main thyristor, a short-circuit area between cathode and cathode gate is formed.

公开(公告)号：FR2797524A1

公开(公告)日：2001-02-16

申请号：FR9910412

申请日：1999-08-09

Applicant: ST MICROELECTRONICS SA

Inventor： DUCLOS FRANCK ,  SIMONNET JEAN MICHEL ,  LADIRAY OLIVIER

IPC: H01L29/747

Abstract: The bidirectional switch incorporating two thyristors and a transistor is formed in a semiconductor substrate (1) of n-type conductivity and comprises the first vertical thyristor (Th1) with a rear-face layer (2) of p-type conductivity, the second vertical thyristor (Th2) with a rear-face layer (6) of n-type conductivity, an auxiliary thyristor with the rear-face layer (2) common with that of the first thyristor, a peripheral region (7) of p-type conductivity connecting the rear-face layer of auxiliary thyristor to the thyristor situated on the other side of substrate, the first metallization (M1) on the rear face of substrate, and the second metallization (M2) connecting the front-face layers of the first and second thyristors. The supplementary region (10) has the function of an insulator layer between the rear face of auxiliary thyristor and the first metallization. The supplementary region (10) is of semiconductor material of n-type conductivity, or of silicon dioxide (SiO2). The thickness of supplementary region (10) is less than that of the rear-face region (6) of second thyristor, the latter is about 10-15 micrometer. The main current of auxiliary thyristor is diverted because of the presence of supplementary layer, as well as the base current of transistor, which is a part of auxiliary thyristor.