公开(公告)号：ITMI20022785A1

公开(公告)日：2004-06-30

申请号：ITMI20022785

申请日：2002-12-30

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO ,  CLEMENTI CESARE ,  PAVAN ALESSIA

IPC: G11B20060101 ,  H01L21/302 ,  H01L21/461 ,  H01L21/8247 ,  H01L27/115

公开(公告)号：DE69227772D1

公开(公告)日：1999-01-14

申请号：DE69227772

申请日：1992-09-30

Applicant: ST MICROELECTRONICS SRL

Inventor： CRISENZA GIUSEPPE ,  CLEMENTI CESARE

IPC: H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L21/28 ,  H01L29/41

Abstract: A method comprising the steps of depositing a first (12) and second (17) polysilicon layer, separated by an oxide layer (13); selectively etching the second polysilicon layer (17) to form first gate regions (18); forming first substrate regions (26, 29) in the substrate (2) and laterally in relation to the first gate regions; selectively etching the first polysilicon layer (12) to form second gate regions of a length greater than the first gate regions (18); and forming in the substrate, laterally in relation to the second gate regions (12) and partially overlapping the first substrate regions (26, 29), second substrate regions (37, 38) of a higher doping level than the first substrate regions (26, 29).

公开(公告)号：DE69226358D1

公开(公告)日：1998-08-27

申请号：DE69226358

申请日：1992-05-27

Applicant: ST MICROELECTRONICS SRL

Inventor： CLEMENTI CESARE ,  GHIDINI GABRIELLA ,  TOSI MARINA

IPC: G11C17/00 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L21/28

Abstract: The use of an O-N-RTN (Oxide-Nitride-Rapid Thermal Nitrided Polysilicon) interpoly dielectric multilayer instead of a customary O-N-O (Oxide-Nitride-Oxide) multilayer in the floating gate structure of a progammable, read-only memory cell has beneficial effects on the performance of the cell and facilitates its scaling down.