公开(公告)号：IT1306964B1

公开(公告)日：2001-10-11

申请号：ITMI990081

申请日：1999-01-19

Applicant: ST MICROELECTRONICS SRL

Inventor： MICHELONI RINO ,  KHOURI OSAMA ,  MOTTA ILARIA ,  SACCO ANDREA ,  TORELLI GUIDO

IPC: G11C5/14 ,  G11C8/08 ,  G11C11/56 ,  G11C16/26

Abstract: A circuit for the regulation of the word line voltage in a memory, comprising a voltage regulator suitable to generate an output regulated voltage to be supplied to one or more word lines of the memory when the one or more word lines are being selected. The circuit includes a voltage boosting circuit that is coupled to the output of said voltage regulator and that can be activated upon the selection of one or more memory word lines in order to boost the regulated voltage upon the selection of the one or more memory word lines.

公开(公告)号：ITMI990081A1

公开(公告)日：2000-07-19

申请号：ITMI990081

申请日：1999-01-19

Applicant: ST MICROELECTRONICS SRL

Inventor： MICHELONI RINO ,  KHOURI OSAMA ,  MOTTA ILARIA ,  SACCO ANDREA ,  TORELLI GUIDO

IPC: G11C5/14 ,  G11C8/08 ,  G11C11/56 ,  G11C16/26

Abstract: A circuit for the regulation of the word line voltage in a memory, comprising a voltage regulator suitable to generate an output regulated voltage to be supplied to one or more word lines of the memory when the one or more word lines are being selected. The circuit includes a voltage boosting circuit that is coupled to the output of said voltage regulator and that can be activated upon the selection of one or more memory word lines in order to boost the regulated voltage upon the selection of the one or more memory word lines.

公开(公告)号：ITMI990080A1

公开(公告)日：2000-07-19

申请号：ITMI990080

申请日：1999-01-19

Applicant: ST MICROELECTRONICS SRL

Inventor： MICHELONI RINO ,  KHOURI OSAMA ,  MOTTA ILARIA ,  SACCO ANDREA ,  TORELLI GUIDO

IPC: G11C11/56 ,  G11C16/08 ,  G11C16/30