公开(公告)号：EP4156241A1

公开(公告)日：2023-03-29

申请号：EP22195558.6

申请日：2022-09-14

Applicant: STMicroelectronics S.r.l.

Inventor： SAGGIO, Mario Giuseppe ,  GUARNERA, Alfio

IPC: H01L21/82 ,  H01L27/06 ,  H01L29/16 ,  H01L29/78

Abstract: A silicon carbide power device (100) has: a die (2) having a functional layer (4) of silicon carbide and an edge area (2a) and an active area (2b), surrounded by the edge area (2a); gate structures (3') formed on a top surface (4a) of the functional layer (4) in the active area (2b); and a gate contact pad (18) for biasing the gate structures (3'). The device also has an integrated resistor (30) having a doped region (32), of a first conductivity type (N + ), arranged at the front surface (4a) of the functional layer (4) in the edge area (2a); wherein the integrated resistor (30) defines an insulated resistance in the functional layer (4), interposed between the gate structures (3') and the gate contact pad (18).

公开(公告)号：EP4036986A1

公开(公告)日：2022-08-03

申请号：EP22154043.8

申请日：2022-01-28

Applicant: STMicroelectronics S.r.l.

Inventor： SAGGIO, Mario Giuseppe ,  ZANETTI, Edoardo ,  FRAZZETTO, Alessia Maria ,  GUARNERA, Alfio ,  CAMALLERI, Cateno Marco ,  GRIMALDI, Antonio Giuseppe

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L21/04 ,  H01L29/417

Abstract: The vertical conduction MOSFET device (100)is formed by a body (105) of silicon carbide, which has a first type of conductivity and a face (105A), and by a superficial body region (115) of a second type of conductivity, which has a first doping level, extends into the body, from the face of the body, to a first depth (d sb ) along a first direction, and has a first width (W sb ) along a second direction transversal to the first direction. The MOSFET device is also formed by a source region (120) and by a deep body region (110). The source region is of the first type of conductivity, extends to the inside of the superficial body region, from the face of the body, to a second depth (d b ), along the first direction, and has a second width (W s ) along the second direction, wherein the second depth is smaller than the first depth and the second width is smaller than the first width. The deep body region is of the second type of conductivity, has a second doping level and extends into the body, at a distance from the face of the body and in direct electrical contact with the superficial body region, wherein the second doping level is higher than the first doping level.