公开(公告)号：EP3151282A1

公开(公告)日：2017-04-05

申请号：EP16161888.9

申请日：2016-03-23

Applicant: STMicroelectronics S.r.l.

Inventor： PATTI, Davide Giuseppe ,  GRIMALDI, Antonio Giuseppe

IPC: H01L29/08 ,  H01L29/78 ,  H01L21/336

Abstract: A vertical conduction integrated electronic device including: a semiconductor body (12); a trench (22) that extends through part of the semiconductor body and delimits a portion (24) of the semiconductor body, which comprises a first conduction region (16) having a first type of conductivity and a body region (40) having a second type of conductivity, which overlies the first conduction region; a gate region (30) of conductive material, which extends within the trench; an insulation region (39a) of dielectric material, which extends within the trench and is arranged between the gate region and the body region; and a second conduction region (20), which overlies the body region. The second conduction region is formed by a conductor.

Abstract translation: 垂直传导电子设备集成，包括：半导体主体（12）; 的沟槽（22）那样通过半导体本体的一部分延伸，并限定所述半导体本体的部分（24），其包括具有第一类型导电性的和主体区域（40）具有第二的第一导电区域（16） 性，这覆盖在第一传导区域的类型; 导电材料，其在所述沟槽内延伸的栅极区（30）; 电介质材料，其在所述沟槽内延伸，并且所述栅区和所述本体区域之间设置的绝缘区域（39A）的; 并且其覆盖所述主体区域中的第二传导区（20）。 第二导电区域由导体形成。

公开(公告)号：EP4036986A1

公开(公告)日：2022-08-03

申请号：EP22154043.8

申请日：2022-01-28

Applicant: STMicroelectronics S.r.l.

Inventor： SAGGIO, Mario Giuseppe ,  ZANETTI, Edoardo ,  FRAZZETTO, Alessia Maria ,  GUARNERA, Alfio ,  CAMALLERI, Cateno Marco ,  GRIMALDI, Antonio Giuseppe

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L21/04 ,  H01L29/417

Abstract: The vertical conduction MOSFET device (100)is formed by a body (105) of silicon carbide, which has a first type of conductivity and a face (105A), and by a superficial body region (115) of a second type of conductivity, which has a first doping level, extends into the body, from the face of the body, to a first depth (d sb ) along a first direction, and has a first width (W sb ) along a second direction transversal to the first direction. The MOSFET device is also formed by a source region (120) and by a deep body region (110). The source region is of the first type of conductivity, extends to the inside of the superficial body region, from the face of the body, to a second depth (d b ), along the first direction, and has a second width (W s ) along the second direction, wherein the second depth is smaller than the first depth and the second width is smaller than the first width. The deep body region is of the second type of conductivity, has a second doping level and extends into the body, at a distance from the face of the body and in direct electrical contact with the superficial body region, wherein the second doping level is higher than the first doping level.

公开(公告)号：EP3151282B1

公开(公告)日：2020-11-11

申请号：EP16161888.9

申请日：2016-03-23

Applicant: STMICROELECTRONICS S.r.l.

Inventor： PATTI, Davide Giuseppe ,  GRIMALDI, Antonio Giuseppe

IPC: H01L29/08 ,  H01L29/78 ,  H01L21/336