公开(公告)号：EP4036986A1

公开(公告)日：2022-08-03

申请号：EP22154043.8

申请日：2022-01-28

Applicant: STMicroelectronics S.r.l.

Inventor： SAGGIO, Mario Giuseppe ,  ZANETTI, Edoardo ,  FRAZZETTO, Alessia Maria ,  GUARNERA, Alfio ,  CAMALLERI, Cateno Marco ,  GRIMALDI, Antonio Giuseppe

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L21/04 ,  H01L29/417

Abstract: The vertical conduction MOSFET device (100)is formed by a body (105) of silicon carbide, which has a first type of conductivity and a face (105A), and by a superficial body region (115) of a second type of conductivity, which has a first doping level, extends into the body, from the face of the body, to a first depth (d sb ) along a first direction, and has a first width (W sb ) along a second direction transversal to the first direction. The MOSFET device is also formed by a source region (120) and by a deep body region (110). The source region is of the first type of conductivity, extends to the inside of the superficial body region, from the face of the body, to a second depth (d b ), along the first direction, and has a second width (W s ) along the second direction, wherein the second depth is smaller than the first depth and the second width is smaller than the first width. The deep body region is of the second type of conductivity, has a second doping level and extends into the body, at a distance from the face of the body and in direct electrical contact with the superficial body region, wherein the second doping level is higher than the first doping level.

公开(公告)号：EP4036957A1

公开(公告)日：2022-08-03

申请号：EP22153333.4

申请日：2022-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： SAGGIO, Mario Giuseppe ,  FRAZZETTO, Alessia Maria ,  ZANETTI, Edoardo ,  GUARNERA, Alfio

IPC: H01L21/336 ,  H01L29/16 ,  H01L21/04 ,  H01L29/78 ,  H01L29/08 ,  H01L29/417

Abstract: The vertical conduction MOSFET device (100) is formed by a body (105) of silicon carbide, which has a first conductivity type and a face (105A); by a metallization region (140), which extends on the face of the body; by a body region (115) of a second conductivity type different from the first conductivity type, which extends in the body, from the face of the body, along a first direction (Y) parallel to the face and along a second direction (Z) transverse to the face; and by a source region (120) of the first conductivity type, which extends towards the inside of the body region, from the face of the body. The source region has a first portion (120A) and a second portion (120B), wherein the first portion has a first doping level and extends in direct electrical contact with the metallization region, wherein the second portion has a second doping level and extends in direct electrical contact with the first portion of the source region, and wherein the second doping level is lower than the first doping level.