Process for assembling a microactuator and a transducer in a hard disk R/W unit
    13.
    发明公开
    Process for assembling a microactuator and a transducer in a hard disk R/W unit 有权
    一种用于组装一组包括至少一个第一和一个第二元件,包括无包的显微组织的元素,其中一个过程

    公开(公告)号:EP1069552A1

    公开(公告)日:2001-01-17

    申请号:EP99830449.7

    申请日:1999-07-15

    Abstract: The process for assembling a microactuator (10) on a R/W transducer (6) comprises the steps of: forming a first wafer (11) of semiconductor material comprising a plurality of microactuators (10) including suspended regions (15) and fixed regions (22) separated from each other by first trenches (24); forming a second wafer (25) of semiconductor material comprising blocking regions (27, 27') connecting mobile (29') and fixed (29") intermediate regions separated from each other by second trenches (33a); bonding the two wafers (11, 25) so as to form a composite wafer (39) wherein the suspended regions (15) of the first wafer (11) are connected to the mobile intermediate regions (29') of the second wafer (25), and the fixed regions (22) of the first wafer are connected to the fixed intermediate regions (29") of the second wafer; cutting the composite wafer (39) into a plurality of units (41); fixing the mobile intermediate region (29') of each unit (41) to a respective R/W transducer (6); and removing the blocking regions (27'). The blocking regions (27') are made of silicon oxide, and the intermediate regions are made of polycrystalline silicon.

    Abstract translation: 用于在R / W换能器(6)组装的微致动(10)的方法包括以下步骤:形成半导体材料的第一晶片(11)包括微致动器包括悬浮的区域(15)和固定区域中的多个(10) (22)由第一沟槽(24)彼此分开; 形成包括阻挡区域(27,27“)连接的移动(29”的半导体材料)的第二晶片(25)和固定的(29“)通过第二沟槽(33A),键合两个晶片彼此分开的中间区域(11 ,25),以便形成worin第一晶片(11的悬置区(15)的复合材料晶片(39))被连接到所述第二晶片的移动中间区(29“)(25)和所述固定区 (22)所述第一晶片被连接到所述第二晶片的所述固定的中间区域(29“)的; 切割所述复合晶片(39)插入的单元有多个(41); 每个固定单元(41)的移动中间区(29“)到respectivement R / W换能器(6); 和去除所述阻挡区域(27“)。 阻挡区域(27“)由氧化硅制成的,以及中间区由多晶硅。

    Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections
    14.
    发明公开
    Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections 有权
    由集成器件的制造方法,具有电浮置的中间体,微结构

    公开(公告)号:EP0996157A1

    公开(公告)日:2000-04-26

    申请号:EP98830629.6

    申请日:1998-10-21

    CPC classification number: H01L23/4821 H01L23/5221 H01L2924/0002 H01L2924/00

    Abstract: The integrated device comprises an epitaxial layer (22) forming a first and a second region (23, 45) separated by at least one air gap (24). The first region (23) forms, for example, a suspended mass of an accelerometer. A bridge element (26) extends on the air gap (24) and has a suspended electrical connection line (28) electrically connecting the first and the second region (23, 45) and a protective structure (29) of etch-resistant material, which surrounds the electrical connection line (28) on all sides. The protective structure (29) is formed by a lower portion (31a) of silicon nitride and an upper portion (32a) of silicon carbide, the silicon carbide surrounding the electrical connection line (28) at the upper and lateral sides.

    Abstract translation: 该集成器件包括由至少一个空气间隙(24)隔开的外延层(22)形成第一和第二区域(23,45)。 所述第一区域(23)的形式,例如,加速度计的悬挂质量。 桥接元件(26)上的空气间隙(24)延伸,并且具有耐蚀刻材料的悬浮的电连接线(28)电连接所述第一和第二区域(23,45)和一个保护结构(29), 包围在各方面的电连接线(28)。 所述保护结构(29)是由氮化硅的下部(31A),并在碳化硅,所述碳化硅在周围的上侧和横向侧的电连接线(28)的上部(32A)形成。

    Integrated semi-conductor device comprising a chemoresistive gas microsensor and manufacturing process thereof
    15.
    发明公开
    Integrated semi-conductor device comprising a chemoresistive gas microsensor and manufacturing process thereof 失效
    具有集成的半导体器件的基于耐化学性气微传感器和它们的制备方法

    公开(公告)号:EP0882978A1

    公开(公告)日:1998-12-09

    申请号:EP97830272.7

    申请日:1997-06-04

    CPC classification number: G01N27/12

    Abstract: An integrated semi-conductor device (1) comprises, reciprocally superimposed, a thermally insulating region (3, 11); a thermal conduction region (25) of a high thermal conductivity material; a passivation oxide layer (30); and a gas sensitive element (34). The thermally insulating region (25) defines a preferential path towards the gas sensitive element (34) for the heat generated by the heater element (20), thereby the heat dispersed towards the substrate (2, 3) is negligible during the operation of the device (1).

    Abstract translation: 一个集成的半导体设备(1)包括,相互叠置,一个热绝缘区域(3,11); 高导热性材料的导热区(25); 钝化氧化物层(30); 和气体敏感元件(34)。 热绝缘区域(25)定义朝向由加热器元件(20)所产生的热气体敏感元件(34)的优先路径,从而分散朝向基板的热量(2,3)是可忽略不计的在外科手术期间 装置(1)。

    Photovoltaic device with concentration and spectral splitting of collected light beam
    16.
    发明公开
    Photovoltaic device with concentration and spectral splitting of collected light beam 有权
    集光光谱分光的光伏器件

    公开(公告)号:EP2141748A2

    公开(公告)日:2010-01-06

    申请号:EP09163201.8

    申请日:2009-06-19

    CPC classification number: H01L31/0232 H01L31/0547 Y02E10/52

    Abstract: A photovoltaic device comprising a plurality of photovoltaic cells of different spectral sensitivity, disposed on respective areas of inner surfaces of a hermetically sealed box-like body provided with a transparent pupil with antireflection treatment of its surface, is proposed. Through the pupil, a concentrated beam of collected radiation enters the device and a plurality of dichroic filters arranged in cascade on the optical axis of the transparent input pupil split the concentrated beam in distinct beams of different spectrum. As many mirrors, each having multiple reflecting surfaces, intercept respective beams of spectral subdivision, and the multiple reflecting surfaces redirect the radiation in form of a plurality of reflected beams each directed to illuminate the active area of a photovoltaic cells of a respective array.

    Abstract translation: 提出了一种包括多个光谱灵敏度不同的光伏电池的光电装置,其设置在设有透明光瞳的密封盒状体的内表面的相应区域上,其表面具有抗反射处理。 通过瞳孔,汇聚的辐射束集中进入该装置,并且在透明输入光瞳的光轴上级联布置的多个二向色滤光器将集中的光束分成不同光谱的不同光束。 许多反射镜,每一个具有多个反射表面,截取光谱细分的相应光束,并且多个反射表面以多个反射光束的形式重新定向辐射,每个反射光束指向照射相应阵列的光伏电池的有源区域。

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