公开(公告)号：EP3185415A1

公开(公告)日：2017-06-28

申请号：EP16172129.5

申请日：2016-05-31

Applicant: STMicroelectronics S.r.l.

Inventor： SAUTTO, Marco ,  QUAGLIA, Fabio ,  RICOTTI, Giulio ,  MAZZANTI, Andrea

IPC: H03F3/00 ,  H03F3/45

CPC classification number: H03G1/0094 ,  H03F3/005 ,  H03F3/2175 ,  H03F3/45 ,  H03F3/45264 ,  H03F2200/312 ,  H03F2203/45288

Abstract: In an embodiment, a programmable-gain amplifier includes: two complementary cross-coupled transistor (e.g. MOS) pairs (M n-a , M n-b ; M p-a , M p-b ) mutually coupled with each transistor in one pair (M n-a resp. M n-b ) having a current flow path cascaded with a current flow path of a respective one of the transistors in the other pair (M p-a resp. M p-b ) to provide first (A) and second (B) coupling points between said complementary cross-coupled transistor pairs (M n-a , M n-b ; M p-a , M p-b ); first (C a ) and second (C b ) sampling capacitors set between the first (A) and second (B) coupling points, respectively, and ground; first (10) and second (12) input stages having input terminals for receiving input signals (V in- , V in+ ) for sampling by the first (C a ) and second (C b ) sampling capacitors. Switching means (201 to 206; 301, 302) are provided for:
- i) coupling the first (10) and second (12) input stages to the first (C a ) and second (C b ) sampling capacitors, whereby the input signals (V in- , V in+ ) are sampled as sampled signals (V out+ , V out- ) on said first (C a ) and second (C b ) sampling capacitors, and
- ii) energizing (V dd ) the complementary cross-coupled transistor pairs (M n-a , M n-b ; M p-a , M p-b ) whereby the signals (V out+ , V out- ) sampled on the first (C a ) and second (C b ) sampling capacitors undergo negative resistance regeneration growing exponentially over time, thereby providing an exponential amplifier gain.

Abstract translation: 在一个实施例中，可编程增益放大器包括：与一对中的每个晶体管（Mn-a，Mn-b; Mp-a， （Mp-a或Mp-b）中的相应一个晶体管的电流流动路径级联的电流流动路径以提供第一（A）和第二（B） 所述互补交叉耦合晶体管对（Mn-a，Mn-b; Mp-a，Mp-b）之间的耦合点; 分别在第一（A）和第二（B）耦合点之间设置的第一（Ca）和第二（Cb）采样电容器以及地; 第一（10）和第二（12）输入级具有用于接收输入信号（Vin-，Vin +）以供第一（Ca）和第二（Cb）采样电容器采样的输入端。 提供切换装置（201至206; 301,302）用于：i）将第一（10）和第二（12）输入级耦合至第一（Ca）和第二（Cb）采样电容器，由此输入信号 Vin和Vin +）在所述第一（Ca）和第二（Cb）采样电容器上被采样为采样信号（Vout +，Vout-），以及-ii）激励（Vdd）互补交叉耦合晶体管对（Mn- 由此在第一（Ca）和第二（Cb）采样电容器上采样的信号（Vout +，Vout-）经历随时间呈指数增长的负电阻再生，由此提供指数放大器增益 。

公开(公告)号：EP4283272A1

公开(公告)日：2023-11-29

申请号：EP23172036.8

申请日：2023-05-08

Applicant: STMicroelectronics S.r.l.

Inventor： GIUSTI, Domenico ,  QUAGLIA, Fabio ,  FERRERA, Marco

IPC: G01L9/00 ,  B06B1/06 ,  G01H11/08 ,  G01N29/02 ,  G01N29/24

Abstract: Micromachined pressure transducer including: a fixed body (5) of semiconductor material, which laterally delimits a main cavity (7); a transduction structure (6), which is suspended on the main cavity (7) and includes at least a pair of deformable structures (10) and a movable region (8), which is formed by semiconductor material and is mechanically coupled to the fixed body (5) through the deformable structures (10). Each deformable structure (10) includes: a support structure (15) of semiconductor material, which includes a first and a second beam (20,22), each of which has ends fixed respectively to the fixed body (5) and to the movable region (8), the first beam (20) being superimposed, at a distance, on the second beam (22); and at least one piezoelectric transduction structure (12,14), mechanically coupled to the first beam (20). The piezoelectric transduction structures (12,14) are electrically controllable so that they cause corresponding deformations of the respective support structures (15) and a consequent translation of the movable region (8) along a translation direction (H).

公开(公告)号：EP3975273A1

公开(公告)日：2022-03-30

申请号：EP21199247.4

申请日：2021-09-27

Applicant: STMicroelectronics S.r.l.

Inventor： GIUSTI, Domenico ,  MARTINI, Irene ,  ASSANELLI, Davide ,  FERRARINI, Paolo ,  PRELINI, Carlo Luigi ,  QUAGLIA, Fabio

IPC: H01L41/08 ,  H01L41/09 ,  H01L41/319 ,  B06B1/06

Abstract: A piezoelectric microelectromechanical structure (10), provided with a piezoelectric layer structure (11) having a main extension in a horizontal plane (xy) and a variable cross-section in a plane (xz) transverse to the horizontal plane, comprises a bottom electrode (12), a piezoelectric material (14) constituted by a PZT film arranged on the bottom electrode, and a top electrode (16) arranged on the piezoelectric material, wherein the piezoelectric material has a first thickness (w1) along a vertical axis (z) at a first area (14') and a second thickness (w2) along the vertical axis (z) at a second area (14"), the second thickness being smaller than the first thickness. A corresponding manufacturing process is also disclosed.

公开(公告)号：EP3907178A1

公开(公告)日：2021-11-10

申请号：EP21171642.8

申请日：2021-04-30

Applicant: STMicroelectronics S.r.l.

Inventor： GIUSTI, Domenico ,  PRELINI, Carlo Luigi ,  FERRERA, Marco ,  LAZZARI, Carla Maria ,  SEGHIZZI, Luca ,  BONI, Nicolò ,  CARMINATI, Roberto ,  QUAGLIA, Fabio

IPC: B81B7/00

Abstract: The MEMS actuator (150) is formed by a substrate (50'), which surrounds a cavity (100); by a deformable structure (105) suspended on the cavity; by an actuation structure (65) formed by a first piezoelectric region (61) of a first piezoelectric material, supported by the deformable structure and configured to cause a deformation of the deformable structure; and by a detection structure (90) formed by a second piezoelectric region (80) of a second piezoelectric material, supported by the deformable structure and configured to detect the deformation of the deformable structure.

公开(公告)号：EP3025792A1

公开(公告)日：2016-06-01

申请号：EP15196387.3

申请日：2015-11-25

Applicant: STMicroelectronics S.r.l.

Inventor： ROSSI, Sandro ,  GHISU, Davide Ugo ,  QUAGLIA, Fabio ,  LEONE, Antonio Davide

IPC: B06B1/02 ,  H03K3/64

CPC classification number: G05F3/02 ,  B06B1/0215 ,  H03K4/94 ,  H03K17/162

Abstract: A transmission channel transmits high-voltage pulses and receives echos of the high-voltage pulses. The transmission channel includes a current generator circuit (104), which generates current-integrator drive currents, a receiver (108), which amplifies transducer-echo signals, and control circuitry (102). The control circuitry generates one or more control signals to control generation of current-integrator drive currents by the current generator circuit during transducer-driving periods and reception of transducer-echo signals by the receiver during echo-reception periods. A current integrator (106) integrates current-integrator drive currents generated by current generator circuit to generate transducer drive signals.

Abstract translation: 传输通道传输高电压脉冲并接收高电压脉冲的回波。 传输通道包括产生电流积分器驱动电流的电流发生器电路（104），放大换能器回波信号的接收器（108）和控制电路（102）。 控制电路产生一个或多个控制信号，以在换能器驱动周期期间由电流发生器电路控制电流积分器驱动电流的产生，并且在回波接收周期期间由接收器接收换能器 - 回波信号。 电流积分器（106）集成由电流发生器电路产生的电流积分器驱动电流以产生换能器驱动信号。

公开(公告)号：EP2656502A1

公开(公告)日：2013-10-30

申请号：EP10818066.2

申请日：2010-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： BOTTAREL, Valeria ,  RICOTTI, Giulio ,  QUAGLIA, Fabio

IPC: H03K17/081 ,  H03K17/30 ,  G01S7/52 ,  B06B1/02

CPC classification number: H03K17/16 ,  H03K17/08104 ,  H03K17/30

Abstract: A low voltage isolation switch is suitable for receiving from a connection node a high voltage signal and transmitting said high voltage signal to a load via a connection terminal. The isolation switch includes a driving block connected between first and second voltage reference terminals and including a first driving transistor coupled between the first voltage reference (Vss) and a first driving circuit node and a second driving transistor coupled between the driving circuit node and the second supply voltage reference. The switch comprises an isolation block connected to the connection terminal (pzt), the connection node, and the driving central circuit node and including a voltage limiter block, a diode block and a control transistor. The control transistor is connected across the diode block between the connection node and the connection terminal and has a control terminal connected to the driving central circuit node.