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    Process for assembling a microactuator and a transducer in a hard disk R/W unit
    15.
    发明公开
    Process for assembling a microactuator and a transducer in a hard disk R/W unit 有权
    一种用于组装一组包括至少一个第一和一个第二元件，包括无包的显微组织的元素，其中一个过程

    公开(公告)号：EP1069552A1

    公开(公告)日：2001-01-17

    申请号：EP99830449.7

    申请日：1999-07-15

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo ,  Zerbini, Sarah ,  Sassolini, Simone ,  Vigna, Benedetto

    IPC: G11B5/55 ,  G11B21/08 ,  H01L21/20 ,  H01L21/304

    CPC classification number: G11B5/56 ,  B81C1/00896 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: The process for assembling a microactuator (10) on a R/W transducer (6) comprises the steps of: forming a first wafer (11) of semiconductor material comprising a plurality of microactuators (10) including suspended regions (15) and fixed regions (22) separated from each other by first trenches (24); forming a second wafer (25) of semiconductor material comprising blocking regions (27, 27') connecting mobile (29') and fixed (29") intermediate regions separated from each other by second trenches (33a); bonding the two wafers (11, 25) so as to form a composite wafer (39) wherein the suspended regions (15) of the first wafer (11) are connected to the mobile intermediate regions (29') of the second wafer (25), and the fixed regions (22) of the first wafer are connected to the fixed intermediate regions (29") of the second wafer; cutting the composite wafer (39) into a plurality of units (41); fixing the mobile intermediate region (29') of each unit (41) to a respective R/W transducer (6); and removing the blocking regions (27'). The blocking regions (27') are made of silicon oxide, and the intermediate regions are made of polycrystalline silicon.

    Abstract translation: 用于在R / W换能器（6）组装的微致动（10）的方法包括以下步骤：形成半导体材料的第一晶片（11）包括微致动器包括悬浮的区域（15）和固定区域中的多个（10） （22）由第一沟槽（24）彼此分开; 形成包括阻挡区域（27,27“）连接的移动（29”的半导体材料）的第二晶片（25）和固定的（29“）通过第二沟槽（33A），键合两个晶片彼此分开的中间区域（11 ，25），以便形成worin第一晶片（11的悬置区（15）的复合材料晶片（39））被连接到所述第二晶片的移动中间区（29“）（25）和所述固定区 （22）所述第一晶片被连接到所述第二晶片的所述固定的中间区域（29“）的; 切割所述复合晶片（39）插入的单元有多个（41）; 每个固定单元（41）的移动中间区（29“）到respectivement R / W换能器（6）; 和去除所述阻挡区域（27“）。 阻挡区域（27“）由氧化硅制成的，以及中间区由多晶硅。

    Integrated triaxial magnetometer of semiconductor material manufactured in MEMS technology
    16.
    发明公开
    Integrated triaxial magnetometer of semiconductor material manufactured in MEMS technology 有权
    在Halbleiter-MEMS技术中的Integriertes Drei-Achsen-Magnetometer。

    公开(公告)号：EP2333572A1

    公开(公告)日：2011-06-15

    申请号：EP10194490.8

    申请日：2010-12-10

    Applicant: STMicroelectronics S.r.l.

    Inventor： Baldo, Lorenzo ,  Procopio, Francesco ,  Zerbini, Sarah

    IPC: G01R33/028 ,  G01R33/038

    CPC classification number: G01R33/0286 ,  G01R33/0005 ,  G01R33/028 ,  G01R33/038

    Abstract: Two suspended masses (1, 3) are configured so as to be flowed by respective currents (I) flowing in the magnetometer plane in mutually transversal directions and are capacitively coupled to lower electrodes (18b). Mobile sensing electrodes (11) are carried by the first suspended mass (1) and are capacitively coupled to respective fixed sensing electrodes (12). The first suspended mass (1) is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a first horizontal direction (X). The second suspended mass (3) is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a second horizontal direction (Y), and the first suspended mass is configured so as to be mobile in a direction parallel to the plane and transversal to the current flowing in the first suspended mass in presence of a magnetic field having a component in a vertical direction (Z).

    Abstract translation: 两个悬挂质量（1,3）被构造成以相互横向在磁力计平面中流动的相应电流（I）流动并且电容耦合到下电极（18b）。 移动感测电极（11）由第一悬挂质量（1）承载，并且电容耦合到相应的固定感测电极（12）。 第一悬挂质量块（1）被配置成在存在具有在第一水平方向（X）上的分量的磁场的情况下在横向于平面的方向上是可移动的。 第二悬挂质量体（3）被构造为在存在具有在第二水平方向（Y）上的分量的磁场的情况下在横向于平面的方向上是可移动的，并且第一悬浮质量体被配置为 在具有垂直方向（Z）的分量的磁场的存在下，在平行于平面的方向上移动并横向于在第一悬置质量块中流动的电流。

    Microelectromechanical inertial sensor, in particular for free-fall detection applications
    17.
    发明授权
    Microelectromechanical inertial sensor, in particular for free-fall detection applications 有权
    微机电惯性传感器，尤其是用于自由落体应用

    公开(公告)号：EP1879034B1

    公开(公告)日：2009-11-18

    申请号：EP06425485.7

    申请日：2006-07-14

    Applicant: STMicroelectronics S.r.l.

    Inventor： Merassi, Angelo ,  Zerbini, Sarah ,  Lasalandra, Ernesto ,  Vigna, Benedetto

    IPC: G01P15/08 ,  G01P15/125 ,  G11B19/04

    CPC classification number: G11B19/04 ,  G01P15/0891 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082

    Abstract: Described herein is an inertial sensor (1) provided with a detection structure (9, 19) sensitive to a first, a second and a third component of acceleration (a x , a y , a z ) along respective directions of detection (x, y, z), and generating respective electrical quantities as a function of said components of acceleration. The detection structure (9, 19) supplies at output a resultant electrical quantity (C) obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration (a) acting on the inertial sensor (1), given by a vector sum of the components of acceleration (a x , a y , a z ) . In particular, the detection structure (9, 19) is of a microelectromechanical type, and comprises a mobile portion (2, 12) made of semiconductor material forming with a fixed portion (8, 18) a first, a second and a third detection capacitor, and an electrical-interconnection portion (10, 20), connecting the detection capacitors in parallel; the resultant electrical quantity (C) being the capacitance obtained from said connection in parallel.

    Microelectromechanical inertial sensor, in particular for free-fall detection applications
    18.
    发明公开
    Microelectromechanical inertial sensor, in particular for free-fall detection applications 有权
    微机电惯性传感器，尤其是用于自由落体应用

    公开(公告)号：EP1879034A9

    公开(公告)日：2008-05-14

    申请号：EP06425485.7

    申请日：2006-07-14

    Applicant: STMicroelectronics S.r.l.

    Inventor： Merassi, Angelo ,  Zerbini, Sarah ,  Lasalandra, Ernesto ,  Vigna, Benedetto

    IPC: G01P15/08 ,  G01P15/125 ,  G11B19/04

    CPC classification number: G11B19/04 ,  G01P15/0891 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082

    Abstract: Described herein is an inertial sensor (1) provided with a detection structure (9, 19) sensitive to a first, a second and a third component of acceleration (a x , a y , a z ) along respective directions of detection (x, y, z), and generating respective electrical quantities as a function of said components of acceleration. The detection structure (9, 19) supplies at output a resultant electrical quantity (C) obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration (a) acting on the inertial sensor (1), given by a vector sum of the components of acceleration (a x , a y , a z ) . In particular, the detection structure (9, 19) is of a microelectromechanical type, and comprises a mobile portion (2, 12) made of semiconductor material forming with a fixed portion (8, 18) a first, a second and a third detection capacitor, and an electrical-interconnection portion (10, 20), connecting the detection capacitors in parallel; the resultant electrical quantity (C) being the capacitance obtained from said connection in parallel.

    Micro-electromechanical Inertial Sensor, in Particular for Free-fall Detection Applications
    19.
    发明公开
    Micro-electromechanical Inertial Sensor, in Particular for Free-fall Detection Applications 有权
    米克罗 - 电力机械师惯性传感器，Frefinall-Anwendungen的insbesondere

    公开(公告)号：EP1879034A1

    公开(公告)日：2008-01-16

    申请号：EP06425485.7

    申请日：2006-07-14

    Applicant: STMicroelectronics S.r.l.

    Inventor： Merassi, Angelo ,  Zerbini, Sarah ,  Lasalandra, Ernesto ,  Vigna, Benedetto

    IPC: G01P15/08 ,  G01P15/125 ,  G11B19/04

    CPC classification number: G11B19/04 ,  G01P15/0891 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082

    Abstract: Described herein is an inertial sensor (1) provided with a detection structure (9, 19) sensitive to a first, a second and a third component of acceleration (a x , a y , a z ) along respective directions of detection (x, y, z), and generating respective electrical quantities as a function of said components of acceleration. The detection structure (9, 19) supplies at output a resultant electrical quantity (C) obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration (a) acting on the inertial sensor (1), given by a vector sum of the components of acceleration (a x , a y , a z ) . In particular, the detection structure (9, 19) is of a microelectromechanical type, and comprises a mobile portion (2, 12) made of semiconductor material forming with a fixed portion (8, 18) a first, a second and a third detection capacitor, and an electrical-interconnection portion (10, 20), connecting the detection capacitors in parallel; the resultant electrical quantity (C) being the capacitance obtained from said connection in parallel.

    Abstract translation: 这里描述的是具有对沿着检测方向（x，y，z）的加速度（ax，ay，az）的第一，第二和第三分量敏感的检测结构（9,19）的惯性传感器（1） ），并且产生作为所述加速度分量的函数的相应的电量。 检测结构（9,19）在输出端提供作为所述电量的组合获得的合成电量（C），并与作用在惯性传感器（1）上的合成加速度（a）的值相关，由 加速度分量（ax，ay，az）的矢量和。 特别地，检测结构（9,19）是微机电类型的，并且包括由形成有固定部分（8,18）的半导体材料制成的可移动部分（2,12），第一，第二和第三检测 电容器和电连接部分（10,20），并联连接检测电容器; 所得电量（C）是从所述连接并联获得的电容。

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