公开(公告)号：EP4276056A9

公开(公告)日：2023-12-27

申请号：EP23170279.6

申请日：2023-04-27

Applicant: STMicroelectronics S.r.l.

Inventor： DANIELE, Filippo ,  BALDO, Lorenzo ,  MAERNA, Davide ,  DUQI, Enri

IPC: B81B7/00

Abstract: A microelectromechanical device includes a support structure (3, 5), a microelectromechanical system die (7), incorporating a microstructure (12) and a connection structure (13) between the microelectromechanical system die (7) and the support structure (3, 5). The connection structure (13) includes a spacer structure (15), joined to the support structure (3, 5), and a film (16) applied to one face of the spacer structure (15) opposite to the support structure (3, 5). The spacer structure (15) laterally delimits at least in part a cavity (18) and the film (16) extends on the cavity (18), at a distance from the support structure (3, 5). The microelectromechanical system die (7) is joined to the film (16) on the cavity (18).

公开(公告)号：EP4276056A1

公开(公告)日：2023-11-15

申请号：EP23170279.6

申请日：2023-04-27

Applicant: STMicroelectronics S.r.l.

Inventor： DANIELE, Filippo ,  BALDO, Lorenzo ,  MAERNA, Davide ,  DUQI, Enri

IPC: B81B7/00

Abstract: A microelectromechanical device includes a support structure (3, 5), a microelectromechanical system die (7), incorporating a microstructure (12) and a connection structure (13) between the microelectromechanical system die (7) and the support structure (3, 5). The connection structure (13) includes a spacer structure (15), joined to the support structure (3, 5), and a film (16) applied to one face of the spacer structure (15) opposite to the support structure (3, 5). The spacer structure (15) laterally delimits at least in part a cavity (18) and the film (16) extends on the cavity (18), at a distance from the support structure (3, 5). The microelectromechanical system die (7) is joined to the film (16) on the cavity (18).

公开(公告)号：EP4242619A1

公开(公告)日：2023-09-13

申请号：EP23154620.1

申请日：2023-02-02

Applicant: STMicroelectronics S.r.l.

Inventor： GIUSTI, Domenico ,  DUQI, Enri

IPC: G01L19/06 ,  G01L19/14 ,  G01L27/00 ,  G01N9/24

Abstract: A pressure sensor device (1) has: a pressure detection structure (2) provided in a first die (4) of semiconductor material; a package (20), configured to internally accommodate the pressure detection structure in an impermeable manner, the package having a base structure (21) and a body structure (22), arranged on the base structure, with an access opening (30) in contact with an external environment and internally defining a housing cavity (23), in which the first die (4) is arranged covered with a coating material (32). A piezoelectric transduction structure (35), of a ultrasonic type, is accommodated in the housing cavity, in order to allow detection of foreign material (42) above the coating material and within the package. In particular, the piezoelectric transduction structure (35) is integrated in the first die (4), which comprises a first portion (4'), wherein the pressure detection structure (2) is integrated, and a second portion (4"), separate and distinct from the first portion (4'), wherein the piezoelectric transduction structure (35) is integrated.

公开(公告)号：EP4001866A1

公开(公告)日：2022-05-25

申请号：EP21209147.4

申请日：2021-11-18

Applicant: STMicroelectronics S.r.l.

Inventor： VAIANA, Michele ,  DUQI, Enri ,  CASTAGNA, Maria Eloisa

IPC: G01J3/02 ,  G01J3/28 ,  G01J3/18 ,  G02B26/02

Abstract: Radiation sensor including a detection assembly (102; 202) and a chopper assembly (101), which are mechanically coupled to delimit a main cavity (61; 216); and wherein the chopper assembly (101) includes: a suspended movable structure (55), which extends in the main cavity (61; 261); and an actuation structure (63, 65), which is electrically controllable to cause a change of position of the suspended movable structure (55). The detection unit (102; 202) includes a detection structure (80; 180; 280; 380), which faces the main cavity (61; 261) and includes a number of detection devices (94; 194). The suspended movable structure (55) includes a first shield (34) of conductive material, which shields the detection devices (94) from the radiation, the shielding of the detection devices (94) being a function of the position of the suspended movable structure (55).

公开(公告)号：EP3726056A1

公开(公告)日：2020-10-21

申请号：EP20169715.8

申请日：2020-04-15

Applicant: STMicroelectronics S.r.l.

Inventor： GIUSTI, Domenico ,  BALDO, Lorenzo ,  DUQI, Enri

IPC: F04B43/04 ,  F04B45/047 ,  F04B43/02

Abstract: The micropump device (1) is formed in a monolithic body (3) of semiconductor material integrating a plurality of actuator elements (5) arranged side-by-side. Each actuator element (5) has a first chamber (15) extending at a distance from a first face (3A) of the monolithic body; a membrane (18) arranged between the first face (3A) and the first chamber (15); a piezoelectric element (19) extending on the first face (3A) over the membrane (18); a second chamber (20), arranged between the first chamber (15) and a second face (3B) of the monolithic body; a fluidic inlet path (10) fluidically connecting the second chamber (20) with the outside of the monolithic body (3); and a fluid outlet opening (11) extending in a transverse direction in the monolithic body (3) from the second face (3B) as far as the second chamber (20), through the first chamber (15). The monolithic formation of a plurality of actuator elements and the possibility of driving the actuator elements at different voltages enable precise adjustment of flows, from very low values to high values.

公开(公告)号：EP3687192A1

公开(公告)日：2020-07-29

申请号：EP20153473.2

申请日：2020-01-23

Applicant: STMicroelectronics S.r.l.

Inventor： CERINI, Fabrizio ,  DUQI, Enri ,  ADORNO, Silvia ,  BALDO, Lorenzo

IPC: H04R19/00

Abstract: An actuation structure (10) of a MEMS electroacoustic transducer (11) is formed in a die (12) of semiconductor material having a monolithic body (13) with a front surface (13a) and a rear surface (13b) extending in a horizontal plane (xy) and defined in which are: a frame (14); an actuator element (15) arranged in a central opening (16) defined by the frame (14); cantilever elements (18), coupled at the front surface (13a) between the actuator element (15) and the frame (14); and piezoelectric regions (19) arranged on the cantilever elements (18) and configured to be biased to cause a deformation of the cantilever elements (18) by the piezoelectric effect. A first stopper arrangement (30) is integrated in the die (12) and configured to interact with the cantilever elements (18) to limit a movement thereof in a first direction of a vertical axis (z) orthogonal to the horizontal plane (xy), towards the underlying central opening (16).

公开(公告)号：EP3141521B1

公开(公告)日：2020-07-22

申请号：EP16161870.7

申请日：2016-03-23

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  CONTI, Sebastiano

IPC: B81B7/00

公开(公告)号：EP4273091A1

公开(公告)日：2023-11-08

申请号：EP23167983.8

申请日：2023-04-14

Applicant: STMicroelectronics S.r.l.

Inventor： AZPEITIA URQUIA, Mikel ,  DUQI, Enri ,  NICOLI, Silvia ,  CAMPEDELLI, Roberto ,  VARISCO, Igor ,  TENTORI, Lorenzo

IPC: B81B3/00 ,  B81C1/00

Abstract: MEMS structure (1), comprising: a semiconductor body (30); a cavity (20) buried in the semiconductor body (30); a membrane (10) suspended on the cavity (20); and at least one antistiction bump (11) completely contained in the cavity (20) with the function of preventing the side of the membrane internal to the cavity from sticking to the opposite side, which delimits the cavity downwardly.

公开(公告)号：EP4239304A1

公开(公告)日：2023-09-06

申请号：EP23154638.3

申请日：2023-02-02

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  DANIELE, Filippo ,  BALDO, Lorenzo ,  CAPELLI, Giulio ,  ALONGI, Salvatore

IPC: G01L19/04 ,  G01L19/14 ,  G01L9/00

Abstract: A pressure sensor device (1) is provided with: a pressure detection structure (2) made in a first die (4) of semiconductor material; a package (20), configured to internally accommodate the pressure detection structure (2) in an impermeable manner, the package (20) having a base structure (21) and a body structure (22), arranged on the base structure (21), with an access opening (30) in contact with an external environment and internally defining a housing cavity (23), in which the first die (4) is arranged covered with a coating material (32). The pressure sensor device (1) is also provided with a heating structure (40), accommodated in the housing cavity (23) and for allowing heating of the pressure detection structure (2) from the inside of the package (20).

公开(公告)号：EP4155696A1

公开(公告)日：2023-03-29

申请号：EP22195319.3

申请日：2022-09-13

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  CASTAGNA, Maria Eloisa

IPC: G01J5/12 ,  H10N10/17 ,  H10N19/00

Abstract: Integrated thermal sensor having a housing (21) delimiting an internal space (26). A support region (30) extends through the internal space; a plurality of thermocouple elements (31) are carried by the support region (30) and are electrically coupled to each other. Each thermocouple element (31) is formed by a first and a second thermoelectrically active region (34, 35) of a first and, respectively, a second thermoelectrically active material, the first thermoelectrically active material having a first Seeback coefficient, the second thermoelectrically active material having a second Seeback coefficient, other than the first Seeback coefficient. At least one of the first and second thermoelectrically active regions (34, 35) is a silicon-based material. The first and second thermoelectrically active regions (34, 35) of each thermocouple element (31) are formed by respective elongated regions extending at a mutual distance into the internal space (26) of the housing (21), from and transversely to the support region (300).