公开(公告)号：EP3623341A1

公开(公告)日：2020-03-18

申请号：EP19196770.2

申请日：2019-09-11

Applicant: STMicroelectronics S.r.l.

Inventor： COSTANTINI, Sonia ,  ASSANELLI, Davide ,  BORTOLOTTI, Aldo Luigi ,  VIMERCATI, Michele ,  VARISCO, Igor

IPC: B81C1/00

Abstract: A manufacturing process comprising the steps of: forming a bottom semiconductor region (130) including a main sub-region (131), which extends through a bottom dielectric region (112_bot, 114_bot) that coats a semiconductor wafer (100), and a secondary sub-region (134), which coats the bottom dielectric region and surrounds the main sub-region; forming a first top cavity (140) and a second top cavity (142) through the wafer, delimiting a fixed body (145, 146, 148, 154, 155) and a patterned structure (151, 152, 153) that includes a central portion (151), which contacts the main sub-region, and deformable portions (152, 153), in contact with the bottom dielectric region; forming a bottom cavity (180) through the bottom semiconductor region, as far as the bottom dielectric region, the bottom cavity laterally delimiting a stiffening region (191) that includes the main sub-region and leaving exposed parts of the bottom dielectric region that contact the deformable portions and parts of the bottom dielectric region that delimit the first and second top cavities; and selectively removing the parts left exposed by the bottom cavity.

公开(公告)号：EP3247134A1

公开(公告)日：2017-11-22

申请号：EP16206878.7

申请日：2016-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： VARISCO, Igor ,  LAMAGNA, Luca ,  ADORNO, Silvia ,  PERLETTI, Matteo ,  GATTERE, Gabriele ,  VALZASINA, Carlo ,  CONTI, Sebastiano

IPC: H04R19/00 ,  H04R31/00 ,  B81C1/00

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00158 ,  B81C1/00166 ,  B81C2201/0109 ,  B81C2201/0111 ,  B81C2201/0133 ,  G01H11/06 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/023

Abstract: A MEMS acoustic transducer (20) provided with: a substrate (21) of semiconductor material, having a back surface (21b) and a front surface (21a) opposite with respect to a vertical direction (z); a first cavity (22) formed within the substrate (21), which extends from the back surface (21b) to the front surface (21a); a membrane (23) which is arranged at the upper surface (21a), suspended above the first cavity (22) and anchored along a perimeter thereof to the substrate (21); and a combfingered electrode arrangement (28) including a number of mobile electrodes (29) coupled to the membrane (23) and a number of fixed electrodes (30) coupled to the substrate (21) and facing respective mobile electrodes (29) for forming a sensing capacitor, wherein a deformation of the membrane (23) as a result of incident acoustic pressure waves causes a capacitive variation (ΔC) of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane (23) and extends parallel thereto.

Abstract translation: 一种MEMS声换能器（20），其设置有：半导体材料的衬底（21），其具有相对于竖直方向（z）相对的后表面（21b）和前表面（21a）; 形成在所述基板（21）内的从所述背面（21b）延伸到所述前表面（21a）的第一空腔（22）; 设置在所述上​​表面（21a）处并悬挂在所述第一腔体（22）上方并沿其周边锚定到所述基底（21）的膜（23）; 以及包括耦合到所述膜（23）的多个可动电极（29）和耦合到所述衬底（21）并且面向相应的可动电极（29）以形成的多个固定电极（30）的梳状指状电极布置 感测电容器，其中由于入射声压波导致膜（23）的变形导致感测电容器的电容变化（ΔC）。 特别地，梳形电极装置相对于膜（23）垂直放置并且与其平行地延伸。

公开(公告)号：EP4273091A1

公开(公告)日：2023-11-08

申请号：EP23167983.8

申请日：2023-04-14

Applicant: STMicroelectronics S.r.l.

Inventor： AZPEITIA URQUIA, Mikel ,  DUQI, Enri ,  NICOLI, Silvia ,  CAMPEDELLI, Roberto ,  VARISCO, Igor ,  TENTORI, Lorenzo

IPC: B81B3/00 ,  B81C1/00

Abstract: MEMS structure (1), comprising: a semiconductor body (30); a cavity (20) buried in the semiconductor body (30); a membrane (10) suspended on the cavity (20); and at least one antistiction bump (11) completely contained in the cavity (20) with the function of preventing the side of the membrane internal to the cavity from sticking to the opposite side, which delimits the cavity downwardly.