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公开(公告)号：JP2002105654A
公开(公告)日：2002-04-10
申请号：JP2000297656
申请日：2000-09-28
Applicant: TOSHIBA CORP
Inventor： SAKUMA HISASHI , SAKAI TADASHI , ONO TOMIO
IPC: H05H1/46 , C23C16/27 , C23C16/511 , H01J9/02 , H01L21/205
Abstract: PROBLEM TO BE SOLVED: To provide a film forming apparatus and a film forming method in which fine-crystalline or amorphous carbon deposited thin film and a diamond deposited thin film are continuously formed. SOLUTION: This deposited film forming apparatus 10 comprises a reaction vessel 11, a gas feed port 18 for feeding raw gas to the reaction vessel 11, an exhaust port for exhausting gas from the reaction vessel 11, a support base 14 to support a substrate 13 in the reaction vessel 11, a magnetic field forming circuit 21a for forming the magnetic field in a space above the substrate 13 in the reaction vessel 11, microwave introducing mechanisms 16 and 17 which are connected to the reaction vessel 11 to introduce microwave in the space with the magnetic field formed therein in the reaction vessel 11, and control mechanisms 31-33 which are connected to the magnetic field forming circuit 21a to control the output to the magnetic field forming circuit 21a so that plasma of raw gas is generated in the space with the magnetic field formed therein and the microwave introduced therein, and the maximum flux density of the magnetic field is below a value at which electronic cyclotron resonance occurs.
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公开(公告)号：JP2000285773A
公开(公告)日：2000-10-13
申请号：JP9336499
申请日：1999-03-31
Applicant: TOSHIBA CORP
Inventor： SAKAI TADASHI , KAMIKAWAJI TORU , TSURUNAGA KAZUYUKI , ONO TOMIO , CHO TOSHI , NAKAYAMA KAZUYA
Abstract: PROBLEM TO BE SOLVED: To improve delay in current interruption by arc in opening and the wear of the surface of an electrode for extending the service life by relatively arranging a first electrode and a second electrode contactable with and separable from the first electrode under reduced pressure, and forming a carbonaceous electron emitting film as the field electron emitting area on both the electrode surfaces. SOLUTION: A fixed electrode and a movable electrode contactable with and separable from it are arranged relatively under the reduced pressure of a vacuum casing, and a carbonaceous thin film that is a field electron emitting layer is formed on a part of both the electrode surfaces by plasma CVD method. As the carbonaceous thin film, a polycrystalline diamond layer reduced in resistance by boron dope to regulate the electron emitting threshold field to about 10 V/μm is used form the viewpoint of the durability to impact in current re- input. According to this, the current is replaced by the field emitting electron current accompanying opening of a pole, and when the electric field is reduced by the separation of the electrodes, the electron emission is quickly settled, and the current can be interrupted without waiting for the current zero point. Thus, generation of arc can be suppressed to extend the service life.
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公开(公告)号：JPH11260246A
公开(公告)日：1999-09-24
申请号：JP6510698
申请日：1998-03-16
Applicant: TOSHIBA CORP
Inventor： SAKAI TADASHI , ONO TOMIO , SAKUMA HISASHI , NAKAYAMA KAZUYA
Abstract: PROBLEM TO BE SOLVED: To obtain a cold cathode array substrate having a high breakdown voltage and a high current density such that plural cold cathode arrays are formed at the same time as the high density in a substrate having a large area, and that non-defectives can be easily selected. SOLUTION: A cold cathode array layer, which is formed by using a semiconductor mold substrate 3, is bonded together with the semiconductor mold substrate 3 to a conductor substrate 1, avoiding the groove part of the conductor substrate 1 on which a groove is wrought. After the conductor substrate 1 has been separated by dicing the groove part, insulating material 12 is filled and the mold substrate 3 is removed. A contact, by which the current of an element is taken out per array from the lower face of the conductor substrate 1, is installed, hereby the arrays are checked individually, and therefore non- defectives can be selected easily and operated. Good arrays are divided individually, as necessary, and the insulating material 12 is filled in the aperture of the arrays, and afterwards gate electrodes of each array are connected in batch by using a thin-film technology, to thereby manufacture with a high yield, a cold cathode array substrate module for power, which has a high breakdown voltage and is operated by with a heavy current.
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公开(公告)号：JPH10261360A
公开(公告)日：1998-09-29
申请号：JP6563897
申请日：1997-03-19
Applicant: TOSHIBA CORP
Inventor： SAKUMA HISASHI , SAKAI TADASHI , ONO TOMIO
Abstract: PROBLEM TO BE SOLVED: To provide a vacuum micro element using diamond on its emitter and a manufacturing method of the micro element. SOLUTION: A vacuum micro element is manufactured by the processes of growing diamond cores 101 on a silicon board 102 as the body emitter, etching the board 102 to a desired depth with the cores 101 used as the mask, forming a gate insulating oxide film layer 103, a gate electrode Mo layer 104 successively and applying a resist, etching the resist until the cores 101 are exposed outside, and etching the electrode layer 104 and the insulating layer 103 with the resist used as the mask to remove the resist.
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公开(公告)号：JPH0973858A
公开(公告)日：1997-03-18
申请号：JP22798995
申请日：1995-09-05
Applicant: TOSHIBA CORP
Inventor： CHO TOSHI , SAKAI TADASHI , ONO TOMIO , YAMAUCHI TAKASHI
Abstract: PROBLEM TO BE SOLVED: To provide a field emitting cold cathode device which can have a broader range of choice of usable materials than conventional ones, enhance the efficiency and uniformity of field emission and the uniformity of energy, and excels in mass-productivity. SOLUTION: AlGaAs layers 102 and GaAs layers 103 are stacked alternately, and a metal (Al) film 104 is formed over one of the cross sections of the layers to form a contact and a substrate. A GaAs high-doped layer 105 is formed at each end, and electrodes are formed on both sides of the layer 105 by vapor deposition of metal (Al) 106.
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Patent Agency Ranking
公开(公告)号：JPH07254367A
公开(公告)日：1995-10-03
申请号：JP4415994
申请日：1994-03-15
Applicant: TOSHIBA CORP
Inventor： NAKAMOTO MASAYUKI , ONO TOMIO
Abstract: PURPOSE:To enhance efficiency, uniformity at the time of arraying, reliability of operation, and durability. CONSTITUTION:A first insulation layer 13 is disposed in a portion except for the tip of a projecting emitter 26 having a sharp end provided in on an emitter member layer 1. A gate electrode layer 21 where a portion surrounding the emitter 26 is formed into a cylindrical tapered shape along the circumferential surface of the emitter is superposed on the insulative layer 13. A second insulative layer 22 is mounted on the gate electrode layer 21. An anode electrode layer 23 where a portion surrounding the emitter 26 is formed into a cylindrical tapered shape along the circumferential surface of the emitter is mounted on the second insulative layer 22. At least the circumferential surfaces of the tips of the cylindrical portions in the gate electrode layer 21 and the anode electrode layer 23 are exposed at a solid angle viewed from the tip of the emitter 26.
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公开(公告)号：JPH07245071A
公开(公告)日：1995-09-19
申请号：JP3514194
申请日：1994-03-07
Applicant: TOSHIBA CORP
Inventor： HIGUCHI TOSHIHARU , NAKAMOTO MASAYUKI , ONO TOMIO , UCHIKOGA SHIYUUICHI , OKUMURA HARUHIKO
Abstract: PURPOSE:To prevent the generation of unnecessary gas, and achieve long life of a display device by installing a getter member to receive electron beams radiated from cathode electrodes on the outer side of a picture element display part. CONSTITUTION:An insulation film 12 having cavities 12a is formed on an Si substrate 11, and a cathode array is formed of cathode electrodes 14 comprising micro-chips on the substrate 11 in the cavities 12a. A getter member 17 is installed on the outer side of a fluorescent screen comprising phosphor 16 formed on a glass plate 15 to receive electron beams radiated from the electrodes 14 without radiating electron beams to the fluorescent screen among the electrodes 14. The electron beams are thus radiated to the member 17 constantly during usage of a display to keep an active condition by its heat, thereby the generation of unnecessary gas is prevented.
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公开(公告)号：JPH07183487A
公开(公告)日：1995-07-21
申请号：JP32441493
申请日：1993-12-22
Applicant: TOSHIBA CORP
Inventor： NAKAMOTO MASAYUKI , ONO TOMIO
Abstract: PURPOSE:To provide a very small vacuum tube corresponding to compactness whose electric field emitting efficiency is high and characteristics are uniform without dispersion by a manufacturing method of high yield and high producibility. CONSTITUTION:An emitter 25 is formed by using a first insulation layer 13 which is formed along accurate configuration of a recessed part 5 and an opening hole 17 formed by a photolithography process such as an an-isotropic etching unlike a conventional rotary deposit method as a prototype and by filling it with a material of an emitter layer 27. Therefore, the emitter 25 can be formed into accurate configuration and size. Furthermore, since an anode 41 is arranged to form an electric field of a short distance linearly to the emitter 25, it is possible to restrain the probability of an electron emitted from a tip of the emitter 25 being trapped by a gate electrode layer 37 and to improve anode-to- emitter current efficiency.
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公开(公告)号：JPH0458769A
公开(公告)日：1992-02-25
申请号：JP16560490
申请日：1990-06-26
Applicant: TOSHIBA CORP
Inventor： ONO TOMIO
Abstract: PURPOSE:To facilitate positioning at the time of fixing of a bimorph piezoelectric displacement element by eliminating bending displacement caused under elongation mode thereby taking out only rotation around one axis based on torsional displacement. CONSTITUTION:A piezoelectric micro rotation device comprises two bimorph piezoelectric displacement elements (hereinafter, referred to bimorph) 111, 112 where two LN stripes 121, 122 are bonded through a thin metallic board 13, or each displacement direction of the piezoelectric displacement element is selected, or the cutting direction of a piezoelectric crystal board is selected. Upon application of a voltage on two bimorphs, torsional displacement of bimorph causes rotation of a mirror 17 around the longitudinal direction of bimorph. When the bending displacement of bimorph is set, in its polarity, such that a driven body is displaced in same direction, rotation only around one axis can be produced through torsional displacement without causing bending displacement at the free end of the bimorph.
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公开(公告)号：JPH03112373A
公开(公告)日：1991-05-13
申请号：JP24496789
申请日：1989-09-22
Applicant: TOSHIBA CORP
Inventor： KONDO TAKESHI , ONO TOMIO , YAMAMOTO NORIKO
Abstract: PURPOSE:To obtain a displacement generating device having simple structure and producing a large displacement by applying a constant voltage lower than the resisting field of a piezoelectric body having bimorph structure onto the plus side electrode, out of two electrodes sandwiching the piezoelectric body, and applying a constant voltage higher than the resisting field onto the minus side electrode. CONSTITUTION:Electrodes are taken out from three points; a drive electrode 2-2 sandwiched by piezoelectric boards 1-1, 2; an electrode 2-1 having polarizing direction on the plus side main face; an electrode 2-3 formed on the minus side main face. Output terminal of an amplifier 3 is connected to the drive electrode 2-2, while constant voltages +V0 and -V0 are connected through constant voltage source 4-1, 2 to the electrodes 2-1, 2-3 at the outside of the piezoelectric boards 1-1, 1-2 respectively. The constant voltage V0 is set lower than the resisting field of the piezoelectric material composing the piezoelectric boards 1-1, 2. By such arrangement, the driving voltage can be double and only one drive amplifier 3 is required.
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