公开(公告)号：US20230004357A1

公开(公告)日：2023-01-05

申请号：US17779834

申请日：2020-11-13

Applicant: TSINGHUA UNIVERSITY

Inventor： Huaqiang WU ,  Bohan LIN ,  Bin GAO ,  Jianshi TANG ,  He QIAN

IPC: G06F7/58

Abstract: A method for generating a random number and a random number generator are provided. The method for generating a random number includes: performing n writing operations on at least one analog resistive random access memory, where each of the n writing operations includes applying at least one writing operation pulse to change a conductance value of an operated analog resistive access memory; and generating the random number based on n writing operation pulse numbers respectively corresponding to the n writing operations, where n is a positive integer. The method for generating a random number generates random numbers based on the analog characteristics of the analog resistive random access memory, the generated random number does not need back-end correction, and have both high speed and high reliability.

公开(公告)号：US20220335278A1

公开(公告)日：2022-10-20

申请号：US17049348

申请日：2020-01-10

Applicant: TSINGHUA UNIVERSITY

Inventor： Huaqiang WU ,  Peng YAO ,  Bin GAO ,  He QIAN

IPC: G06N3/063 ,  G06F9/345 ,  G06F9/38 ,  G06F9/30

Abstract: Disclosed are a parallel acceleration method for a memristor-based neural network, a parallel acceleration processor based on a memristor-based neural network and a parallel acceleration device based on a memristor-based neural network. The neural network includes a plurality of functional layers sequentially provided, wherein the plurality of functional layers include a first functional layer and a second functional layer following the first functional layer, the first functional layer includes a plurality of first memristor arrays in parallel, and the plurality of first memristor arrays are configured to execute an operation of the first functional layer in parallel and to output a result of the operation to the second functional layer. The parallel acceleration method includes: executing the operation of the first functional layer in parallel via the plurality of first memristor arrays and outputting the result of the operation to the second functional layer.

公开(公告)号：US20220207338A1

公开(公告)日：2022-06-30

申请号：US17560801

申请日：2021-12-23

Applicant: TSINGHUA UNIVERSITY

Inventor： Xinyi LI ,  Huaqiang WU ,  He QIAN ,  Dong WU

IPC: G06N3/063 ,  G06N3/04

Abstract: A neuron simulation circuit and a neural network apparatus. The neuron simulation circuit includes an operational amplifier, a first resistive device and a second resistive device. The operational amplifier includes a first input terminal, a second input terminal, and an output terminal. The first resistive device is connected between the first input terminal or the second input terminal of the operational amplifier and the output terminal of the operational amplifier. The second resistive device is connected between the output terminal of the operational amplifier and an output terminal of the neuron simulation circuit. The second resistive device includes a threshold switching memristor, and a first terminal of the threshold switching memristor is electrically connected with the output terminal of the neuron simulation circuit. At least one of the first resistive device and the second resistive device includes a dynamic memristor.

公开(公告)号：US20220093855A1

公开(公告)日：2022-03-24

申请号：US17477119

申请日：2021-09-16

Applicant: TSINGHUA UNIVERSITY

Inventor： Huaqiang WU ,  He QIAN ,  Xinyi LI

IPC: H01L45/00 ,  H01L27/24

Abstract: A memristor and a preparation method thereof are provided. The memristor includes at least one memristive unit, each of the at least one memristive unit includes a transistor and at least one memristive component, the transistor includes a source electrode and a drain electrode; and each of the at least one memristive component includes a first electrode, a resistive layer, a second electrode, and a passivation layer, the first electrode is electrically connected with the source electrode or the drain electrode; the resistive layer is provided between the first electrode and the second electrode; and the passivation layer at least covers a sidewall of the resistive layer.

公开(公告)号：US20160118586A1

公开(公告)日：2016-04-28

申请号：US14894502

申请日：2014-05-28

Applicant: TSINGHUA UNIVERSITY

Inventor： Huaqiang WU ,  Minghao WU ,  Yue BAI ,  He QIAN

IPC: H01L45/00

CPC classification number: H01L45/1633 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

Abstract: A method for forming a stacked structure includes steps of: providing a first layer; oxidizing at least a part of the first layer to form a first oxide layer on the first layer; forming a second layer on the first oxide layer; and forming a second oxide layer between the first oxide layer and the second layer by rapid thermal annealing.

Abstract translation: 一种形成层叠结构的方法包括以下步骤：提供第一层; 氧化所述第一层的至少一部分以在所述第一层上形成第一氧化物层; 在所述第一氧化物层上形成第二层; 以及通过快速热退火在所述第一氧化物层和所述第二层之间形成第二氧化物层。

公开(公告)号：US20160108521A1

公开(公告)日：2016-04-21

申请号：US14740359

申请日：2015-06-16

Applicant: Tsinghua University

Inventor： Huaqiang WU ,  Shuoguo YUAN ,  Han LI ,  He QIAN

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/22 ,  H01J1/304

CPC classification number: H01J1/304 ,  C23C16/305 ,  C23C16/4488 ,  C23C16/45523 ,  H01J9/025 ,  H01J2201/30449

Abstract: The present disclosure relates to a method for preparing a molybdenum disulfide film used in a field emission device, including: providing a sulfur vapor; blowing the sulfur vapor into a reaction chamber having a substrate and MoO3 powder to generate a gaseous MoOx; feeding the sulfur vapor into the reaction chamber sequentially, heating the reaction chamber to a predetermined reaction temperature and maintaining for a predetermined reaction time, and then cooling the reaction chamber to a room temperature and maintaining for a second reaction time to form a molybdenum disulfide film on the surface of the substrate, in which the molybdenum disulfide film grows horizontally and then grows vertically. The method according to the present disclosure is simple and easy, and the field emission property of the MoS2 film obtained is good.

Abstract translation: 本公开涉及一种制备用于场致发射装置的二硫化钼膜的方法，包括：提供硫蒸汽; 将硫蒸气吹入具有基底和MoO 3粉末的反应室中以产生气态MoO x; 将硫蒸气依次进料到反应室中，将反应室加热至预定的反应温度并保持预定的反应时间，然后将反应室冷却至室温并保持第二反应时间以形成二硫化钼膜 在其中二硫化钼膜水平生长然后垂直生长的基底表面上。 根据本公开的方法简单易行，并且所获得的MoS2膜的场发射性能良好。

公开(公告)号：US20250095728A1

公开(公告)日：2025-03-20

申请号：US18580872

申请日：2021-12-13

Applicant: TSINGHUA UNIVERSITY

Inventor： Bin GAO ,  Peng YAO ,  Huaqiang WU ,  Jianshi TANG ,  He QIAN

IPC: G11C13/00

Abstract: A computing apparatus and a robustness processing method thereof. The robustness processing method includes: based on model parameters of a target algorithm model, obtaining a mapping relationship between the model parameters and the first computing memristor array; based on an influence factor that determines a critical weight device, determining a way to obtain a weight criticality of the plurality of memristor devices from the influence factor; obtaining an input set of the algorithm model, and determining a criticality value for each of the plurality of memristor devices according to the way; determining a critical weight device among the plurality of memristor devices according to the criticality value for each of the plurality of memristor devices; and based on the critical weight device, performing an optimization processing on the first processing unit.

公开(公告)号：US20220277866A1

公开(公告)日：2022-09-01

申请号：US17747906

申请日：2022-05-18

Applicant: Tsinghua University ,  Tencent Technology (Shenzhen) Company Limited

Inventor： Jianshi TANG ,  Zhenxuan ZHAO ,  Yuan DAI ,  Wangwei LEE ,  Zhengyou ZHANG ,  Jian YUAN ,  Huaqiang WU ,  He QIAN ,  Bin GAO

IPC: H01B1/24 ,  C08K3/04 ,  C09D5/24 ,  C09D7/61 ,  C09D7/40 ,  C09D175/04

Abstract: This application discloses a conductive paste, a preparation method thereof, and a preparation method of a conductive film using the conductive paste. The conductive paste comprises: a thermoplastic polyurethane, conductive particles, and an organic solvent, the thermoplastic polyurethane and the conductive particles being proportionally mixed in the organic solvent, and the thermoplastic polyurethane being dispersed in the form of particles among the conductive particles. A thermoplastic polyurethane elastomer is used as a binder, and the conductive particles are mixed in the organic solvent containing the thermoplastic polyurethane elastomer. The conductive particles ensure the conductivity of the conductive film prepared using the conductive paste. The thermoplastic polyurethane has strong adhesion ability, and is suitable for use on the surface of most substrates, to form a conductive film with good adhesion and no cracking.

公开(公告)号：US20220137941A1

公开(公告)日：2022-05-05

申请号：US17517096

申请日：2021-11-02

Applicant: TSINGHUA UNIVERSITY

Inventor： Huaqiang WU ,  Ruihua YU ,  Yilong GUO ,  Jianshi TANG ,  Bin GAO ,  He QIAN

IPC: G06F8/41 ,  G06N3/10 ,  G06F17/16

Abstract: A compilation method, a compilation apparatus suitable for an In-Memory Computing apparatus, a computing device and a storage medium. The compilation method includes: acquiring calculation information of an algorithm to be compiled; converting the algorithm to be compiled into the first intermediate representation according to the calculation information; mapping the first intermediate representation to the second intermediate representation; and compiling the algorithm to be compiled into instruction information recognized by the In-Memory Computing apparatus according to the hardware information, to make the In-Memory Computing apparatus execute the instruction information. The compilation method may compile the calculation information into instructions that may be directly executed by the In-Memory Computing apparatus, so as to realize the effect of accelerating the operations of various algorithms by using the In-Memory Computing apparatus.

公开(公告)号：US20160072062A1

公开(公告)日：2016-03-10

申请号：US14758463

申请日：2014-05-27

Applicant: TSINGHUA UNIVERSITY

Inventor： Huaqiang WU ,  Yue BAI ,  Minghao WU ,  He QIAN

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1633

Abstract: An Al-W-O stack structure applicable to a resistive random access memory according to an embodiment of the invention comprises a tungsten top electrode, a tungsten oxide layer formed on the tungsten lower electrode, an aluminum oxide layer formed on the tungsten oxide layer and an aluminum top electrode formed on the aluminum oxide layer. The invention utilizes the different properties of two metals, namely aluminum and tungsten in bonding with oxygen ions, to obtain a resistive random access memory with more stable performances, lower power consumption and larger high resistance-low resistance ratio.

Abstract translation: 根据本发明实施例的适用于电阻随机存取存储器的Al-WO堆叠结构包括钨顶电极，形成在钨下电极上的氧化钨层，形成在氧化钨层上的氧化铝层和铝 顶部电极形成在氧化铝层上。 本发明利用两种金属（即铝和钨）与氧离子结合的不同性质，以获得具有更稳定性能，更低功耗和更高的高电阻 - 低电阻比的电阻随机存取存储器。