公开(公告)号：US20250149392A1

公开(公告)日：2025-05-08

申请号：US18395755

申请日：2023-12-26

Applicant: Unimicron Technology Corp.

Inventor： Chia Ching Wang ,  Chien-Chou Chen ,  Hsuan Ming Hsu ,  Ho-Shing Lee ,  Yunn-Tzu Yu ,  Yao Yu Chiang ,  Po-Wei Chen ,  Wei-Ti Lin ,  Wen Chi Chang

IPC: H01L23/12 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

Abstract: A package substrate includes a core layer, at least one functional component, at least one spacer, a filler, a first and a second build-up structures. The core layer has at least one opening and multiple conductive through vias. The functional component is disposed in the openings. The spacer is disposed on the functional component. The filler is filled in the opening, covering the functional component and spacer, and completely filling the gap between the opening, the functional component and the spacer. The first build-up structure is disposed on a first surface of the core layer and a third surface of the filler, and electrically connected to the functional component and the conductive through vias. The second build-up structure is disposed on a second surface of the core layer and a fourth surface of the filler, contacts the spacer and electrically connected to the conductive through vias.

公开(公告)号：US11251350B2

公开(公告)日：2022-02-15

申请号：US16281108

申请日：2019-02-21

Applicant: Unimicron Technology Corp.

Inventor： Yi-Cheng Lin ,  Yu-Hua Chen ,  Chun-Hsien Chien ,  Chien-Chou Chen ,  Cheng-Hui Wu

IPC: H01L33/62 ,  H01L33/52 ,  H01L23/538 ,  H01L23/498 ,  H01L23/31

Abstract: A light-emitting diode package including a carrier structure, a patterned conductive layer, at least one chip, a dielectric layer, at least one first conductive via, a build-up circuit structure, and at least one light-emitting diode is provided. The patterned conductive layer is disposed on the carrier structure. The chip is disposed on the carrier structure. The dielectric layer is disposed on the carrier structure and encapsulates the chip and the patterned conductive layer. The first conductive via penetrates the dielectric layer and is electrically connected to the patterned conductive layer. The build-up circuit structure is disposed on the dielectric layer and electrically connected to the first conductive via. The light-emitting diode is disposed on the build-up circuit structure.

公开(公告)号：US10950687B2

公开(公告)日：2021-03-16

申请号：US16874691

申请日：2020-05-15

Applicant: Unimicron Technology Corp.

Inventor： Yu-Hua Chen ,  Fu-Yang Chen ,  Chun-Hsien Chien ,  Chien-Chou Chen ,  Wei-Ti Lin

IPC: H01L23/522 ,  H01L23/532 ,  H01L23/15 ,  H01L49/02 ,  H01L23/498

Abstract: A manufacturing method of a substrate structure includes the following steps. A first build-up circuit structure is formed. At least one copper pillar is formed on the first build-up circuit structure. A dielectric layer is formed on the first build-up circuit structure, and the dielectric layer wraps the copper pillar. A second build-up circuit structure and a capacitive element are formed on the dielectric layer. In particular, the second build-up circuit structure and the first build-up circuit structure are respectively located at two opposite sides of the dielectric layer. The capacitive element is disposed in a capacitive element setting region within the second build-up circuit structure. The copper pillar penetrates the dielectric layer and is electrically connected to the second build-up circuit structure and the first build-up circuit structure.

公开(公告)号：US20210076508A1

公开(公告)日：2021-03-11

申请号：US16950910

申请日：2020-11-18

Applicant: Unimicron Technology Corp.

Inventor： Wei-Ti Lin ,  Chun-Hsien Chien ,  Chien-Chou Chen ,  Fu-Yang Chen ,  Ra-Min Tain

IPC: H05K3/46 ,  H05K3/40 ,  H05K3/42 ,  H05K3/28 ,  H05K3/30 ,  H05K1/11 ,  H05K1/18 ,  H05K3/00

Abstract: A circuit carrier board structure includes a first substrate, a second substrate, an adhesive layer, and a plurality of contact pads. The first substrate includes a first surface and a second surface, and also includes a plurality of first build-up layers sequentially stacked. The first build-up layers include a first dielectric layer and a first circuit layer. The second substrate includes a third surface and a fourth surface, and also includes a plurality of second build-up layers sequentially stacked. The second build-up layers include a second dielectric layer and a second circuit layer. The second surface is combined to the third surface. The connection pads are on the first surface and electrically connected to the first circuit layer. The first substrate is electrically connected to the second substrate. A manufacturing method of the circuit carrier board structure is also provided.

公开(公告)号：US10888001B2

公开(公告)日：2021-01-05

申请号：US16244113

申请日：2019-01-10

Applicant: Unimicron Technology Corp.

Inventor： Wei-Ti Lin ,  Chun-Hsien Chien ,  Chien-Chou Chen ,  Fu-Yang Chen ,  Ra-Min Tain

IPC: H05K7/10 ,  H05K3/46 ,  H05K3/40 ,  H05K3/42 ,  H05K3/28 ,  H05K3/30 ,  H05K1/11 ,  H05K1/18 ,  H05K3/00

Abstract: A circuit carrier board structure includes a first substrate, a second substrate, an adhesive layer, and a plurality of contact pads. The first substrate includes a first surface and a second surface, and also includes a plurality of first build-up layers sequentially stacked. The first build-up layers include a first dielectric layer and a first circuit layer. The second substrate includes a third surface and a fourth surface, and also includes a plurality of second build-up layers sequentially stacked. The second build-up layers include a second dielectric layer and a second circuit layer. The second surface is combined to the third surface. The connection pads are on the first surface and electrically connected to the first circuit layer. The first substrate is electrically connected to the second substrate. A manufacturing method of the circuit carrier board structure is also provided.

公开(公告)号：US20200273948A1

公开(公告)日：2020-08-27

申请号：US16874691

申请日：2020-05-15

Applicant: Unimicron Technology Corp.

Inventor： Yu-Hua Chen ,  Fu-Yang Chen ,  Chun-Hsien Chien ,  Chien-Chou Chen ,  Wei-Ti Lin

IPC: H01L49/02 ,  H01L23/522 ,  H01L23/498 ,  H01L23/532 ,  H01L23/15

Abstract: A manufacturing method of a substrate structure includes the following steps. A first build-up circuit structure is formed. At least one copper pillar is formed on the first build-up circuit structure. A dielectric layer is formed on the first build-up circuit structure, and the dielectric layer wraps the copper pillar. A second build-up circuit structure and a capacitive element are formed on the dielectric layer. In particular, the second build-up circuit structure and the first build-up circuit structure are respectively located at two opposite sides of the dielectric layer. The capacitive element is disposed in a capacitive element setting region within the second build-up circuit structure. The copper pillar penetrates the dielectric layer and is electrically connected to the second build-up circuit structure and the first build-up circuit structure.

公开(公告)号：US10700161B2

公开(公告)日：2020-06-30

申请号：US16159726

申请日：2018-10-15

Applicant: Unimicron Technology Corp.

Inventor： Yu-Hua Chen ,  Fu-Yang Chen ,  Chun-Hsien Chien ,  Chien-Chou Chen ,  Wei-Ti Lin

IPC: H01L49/02 ,  H01L23/522 ,  H01L23/498 ,  H01L23/15 ,  H01L23/532

Abstract: A manufacturing method of a substrate structure includes the following steps. A first build-up circuit structure is formed. At least one copper pillar is formed on the first build-up circuit structure. A dielectric layer is formed on the first build-up circuit structure, and the dielectric layer wraps the copper pillar. A second build-up circuit structure and a capacitive element are formed on the dielectric layer. In particular, the second build-up circuit structure and the first build-up circuit structure are respectively located at two opposite sides of the dielectric layer. The capacitive element is disposed in a capacitive element setting region within the second build-up circuit structure. The copper pillar penetrates the dielectric layer and is electrically connected to the second build-up circuit structure and the first build-up circuit structure. A substrate structure obtained by the manufacturing method of the substrate structure is provided.

公开(公告)号：US10461146B1

公开(公告)日：2019-10-29

申请号：US16151351

申请日：2018-10-04

Applicant: Unimicron Technology Corp.

Inventor： Wen-Liang Yeh ,  Chun-Hsien Chien ,  Chien-Chou Chen ,  Cheng-Hui Wu

IPC: H01L21/02 ,  H01L49/02 ,  H01L23/00 ,  H01L23/522

Abstract: A package structure includes a substrate, a metal-insulator-metal capacitor, a circuit redistribution structure, and a chip. The metal-insulator-metal capacitor is disposed over the substrate and includes a first electrode, a second electrode, and an insulating layer. The circuit redistribution structure is disposed over the metal-insulator-metal capacitor and includes a first circuit redistribution layer and a second circuit redistribution layer. The first circuit redistribution layer includes a first wire electrically connected to the first electrode and a second wire electrically connected to the second electrode. The second circuit redistribution layer is disposed on the first circuit redistribution layer and includes a third wire electrically connected to the first wire and a fourth wire electrically connected to the second wire. The chip is disposed over the circuit redistribution structure and electrically connected to the third wire and the fourth wire.