BLUE VERTICAL CAVITY SURFACE-EMITTING LASER

    公开(公告)号:JPH11340582A

    公开(公告)日:1999-12-10

    申请号:JP12519899

    申请日:1999-04-30

    Applicant: XEROX CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a structure of a monolithic vertical cavity surface-emitting laser which emits spectral light of wavelength in the range of 390 to 430 nm (blue range) and is independently addressable. SOLUTION: In a laser structure 200 being composed almost exclusively of gallium nitride, a laser heterostructure 230 is formed on a terminal 216 of an n-GaN layer 210. Laser is emitted from a quantum well active layer 222. The n-GaN layer 210 is grown epitaxially laterally on a DBR 206 and since this is a region with few crystal defects, a blue spectral vertical cavity surface H emitting laser can be emitted with high efficiency to be emitted.

    PRINT HEAD FOR BALLISTIC AEROSOL PRINTER

    公开(公告)号:JP2000108339A

    公开(公告)日:2000-04-18

    申请号:JP26928899

    申请日:1999-09-22

    Applicant: XEROX CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a print head for high quality high speed printing. SOLUTION: In a print head 34 for printer, propellant flows through a channel toward a material 38 to be printed and a printing substance, e.g. ink or toner, is introduced into the propellant while being regulated and kinetic energy sufficient for reaching the material 38 to be printed is imparted to the printing substance. High speed high resolution printing is realized by means of a plurality of channels for directing the propellant and the printing substance. Before being introduced the channel and printed onto the material 38 to be printed, a plurality of printing substances are not mixed in the channel or registered again but mixed or superposed on the material 38 to be printed.

    OXIDATION CONTROL METHOD FOR MULTILAYER SEMICONDUCTOR STRUCTURE

    公开(公告)号:JPH10163194A

    公开(公告)日:1998-06-19

    申请号:JP32327697

    申请日:1997-11-25

    Applicant: XEROX CORP

    Abstract: PROBLEM TO BE SOLVED: To demarcate the boundary of an oxidation area parallel to a substrate and demarcate and control the area to be oxidated of a semiconductor hetero structure, by arranging an AlAs layer between two AlGaAs layers poor in aluminum content. SOLUTION: After sticking of an AlGaA layer 102, a layer rich in aluminum content such as an AlAs layer 104 is made. This AlAs layer 104 has silicon doping of generally 5×10 cm or larger than this, and this gives an impurity source for irregularization of the layer. Here, the AlAS layer 104 is used, but an AlGaAs layer richer in aluminum content than the aluminum content of adjacent AlGaAs layers 102 and 106 can also be used. Generally, molar fraction of about 90% or larger than that is used to the layer rich in aluminum content.

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