Abstract:
Provided is an infrared sensor which is capable of measuring a temperature of an object to be measured with high accuracy even when lead wires are connected to one side thereof. The infrared sensor includes an insulating film; a first and a second heat sensitive element which are provided on one face of the insulating film; a first and a second wiring film that are respectively connected to the first and the second heat sensitive element; an infrared reflecting film; a plurality of terminal electrodes; and a thermal resistance adjusting film which is provided on the other face of the insulating film, is in opposition to at least a portion of the longer one of the first or the second wiring film in wiring distance from the terminal electrodes, and is formed of a material with greater heat dissipation than the insulating film.
Abstract:
An optical component packaging structure is provided. The optical component packaging structure includes a substrate, a far-infrared sensor chip, a metal covering cap and a light filter. The far-infrared sensor chip is disposed on the substrate and electrically connected to the substrate. The metal covering cap is disposed on the substrate and accommodating the far-infrared sensor chip. The metal covering cap has an opening exposing the far-infrared sensor chip. The light filter is disposed out of the opening and on the inner surface for covering the opening to filter the far-infrared light passing through. The far-infrared sensor chip is surrounded by the metal covering cap, the substrate and the light filter, and the metal covering cap is directly connected with the substrate.
Abstract:
Each of first and second beams has a connection portion connected to a base substrate and a separated portion away from the base substrate, and is physically joined to an infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams, and includes lower electrode, upper electrode, and a resistance change film. The resistance change film is sandwiched by the lower electrode and upper electrode in a thickness direction, each of the lower and upper electrodes is electrically connected to the resistance change film, the lower and upper electrodes are electrically connected to first wiring and second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and an infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver.
Abstract:
A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material.
Abstract:
Die Erfindung betrifft einen Strahlungssensoranordnung (21), umfassend einen Strahlungssensor (2), umfassend ein freitragendes Element (5), welches einen optischen Absorber (6) und eine Widerstandsstruktur (3) umfasst und eine Haltestruktur (4), welche das freitragende Element (5) in einem Abstand zu einem Substrat (1) hält und welche eine Verbindung zwischen dem freitragenden Element (5) und dem Substrat (1) darstellt, sowie eine Auswerteeinheit zur Ermittlung einer absorbierten Strahlung aus der Änderung eines elektrischen Widerstands der Widerstandsstruktur (3) gekennzeichnet durch eine wellenlängenselektive Auslegung des optischen Absorbers (6).
Abstract:
PROBLEM TO BE SOLVED: To provide an infrared sensor capable of measuring a temperature of a measuring object with high accuracy without losing a heat balance even if lead wire is coupled to one side.SOLUTION: An infrared sensor includes: an insulation film 2; a first heat sensitive element 3A and a second heat sensitive element 3B, each provided on one side of the insulation film; a first wiring film 4A coupled to the first heat sensitive element and a second wiring film 4B coupled to the second heat sensitive element, each provided on the one side of the insulation film; an infrared reflection film 5 provided on the other side of the insulation film opposite to the second heat sensitive element; a plurality of terminal electrodes 6 provided at a same end of the insulation film and coupled to the corresponding first wiring film and second wiring film; and heat resistance adjustment film 7 provided on the other side of the insulation film, arranged opposite to at least part of the first wiring film or the second wiring film having a longer wiring distance from a terminal electrode and made of a material having higher heat dissipation property than the insulation film.
Abstract:
Provided is an infrared sensor which is capable of measuring a temperature of an object to be measured with high accuracy even when lead wires are connected to one side thereof. The infrared sensor includes an insulating film; a first and a second heat sensitive element which are provided on one face of the insulating film; a first and a second wiring film that are respectively connected to the first and the second heat sensitive element; an infrared reflecting film; a plurality of terminal electrodes; and a thermal resistance adjusting film which is provided on the other face of the insulating film, is in opposition to at least a portion of the longer one of the first or the second wiring film in wiring distance from the terminal electrodes, and is formed of a material with greater heat dissipation than the insulating film.