公开(公告)号：WO99030348A1

公开(公告)日：1999-06-17

申请号：PCT/US1998/025820

申请日：1998-12-04

IPC: H01J40/06 ,  G03F7/20 ,  H01J3/02 ,  H01J27/04 ,  H01J37/073 ,  H01J37/075 ,  H01J40/16

CPC classification number: G03F7/70375 ,  H01J3/021 ,  H01J27/04 ,  H01J37/073 ,  H01J37/075 ,  H01J40/16 ,  H01J2201/3423 ,  H01J2237/06333 ,  H01J2237/31779

Abstract: An electron source includes a negative electron affinity photocathode (10) on a light-transmissive substrate (12) and a light beam generator (50) for directing a light beam (22) through the substrate (12) at the photocathode (10) for exciting electrons into the conduction band. The photocathode (10) has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electrons source further includes electron optics (32, 66) for forming the electrons into an electron beam (30) and a vacuum enclosure (14, 62) for maintaining the photocathode (10) at high vacuum. The photocathode (10) is patterned to define emission areas. A patterned mask may be located on the emission surface of the active layer, may be buried within the active layer or may be located between the active layer and the substrate (12).

Abstract translation: 电子源包括在透光基板（12）上的负电子亲和光电阴极（10）和用于在光电阴极（10）处引导光束（22）穿过基板（12）的光束发生器（50），用于 激发电子进入导带。 光电阴极（10）具有用于发射尺寸小于约两微米的电子的至少一个有效面积。 电子源还包括用于将电子形成电子束（30）的电子光学器件（32,66）和用于将光电阴极（10）保持在高真空度的真空外壳（14,62）。 图案化光电阴极（10）以限定发射区域。 图案化掩模可以位于有源层的发射表面上，可以被掩埋在有源层内或者可以位于有源层和衬底（12）之间。

公开(公告)号：WO99004413A1

公开(公告)日：1999-01-28

申请号：PCT/US1998/015117

申请日：1998-07-15

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/14 ,  H01J43/00 ,  H01L31/18

CPC classification number: H01J31/506 ,  H01J1/34 ,  H01J29/38 ,  H01J2201/3423

Abstract: A night vision device (10) includes an image intensifier tube (14) which includes a photocathode (22) responsive both to white light and to infrared light to release photoelectrons. The photocathode (22) is particularly sensitive to infrared light at the 980 nm wavelength, and has desirable spectral response characteristics.

Abstract translation: 夜视装置（10）包括图像增强管（14），其包括响应白光和红外光以释放光电子的光电阴极（22）。 光电阴极（22）对980nm波长的红外光特别敏感，具有期望的光谱响应特性。

公开(公告)号：WO2016187603A1

公开(公告)日：2016-11-24

申请号：PCT/US2016/033669

申请日：2016-05-21

Applicant: KLA-TENCOR CORPORATION

Inventor： CHUANG, Yung-Ho ,  FIELDEN, John ,  XIAOLI, Yinying ,  LIU, Xuefeng

IPC: H01J31/50 ,  H01J29/38 ,  H01J31/26 ,  H01J1/34 ,  G02B21/12 ,  H01L27/146 ,  H01L27/148

CPC classification number: H01J1/308 ,  H01J1/3044 ,  H01J1/34 ,  H01J2201/3423 ,  H01L27/14831 ,  H01L31/105 ,  H01L31/107

Abstract: A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems.

Abstract translation: 光电阴极利用整体形成在硅衬底上的场致发射阵列（FEA）来增强光电子发射，以及直接设置在FEA的输出表面上以防止氧化的薄硼层。 场发射体由具有以二维周期性图案设置的各种形状（例如，金字塔形或圆形晶须）的突起形成，并且可以被配置为以反向偏压模式操作。 提供可选的栅极层以控制发射电流。 在照明（顶部）表面上形成可选的第二硼层，并且在第二硼层上形成任选的抗反射材料层。 在相对的照明​​和输出表面之间产生可选的外部电位。 通过特殊的掺杂方案和施加外部电位形成n型硅场致发射体和p-i-n光电二极管膜的可选组合。 光电阴极形成传感器和检测系统的一部分。

公开(公告)号：WO98054750A1

公开(公告)日：1998-12-03

申请号：PCT/US1998/008366

申请日：1998-04-23

IPC: H01J37/06 ,  G03F7/20 ,  H01J1/34 ,  H01J3/02 ,  H01J7/18 ,  H01J27/04 ,  H01J37/073 ,  H01J40/06

CPC classification number: G03F7/70375 ,  H01J3/021 ,  H01J27/04 ,  H01J37/073 ,  H01J2201/3423 ,  H01J2237/045 ,  H01J2237/06333 ,  H01J2237/28 ,  H01J2237/31754

Abstract: An electron beam source includes a cathode (200) having an electron emission surface including an active area (208) for emission of electrons and a cathode shield assembly (220) including a conductive shield disposed in proximity to the electron emission surface of the cathode. The shield has an opening (222) aligned with the active area. The electron beam source further includes a device for stimulating emission of electrons from the active area of the cathode (200), electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the cathode at high vacuum. The cathode (200) may be a negative electron affinity photocathode formed on a light-transmissive substrate (202). The shield protects non-emitting areas of the emission surface from contamination and inhibits cathode materials from contaminating components of the electron beam source. The cathode (200) may be moved relative to the opening (222) in the shield so as to align a new active area with the opening. Getter materials and sources of activation material may be incorporated into the shield assembly.

Abstract translation: 电子束源包括具有电子发射表面的阴极（200），该电子发射表面包括用于发射电子的有源区（208）和阴极屏蔽组件（220），阴极屏蔽组件包括设置在阴极的电子发射表面附近的导电屏蔽。 屏蔽件具有与活动区域对准的开口（222）。 电子束源还包括用于刺激从阴极（200）的有源区域发射电子的装置，用于将电子形成电子束的电子光学器件和用于将阴极保持在高真空的真空外壳。 阴极（200）可以是形成在透光性基板（202）上的负电子亲和光电阴极。 屏蔽保护发射表面的不发射区域免受污染，并且抑制阴极材料污染电子束源的部件。 阴极（200）可以相对于屏蔽件中的开口（222）移动，以便将新的有效区域与开口对准。 吸气剂材料和活化材料源可以并入屏蔽组件中。

公开(公告)号：WO1997044805A1

公开(公告)日：1997-11-27

申请号：PCT/US1997008727

申请日：1997-05-20

Applicant: SCHWARTZ, Ansel, M. ,  MAKO, Frederick, M. ,  FISHER, Amnon

Inventor： SCHWARTZ, Ansel, M.

IPC: H01J23/06

CPC classification number: H01J3/023 ,  H01J23/06 ,  H01J2201/3423

Abstract: The present invention pertains to an electron gun that generates an electron flow to produce r.f. energy therefrom. The electron gun (10) comprises an electrostatic cavity (12) having a first stage (14) with emitting faces (16) and multiple stages with emitting sections (18). The electron gun (10) also includes an electrostatic force generating mechanism (15) which encompasses the emitting faces (16) and the multiple emitting sections (18) such that electrons directed from the emitting faces (16) contact the emitting sections (18) so that additional electrons are emitted therefrom. Moreover, a method of producing electrons using this invention is described.

Abstract translation: 本发明涉及产生电子流以产生r.f的电子枪。 能量。 电子枪（10）包括具有发射面（16）的第一级（14）和具有发射部分（18）的多级的静电腔（12）。 电子枪（10）还包括一个静电力产生机构（15），其包围发射面（16）和多个发射部分（18），使得从发射面（16）引导的电子接触发射部分（18） 从而从其发射附加电子。 此外，描述使用本发明产生电子的方法。

公开(公告)号：KR1020010032947A

公开(公告)日：2001-04-25

申请号：KR1020007006292

申请日：1998-12-04

Applicant: 인테벡, 인코포레이티드 ,  더 보드 오브 트러스티스 오브 더 리랜드 스탠포드 주니어 유니버시티

Inventor： 슈나이더,제임스,이. ,  코스텔로,케네쓰,에이. ,  멕코드,마크,에이. ,  피스,알.,페이비언 ,  바움,아론,더블유.

IPC: H01J40/06

CPC classification number: G03F7/70375 ,  H01J3/021 ,  H01J27/04 ,  H01J37/073 ,  H01J37/075 ,  H01J40/16 ,  H01J2201/3423 ,  H01J2237/06333 ,  H01J2237/31779

Abstract: 본발명은전자소스가광 투과성기판(12) 상의음 전자친화성광전음극(10)과, 광전음극의전도대로전자를여기시키기위해광 투과성기판(12)을통해광전음극(10)으로광 빔을향하게하는광 빔발생기(50)를포함하는것에관한것이다. 광전음극(10)은전자를방출시키기위하여 2 마이크로미터이하의크기를갖는적어도하나의활성영역을포함한다. 전자소스는광전음극으로부터방출된전자를전자빔(30)으로형성하기위한전자광학부(32, 66)와매우높은진공도로광전음극(10)을유지하기위한진공밀폐부(14, 62)를더 포함한다. 광전음극(10)은방출영역을한정하기위해패턴화된다. 패턴화된마스크는활성층의방출표면상에위치하거나, 활성층내에매입되거나활성층과기판(12) 사이에위치할수 있다.

公开(公告)号：WO01052297A1

公开(公告)日：2001-07-19

申请号：PCT/JP2001/000088

申请日：2001-01-11

IPC: H01J9/12 ,  G01J1/02 ,  H01J1/34 ,  H01J40/06 ,  H01L31/09 ,  H01J1/78 ,  H01J9/233

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photoemissive surface (10) includes a p-type silicon substrate (11), a porous silicon area (12) formed on the p-type silicon substrate (11), an Au electrode (13) formed on the porous silicon area (12), and an ohmic electrode (14) formed on the p-type silicon substrate (11) on the opposite side of the porous silicon area (12). The photoemissive surface consists of a p-type silicon substrate including a porous silicon area of a new material.

Abstract translation: 发光表面（10）包括p型硅衬底（11），形成在p型硅衬底（11）上的多孔硅区域（12），形成在多孔硅区域（12）上的Au电极 ）和形成在多孔硅区域（12）的相对侧上的p型硅衬底（11）上的欧姆电极（14）。 光发射表面由包括新材料的多孔硅区域的p型硅衬底组成。

公开(公告)号：WO9703453A3

公开(公告)日：1997-04-03

申请号：PCT/US9610978

申请日：1996-06-27

Applicant: INTEVAC INC ,  UNIV LELAND STANFORD JUNIOR

Inventor： BAUM AARON W ,  COSTELLO KENNETH A

IPC: H01J37/06 ,  G03F7/20 ,  H01J1/34 ,  H01J3/02 ,  H01J27/04 ,  H01J37/073 ,  H01J

CPC classification number: G03F7/70375 ,  H01J3/021 ,  H01J27/04 ,  H01J37/073 ,  H01J2201/3423

Abstract: An electron source includes a negative electron affinity photocathode (10) on a light-transmissive substrate (12) and a light beam generator (50) for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics (66) for forming the electrons into an electron beam and a vacuum enclosure (14) for maintaining the photocathode at high vacuum. In one embodiment, the active emission area of the photocathode is defined by the light beam that is incident on the photocathode. In another embodiment, the active emission area of the photocathode is predefined by surface modification of the photocathode. The source provides very high brightness from an ultra-small active emission area of the photocathode.

公开(公告)号：WO1997003453A2

公开(公告)日：1997-01-30

申请号：PCT/US1996010978

申请日：1996-06-27

Applicant: INTEVAC, INC. ,  THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

Inventor： INTEVAC, INC. ,  THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY ,  BAUM, Aaron, W. ,  COSTELLO, Kenneth, A.

IPC: H01J00/00

CPC classification number: G03F7/70375 ,  H01J3/021 ,  H01J27/04 ,  H01J37/073 ,  H01J2201/3423

Abstract: An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. In one embodiment, the active emission area of the photocathode is defined by the light beam that is incident on the photocathode. In another embodiment, the active emission area of the photocathode is predefined by surface modification of the photocathode. The source provides very high brightness from an ultra-small active emission area of the photocathode.

Abstract translation: 电子源包括透光性基板上的负电子亲合性光电阴极和光束发生器，用于将光束引导通过基板在光电阴极处，以激发电子进入导带。 光电阴极具有用于发射尺寸小于约2微米的电子的至少一个有效面积。 电子源还包括用于将电子形成电子束的电子光学器件和用于将光电阴极保持在高真空度的真空外壳。 在一个实施例中，光电阴极的有效发射面积由入射在光电阴极上的光束限定。 在另一个实施方案中，光电阴极的活性发射面积是通过光电阴极的表面改性预先确定的。 光源从光电阴极的超小活性发射区提供非常高的亮度。

公开(公告)号：WO1991014283A1

公开(公告)日：1991-09-19

申请号：PCT/US1991001006

申请日：1991-02-13

Applicant: VARIAN ASSOCIATES, INC.

Inventor： VARIAN ASSOCIATES, INC. ,  COSTELLO, Kenneth, Arthur ,  SPICER, Wlliam, E. ,  AEBI, Verle, W.

IPC: H01L27/14

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: An improved transferred electron III-V semiconductor photocathode (12) comprising an aluminum contact pad (40) and an aluminum grid (42) structure that improves quantum efficiency by removing a major obstacle to electrons escaping into the vacuum and controls dark spot blooming caused by overly bright photon emission sources.