Abstract:
PURPOSE: An automatically controlled apparatus and method for shielding a reverse current using a current sensor are provided to automatically optimize a reverse current by inducing a reverse current to flow around a wire. CONSTITUTION: A magnetic field generating device(70) generates a leakage magnetic field(711) to be shielded. A current sensor unit(721) senses a current flowing in a coil of the magnetic field generating device. The current sensor unit transmits the sensed current signal to a current size sensing unit(722) of a controller block. The current size sensing unit senses the size of the current from the transmitted current signal. A phase detection unit(723) detects the phase of the current from the current signal detected from the current sensor unit. A shield current calculation unit(724) produces proper size and phase values of the shield current from size and phase information of the current.
Abstract:
전류 측정 소자는 제1 도전성 패턴 및 적어도 하나의 제2 도전성 패턴을 포함한다. 제1 전도성은 패턴 기판의 제1 면에 형성된다. 적어도 하나의 제2 도전성 패턴은 제1 도전성 패턴 주변에 코일(coil) 구조의 도전 경로가 형성되도록 기판의 제2 면에 위치하는 재배선층(redistribution layer)에 형성된다. 따라서, 전류 측정 소자는 제1 도전성 패턴에 흐르는 입력 전류에 응답하여 코일 구조의 도전 경로 상에 형성되는 유도 전압에 기초하여 입력 전류의 세기를 정밀하게 측정할 수 있다.
Abstract:
PURPOSE: A semiconductor chip, a manufacturing method thereof, and a semiconductor module including the same are provided to improve the timing margin and voltage margin of input and output signals by including a resistance structure which is electrically connected between the through silicon via and a substrate. CONSTITUTION: A through silicon via(110) passes through both sides of a substrate(170). A resistance structure(130) is electrically connected between the through silicon via and the substrate. A pad(150) is formed on the substrate with a contact or via shape. A redistribution layer(171) includes a first conductive pattern(120) and a second conductive pattern(140). The first conductive pattern electrically connects the through silicon via and the resistance structure.
Abstract:
PURPOSE: A semiconductor chip package, a semiconductor module including the same, an electronic system, and a manufacturing method of the semiconductor chip package are provided to effectively release a heat which is generated in the core region of a first semiconductor chip by arranging a plurality of second semiconductor chips in the interface region of a first semiconductor chip. CONSTITUTION: A first semiconductor chip comprises an interface region(114) which is equipped with a core region(112) and a plurality of first input-output pads(116). A plurality of second semiconductor chips(120) comprises a first side and a second side which are faced each other. The second semiconductor chip comprises a plurality of second input-output pads(122) which is electrically connected with the first input-output pad. A plurality of second semiconductor chips is arranged in the interface region in order to be directly touched with a plurality of first input-output pads. The first semiconductor chip comprises a fixing means which fixes a plurality of second semiconductor chips.
Abstract:
PURPOSE: A receiving terminal having an off-chip channel is provided to improve the speed of receiving a signal by receiving a parallel signal through a delay of an off-chip channel. CONSTITUTION: A plurality of off-chip transmission channels(210a,210b,210c,210n) delays one of input signal and supply a plurality of delay input signals having different delay times. A plurality of on-chip input terminals are respectively connected to a plurality of off-chip transmission channels. A plurality of on-chip input terminals are installed on the chip. A plurality of input buffers(230a,230b,230c,230n) receive a delay input signals through each on-chip input terminal and supply a plurality of internal input signals.
Abstract:
듀플렉스(Duplex) 송수신 시스템이 구성되는 시스템 인 패키지의 패키지 기판에 내장되는 방향성 결합기는 외부로부터 유입되는 전자기파를 차단하고 신호선의 그라운드를 만들어 주기 위한 제1 그라운드 레이어, 상기 제1 그라운드 레이어 위에 적층되는 유전체층에 형성되는 폴디드 커플드 라인(folded coupled line) 형태의 제1 및 제2 신호라인들 및 상기 유전체층 위에 적층되어 외부로부터 유입되는 전자기파를 차단하고 신호선의 그라운드를 만들어 주기 위한 제2 그라운드 레이어를 포함한다.
Abstract:
PURPOSE: A stacked chip package including a through wafer via is provided to stably supply a power source by transmitting signals to through wafer via or wire bond after dividing the signals according to frequencies. CONSTITUTION: A stacked chip package(700) includes a semiconductor substrate(780), a plurality of semiconductor chips(710,720,730,740), a plurality of first through wafer vias(713), and a plurality of second through wafer vias(711a,711b,712a,712b). The semiconductor chips are laminated on the semiconductor substrate. The first through wafer vias are formed on a first same coordinate of the semiconductor chips, penetrate the semiconductor chips, and transmit a high frequency signal. The second through wafer vias are formed on a second same coordinate different from the first same coordinate, penetrate the semiconductor chips, and transmit a low frequency signal.
Abstract:
A semiconductor package substrate is provided to reduce a noise generated through the cutout by including a dually stacked EBG(Electromagnetic Band Gap) structure around cutouts. A semiconductor package substrate(100) includes a ground plane(120), a power plane(140), a plurality of first EBG planes(160), a plurality of second EBG planes(180). The ground plane provides the ground voltage. The power plane provides the power supply voltage. The power plane is parallel to the ground plane. A plurality of first EBG planes are positioned between the ground plane and the power plane. The plurality of first EBG planes surround a cutout(150) formed in the ground plane or the power plane. The plurality of second EBG planes are positioned between the ground plane and the power plane. The plurality of second EBG planes surround the cutout. The plurality of second EBG planes are formed with the laminating structure with the first EBG planes.
Abstract:
A semiconductor package substrate with a double stacked electromagnetic bandgap structure is provided to reduce the voltage drop of return current in order to smoothen signal transmission and to prevent noise coupling. A semiconductor package substrate(100) comprises a ground plane(120), a power plane(140), a via hole(150), a plurality of first EBG planes(160) and a plurality of second EBG planes(180). The ground plane provides ground voltage. The power plane provides power supply voltage. The power plane is parallel to the ground plane. The via hole delivers signals through the ground plane and power plane. The first EBG planes are positioned between the ground plane and the power plane. The first EBG planes surround the via hole. The second EBG planes are positioned between the ground plane and the power plane. The second EBG planes surround the via hole. The first and second EBG planes are laminated.
Abstract:
A directional coupler and a system-in-package of a duplex transceiver including the same are provided to reduce a size of a directional coupler by designing a first signal line and a second signal line into a folded coupled line shape. A directional coupler includes a first ground layer(20), a second ground layer(40), a first signal line, and a second signal line(70). The first ground layer blocks an external electromagnetic wave. The first signal line and the second signal line are formed on a dielectric layer(30) into a folded coupled shape. The dielectric layer is laminated on the first ground layer. The second ground layer is laminated on the dielectric layer in order to block the external electromagnetic wave. The first ground layer and the second ground layer form a ground for the first signal line and the second signal line. The first signal line and the second signal line are a strip transmission line.