ACTIVE MATRIX FIELD EMISSION DISPLAY WITH PERIPHERAL DRIVE SIGNAL SUPPLY
    191.
    发明申请
    ACTIVE MATRIX FIELD EMISSION DISPLAY WITH PERIPHERAL DRIVE SIGNAL SUPPLY 审中-公开
    具有外围驱动信号电源的主动矩阵场发射显示

    公开(公告)号:WO1994029841A1

    公开(公告)日:1994-12-22

    申请号:PCT/US1994006758

    申请日:1994-06-14

    Abstract: A field emission display (110) of the active matrix type is arranged in rows and columns with a current source (126) for each column. As an active matrix display, each pixel circuit (118) in an array of pixel circuits (116) includes a switch for enabling display by that pixel circuit. By locating the current source (126) outside the array (116), for example outside a contour circumscribing the array when the display is formed on a susbstrate, smaller pixel circuit geometries are achieved.

    Abstract translation: 有源矩阵类型的场发射显示器(110)以行和列布置,每列具有电流源(126)。 作为有源矩阵显示器,像素电路(116)阵列中的每个像素电路(118)包括用于使该像素电路能够显示的开关。 通过将电流源(126)定位在阵列(116)外部,例如当在显示器形成在突起上时围绕阵列的轮廓外部,实现较小的像素电路几何形状。

    TRIODE STRUCTURE FLAT PANEL DISPLAY EMPLOYING FLAT FIELD EMISSION CATHODES
    192.
    发明申请
    TRIODE STRUCTURE FLAT PANEL DISPLAY EMPLOYING FLAT FIELD EMISSION CATHODES 审中-公开
    三角形结构平板显示器采用平面场发射阴极

    公开(公告)号:WO1994015352A1

    公开(公告)日:1994-07-07

    申请号:PCT/US1993011791

    申请日:1993-12-06

    Abstract: A flat panel display for displaying visual information includes a plurality of corresponding light-emitting anodes (130), and field-emission cathodes (170), each of the anodes emitting light in response to emission from each of the corresponding cathodes, each of the cathodes (170) including a layer of low work function material having a relatively flat emission surface of a plurality of distributed localized electron emission sites and a grid assembly (102) interposed between the corresponding anodes (130) and cathodes (170) to thereby control emission levels to the anodes from the corresponding cathodes.

    Abstract translation: 用于显示视觉信息的平板显示器包括多个对应的发光阳极(130)和场发射阴极(170),每个阳极响应于来自每个相应阴极的发射而发光。 包括具有多个分布的局部电子发射部位的相对平坦的发射表面的低功函数材料层的阴极(170)和插入在相应的阳极(130)和阴极(170)之间的栅格组件(102),从而控制 从相应的阴极到阳极的排放水平。

    DIODE STRUCTURE FLAT PANEL DISPLAY
    193.
    发明申请
    DIODE STRUCTURE FLAT PANEL DISPLAY 审中-公开
    二极管结构平板显示器

    公开(公告)号:WO1994015350A1

    公开(公告)日:1994-07-07

    申请号:PCT/US1993011796

    申请日:1993-12-06

    Abstract: A matrix addressed diode flat panel display (820) including a diode pixel structure. The flat panel display includes a cathode assembly having a plurality of cathodes (210-280), each cathode including a plurality of cathode conductive material (440) and a layer of low effective work-function material (460) deposited over the cathode conductive material and an anode assembly having a plurality of anodes (290-292), each anode including a layer of anode conductive material (410) and a cathodoluminescent material (430) deposited over the anode conductive material, the anode assembly located proximate the cathode assembly to thereby receive the charged particle emissions from the cathode assembly. The display further includes means (100) for selectively varying field emissions between the plurality of corresponding light-emitting anodes and field-emission cathodes.

    Abstract translation: 一种包括二极管像素结构的矩阵寻址二极管平板显示器(820)。 平板显示器包括具有多个阴极(210-280)的阴极组件,每个阴极包括多个阴极导电材料(440)和沉积在阴极导电材料上的低有效功函数材料层(460) 以及具有多个阳极(290-292)的阳极组件,每个阳极包括沉积在阳极导电材料上的阳极导电材料层(410)和阴极发光材料(430),阳极组件位于阴极组件附近, 从而从阴极组件接收带电粒子的排放。 显示器还包括用于选择性地改变多个对应的发光阳极和场致发射阴极之间的场发射的装置(100)。

    FLAT SCREEN HAVING INDIVIDUALLY DIPOLE-PROTECTED MICRODOTS
    194.
    发明申请
    FLAT SCREEN HAVING INDIVIDUALLY DIPOLE-PROTECTED MICRODOTS 审中-公开
    具有独立保护的微阵列的平面屏幕

    公开(公告)号:WO1994014153A1

    公开(公告)日:1994-06-23

    申请号:PCT/FR1993001190

    申请日:1993-12-03

    CPC classification number: H01J29/04 H01J1/3042 H01J2201/319

    Abstract: A flat screen having individually dipole-protected microdots and consisting of a field-emission cathode comprising microdots (12) individually protected by means of a series electrical coupling with a dipole (13) consisting of a depletion mode field effect transistor, said dipoles being designed to enable the protection threshold and the emission current level to be altered on all dots at once solely by changing the biasing of the substrate (14) common to said dipoles. Application in general to the field of display screens.

    Abstract translation: 平面屏幕具有单独的偶极保护微点,并由场致发射阴极组成,该场发射阴极包括通过与由耗尽型场效应晶体管组成的偶极子(13)的串联电耦合单独保护的微点(12),所述偶极子被设计 以通过改变所述偶极子共用的衬底(14)的偏置来一次仅在所有点上改变保护阈值和发射电流电平。 一般应用于显示屏领域。

    VERTICAL MICROELECTRONIC FIELD EMISSION DEVICES AND METHODS OF MAKING SAME
    195.
    发明申请
    VERTICAL MICROELECTRONIC FIELD EMISSION DEVICES AND METHODS OF MAKING SAME 审中-公开
    垂直微电子场发射装置及其制造方法

    公开(公告)号:WO1993018536A1

    公开(公告)日:1993-09-16

    申请号:PCT/US1993001727

    申请日:1993-03-03

    Applicant: MCNC

    CPC classification number: H01J3/021 H01J1/3042 H01J9/025 H01J2201/319

    Abstract: A vertical microelectronic field emitter (10) includes a conductive top portion (15) and a resistive bottom portion (16) in an elongated column (12) which extends vertically from a horizontal substrate (11). An emitter electrode (17) may be formed at the base of the column, and an extraction electrode (18) may be formed adjacent the top of the column. The elongated column reduces the parasitic capacitance of the microelectronic field emitter to provide high speed operation, while providing uniform column-to-column resistance. The field emitter may be formed by first forming tips (15) on the face of a substrate and then forming trenches (22) in the substrate (11) around the tips to form columns (12) in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric (19) and a conductor layer (18) is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate (11) with the trenches defining columns (12) in the substrate. Then, tips (15) are formed on top of the columns. The trenches are filled with dielectric and the conductor layers is formed on the dielectric to form the extraction electrodes.

    Abstract translation: 垂直微电子场发射器(10)包括从水平衬底(11)垂直延伸的细长柱(12)中的导电顶部(15)和电阻底部(16)。 可以在塔的底部形成发射电极(17),并且可以在柱的顶部附近形成引出电极(18)。 细长柱减小了微电子场发射器的寄生电容,以提供高速操作,同时提供均匀的柱对列电阻。 场发射器可以通过在衬底的表面上首先形成尖端(15)然后在衬底(11)周围的尖端上形成沟槽(22)而形成,以在衬底中形成柱(12),其中尖端位于 列的顶部。 沟槽填充有电介质(19),并且在电介质上形成导体层(18)。 或者,可以在衬底(11)的表面上形成沟槽,其中沟槽在衬底中限定柱(12)。 然后,顶部(15)形成在柱的顶部。 沟槽被电介质填充,并且导体层形成在电介质上以形成提取电极。

    A FIELD EMISSION DEVICE EMPLOYING A LAYER OF SINGLE-CRYSTAL SILICON
    196.
    发明申请
    A FIELD EMISSION DEVICE EMPLOYING A LAYER OF SINGLE-CRYSTAL SILICON 审中-公开
    采用一层单晶硅的场发射装置

    公开(公告)号:WO1992004732A1

    公开(公告)日:1992-03-19

    申请号:PCT/US1991006387

    申请日:1991-09-06

    Applicant: MOTOROLA, INC.

    CPC classification number: H01J9/025 H01J1/3042 H01J2201/319

    Abstract: A variety of field emission devices (308) and field emission device structures which employ non-substrate layers of single-crystal silicon (203) are provided. By employing non-substrate layers of single-crystal silicon (203), improved emission control is achieved and improved performance controlling devices (406) can be formed within the device structure.

    Abstract translation: 提供各种场致发射器件(308)和采用单晶硅非衬底层(203)的场致发射器件结构。 通过使用单晶硅(203)的非衬底层,实现了改进的发射控制,并且可以在器件结构内形成改进的性能控制器件(406)。

    ACTIVE-MATRIX FIELD EMISSION PIXEL
    198.
    发明申请
    ACTIVE-MATRIX FIELD EMISSION PIXEL 有权
    有源矩阵场发射像素

    公开(公告)号:US20120097958A1

    公开(公告)日:2012-04-26

    申请号:US13244078

    申请日:2011-09-23

    CPC classification number: H01J1/304 G09G3/22 H01J29/04 H01J31/127 H01J2201/319

    Abstract: A field emission pixel includes a cathode on which a field emitter emitting electrons is formed, an anode on which a phosphor absorbing electrons from the field emitter is formed, and a thin film transistor (TFT) having a source connected to a current source in response to a scan signal, a gate receiving a data signal, and a drain connected to the field emitter. The field emitter is made of carbon material such as diamond, diamond like carbon, carbon nanotube or carbon nanofiber. The cathode may include multiple field emitters, and the TFT may include multiple transistors having gates to which the same signal is applied, sources to which the same signal is applied, and drains respectively connected to the field emitters. An active layer of the TFT is made of a semiconductor film such as amorphous silicon, micro-crystalline silicon, polycrystalline silicon, wide-band gap material like ZnO, or an organic semiconductor.

    Abstract translation: 场发射像素包括其上形成有发射电子的场致发射体的阴极,形成从场致发射体吸收电子的荧光体的阳极以及响应于电流源的源极的薄膜晶体管(TFT) 扫描信号,接收数据信号的栅极和连接到场发射器的漏极。 场发射体由诸如金刚石,类金刚石碳,碳纳米管或碳​​纳米纤维的碳材料制成。 阴极可以包括多个场发射器,并且TFT可以包括多个晶体管,其具有施加相同信号的栅极,施加相同信号的源极以及分别连接到场发射极的漏极。 TFT的有源层由诸如非晶硅,微晶硅,多晶硅,宽带隙材料如ZnO的半导体膜或有机半导体制成。

    Active-Matrix Field Emission Display
    199.
    发明申请
    Active-Matrix Field Emission Display 审中-公开
    有源矩阵场发射显示

    公开(公告)号:US20080252196A1

    公开(公告)日:2008-10-16

    申请号:US12093293

    申请日:2006-06-28

    Abstract: Provided is a field emission display (FED) in which field emission devices are applied to a flat panel display. The FED includes: a cathode plate including a substrate, first and second thin film transistors (TFTs) that are serially connected on the substrate, a field emitter disposed on a drain electrode of the second TFT, a gate insulating layer having a gate hole surrounding the field emitter, and field emission gate electrodes disposed on the gate insulating layer; and an anode plate including a substrate, and red, green, and blue phosphors disposed on the substrate, wherein the cathode plate and the anode plate are vacuum-packaged parallel and opposite to each other. According to the present invention, uniformity of the FED panel can be significantly improved, and an inherent source-drain leakage current of the TFT can be significantly reduced, so that a contrast ratio of the FED can be significantly enhanced.

    Abstract translation: 提供了一种场致发射显示器(FED),其中场发射装置被应用于平板显示器。 FED包括:阴极板,包括基板,串联连接在基板上的第一和第二薄膜晶体管(TFT),设置在第二TFT的漏电极上的场致发射体,栅极绝缘层,具有围绕 所述场致发射体和设置在所述栅极绝缘层上的场致发射栅电极; 以及包括基板的阳极板和设置在基板上的红色,绿色和蓝色荧光体,其中阴极板和阳极板被彼此平行并相对地真空包装。 根据本发明,可以显着提高FED面板的均匀性,并且能够显着地降低TFT的固有源漏漏电流,从而可以显着提高FED的对比度。

    Method For Making an Emissive Cathode
    200.
    发明申请
    Method For Making an Emissive Cathode 失效
    制造发射阴极的方法

    公开(公告)号:US20080194168A1

    公开(公告)日:2008-08-14

    申请号:US11915222

    申请日:2006-05-29

    Abstract: A method for manufacturing a triode type cathode structure including depositing and etching: a cathode layer as cathode conductors; a grid layer as grid conductors; an electrical insulation layer and the grid conductors until reaching a resistive layer to provide cavities; and the cathode conductors to have a perforated structure at the intersection of the cathode conductors and grid conductors. Etching the grid conductors and the electrical insulation layer includes: a) depositing a resin layer on the grid layer, b) lithography and development of the resin layer according to a pattern that will form emissive pads, c) etching the grid layer according to the pattern, d) etching the insulation layer subjacent to the grid layer by extending the etching beyond emissive pad patterns, e) etching the grid layer at zones exposed by etching the insulation layer until reaching the resin layer, f) depositing a catalyst layer in openings of the resin layer to form emissive pads at the bottom of the cavities, and g) eliminating the resin layer.

    Abstract translation: 一种制造三极管型阴极结构的方法,包括沉积和蚀刻:阴极层作为阴极导体; 栅格层作为栅格导体; 电绝缘层和栅格导体,直到到达电阻层以提供空腔; 并且阴极导体在阴极导体和栅格导体的交叉处具有穿孔结构。 栅格导体和电绝缘层的蚀刻包括:a)在栅格层上沉积树脂层,b)根据将形成发射焊盘的图案对树脂层进行光刻和显影,c)根据 图案,d)通过将蚀刻延伸超过发光垫图案来蚀刻栅格层以下的绝缘层,e)在通过蚀刻绝缘层暴露的区域蚀刻栅格层直到到达树脂层,f)在开口中沉积催化剂层 的树脂层,以在空腔的底部形成发光垫,并且g)消除树脂层。

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