Abstract:
A field emission display (110) of the active matrix type is arranged in rows and columns with a current source (126) for each column. As an active matrix display, each pixel circuit (118) in an array of pixel circuits (116) includes a switch for enabling display by that pixel circuit. By locating the current source (126) outside the array (116), for example outside a contour circumscribing the array when the display is formed on a susbstrate, smaller pixel circuit geometries are achieved.
Abstract:
A flat panel display for displaying visual information includes a plurality of corresponding light-emitting anodes (130), and field-emission cathodes (170), each of the anodes emitting light in response to emission from each of the corresponding cathodes, each of the cathodes (170) including a layer of low work function material having a relatively flat emission surface of a plurality of distributed localized electron emission sites and a grid assembly (102) interposed between the corresponding anodes (130) and cathodes (170) to thereby control emission levels to the anodes from the corresponding cathodes.
Abstract:
A matrix addressed diode flat panel display (820) including a diode pixel structure. The flat panel display includes a cathode assembly having a plurality of cathodes (210-280), each cathode including a plurality of cathode conductive material (440) and a layer of low effective work-function material (460) deposited over the cathode conductive material and an anode assembly having a plurality of anodes (290-292), each anode including a layer of anode conductive material (410) and a cathodoluminescent material (430) deposited over the anode conductive material, the anode assembly located proximate the cathode assembly to thereby receive the charged particle emissions from the cathode assembly. The display further includes means (100) for selectively varying field emissions between the plurality of corresponding light-emitting anodes and field-emission cathodes.
Abstract:
A flat screen having individually dipole-protected microdots and consisting of a field-emission cathode comprising microdots (12) individually protected by means of a series electrical coupling with a dipole (13) consisting of a depletion mode field effect transistor, said dipoles being designed to enable the protection threshold and the emission current level to be altered on all dots at once solely by changing the biasing of the substrate (14) common to said dipoles. Application in general to the field of display screens.
Abstract:
A vertical microelectronic field emitter (10) includes a conductive top portion (15) and a resistive bottom portion (16) in an elongated column (12) which extends vertically from a horizontal substrate (11). An emitter electrode (17) may be formed at the base of the column, and an extraction electrode (18) may be formed adjacent the top of the column. The elongated column reduces the parasitic capacitance of the microelectronic field emitter to provide high speed operation, while providing uniform column-to-column resistance. The field emitter may be formed by first forming tips (15) on the face of a substrate and then forming trenches (22) in the substrate (11) around the tips to form columns (12) in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric (19) and a conductor layer (18) is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate (11) with the trenches defining columns (12) in the substrate. Then, tips (15) are formed on top of the columns. The trenches are filled with dielectric and the conductor layers is formed on the dielectric to form the extraction electrodes.
Abstract:
A variety of field emission devices (308) and field emission device structures which employ non-substrate layers of single-crystal silicon (203) are provided. By employing non-substrate layers of single-crystal silicon (203), improved emission control is achieved and improved performance controlling devices (406) can be formed within the device structure.
Abstract:
A field emission pixel includes a cathode on which a field emitter emitting electrons is formed, an anode on which a phosphor absorbing electrons from the field emitter is formed, and a thin film transistor (TFT) having a source connected to a current source in response to a scan signal, a gate receiving a data signal, and a drain connected to the field emitter. The field emitter is made of carbon material such as diamond, diamond like carbon, carbon nanotube or carbon nanofiber. The cathode may include multiple field emitters, and the TFT may include multiple transistors having gates to which the same signal is applied, sources to which the same signal is applied, and drains respectively connected to the field emitters. An active layer of the TFT is made of a semiconductor film such as amorphous silicon, micro-crystalline silicon, polycrystalline silicon, wide-band gap material like ZnO, or an organic semiconductor.
Abstract:
Provided is a field emission display (FED) in which field emission devices are applied to a flat panel display. The FED includes: a cathode plate including a substrate, first and second thin film transistors (TFTs) that are serially connected on the substrate, a field emitter disposed on a drain electrode of the second TFT, a gate insulating layer having a gate hole surrounding the field emitter, and field emission gate electrodes disposed on the gate insulating layer; and an anode plate including a substrate, and red, green, and blue phosphors disposed on the substrate, wherein the cathode plate and the anode plate are vacuum-packaged parallel and opposite to each other. According to the present invention, uniformity of the FED panel can be significantly improved, and an inherent source-drain leakage current of the TFT can be significantly reduced, so that a contrast ratio of the FED can be significantly enhanced.
Abstract:
A method for manufacturing a triode type cathode structure including depositing and etching: a cathode layer as cathode conductors; a grid layer as grid conductors; an electrical insulation layer and the grid conductors until reaching a resistive layer to provide cavities; and the cathode conductors to have a perforated structure at the intersection of the cathode conductors and grid conductors. Etching the grid conductors and the electrical insulation layer includes: a) depositing a resin layer on the grid layer, b) lithography and development of the resin layer according to a pattern that will form emissive pads, c) etching the grid layer according to the pattern, d) etching the insulation layer subjacent to the grid layer by extending the etching beyond emissive pad patterns, e) etching the grid layer at zones exposed by etching the insulation layer until reaching the resin layer, f) depositing a catalyst layer in openings of the resin layer to form emissive pads at the bottom of the cavities, and g) eliminating the resin layer.