Abstract:
Cette source d'électrons à émission de champ comporte une pointe (12-14) émettrice d'électrons dont la plus grande largeur de sa section transversale est supérieure à 0,4 mm, la face extérieure de cette pointe étant réalisée dans un matériau composite formé d'une matrice en matériau électriquement isolant à l'intérieur de laquelle et à la surface de laquelle sont réparties aléatoirement des particules de carbone pour rendre électriquement conductrice la pointe. Les particules de carbone représentent moins de 40% en masse du matériau composite. Les particules de carbone sont des particules de noir de carbone présentant une surface spécifique de plus de 150 m 2 /g ou de poudre de graphite et la pointe est entièrement réalisée dans ce matériau composite.
Abstract:
The present invention relates to a field emission display device and a manufacturing method thereof, wherein a lower plate includes: a cathode electrode formed on a substrate; a diffusion barrier formed on the cathode electrode; a seed metal layer formed on the diffusion barrier; carbon nano-tubes which are grown in a single crystal on grains of the seed metal layer; a gate insulating layer which is formed on the substrate having the cathode electrode, the diffusion barrier, and the seed metal layer so as to cover the carbon nano-tubes; and a gate electrode formed on the gate insulating layer.
Abstract:
본 발명은 전계방출 표시장치와 그 제조방법에 관한 것으로, 그 하판은 기판 상에 형성되는 캐소드전극; 상기 캐소드전극 상에 형성되는 확산 차단층; 상기 확산 차단층 상에 형성되는 씨드 금속층; 상기 씨드 금속층의 그레인들 상에서 단결정으로 성장된 탄소나노튜브들; 상기 탄소나노튜브들을 덮도록 상기 캐소드전극, 상기 확산 차단층, 및 상기 씨드 금속층이 형성된 기판 상에 형성되는 게이트 절연층; 및 상기 게이트 절연층 상에 형성된 게이트전극을 포함한다.
Abstract:
The present invention relates to a field emission apparatus and a method of driving the field emission apparatus, which has a three-pole structure of dual emitters formed on both first and second electrodes of a rear substrate in order to obviate a distinction between a gate and a cathode, thus enabling dual field emission. In such a field emission apparatus, a ground is formed between an anode and a point of the first and second electrodes of the rear substrate, and a square wave is applied thereto in order to alternately generate field emission in the first and second electrodes, thus increasing a light-emitting area and emission efficiency, decreasing a driving voltage and consumption power, saving the manufacturing cost and manufacturing time, and accomplishing a longer lifespan.
Abstract:
The invention concerns an electron-emitting device (50) with multiple electron beams (59) comprising a first structure (6) including a plurality of sources (61) of electron beams (69), hybridized with a second structure (7) comprising a plurality of lens apertures 8).
Abstract:
Using existing printed circuit board technologies, the present invention builds electrical devices embedded in PCB. These devices can be built in parallel with PCB and integrated with other electrical components simultaneously. Examples of such PCB embedded devices are vacuum tubes, cathode ray tubes capable of forming flat panel display, resistor array capable of forming image sensor, and diode arrays. Using existing PCB photo etching technologies, we can achieve extreme cost efficiency under mass production conditions.
Abstract:
Using existing printed circuit board technologies, the present invention builds electrical devices embedded in PCB. These devices can be built in parallel with PCB and integrated with other electrical components simultaneously. Examples of such PCB embedded devices are vacuum tubes, cathode ray tubes capable of forming flat panel display, resistor array capable of forming image sensor, and diode arrays. Using existing PCB photo etching technologies, we can achieve extreme cost efficiency under mass production conditions.