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    METHOD FOR MAKING MICROMECHANICAL STRUCTURES HAVING AT LEAST ONE LATERAL, SMALL GAP THEREBETWEEN AND MICROMECHANICAL DEVICE PRODUCED THEREBY
    201.
    发明申请
    METHOD FOR MAKING MICROMECHANICAL STRUCTURES HAVING AT LEAST ONE LATERAL, SMALL GAP THEREBETWEEN AND MICROMECHANICAL DEVICE PRODUCED THEREBY 审中-公开
    用于生产结构MICROMECHANIC具有至少一个中间空间的限制和设备由此制造细观MEANS

    公开(公告)号：WO02016256A2

    公开(公告)日：2002-02-28

    申请号：PCT/US2001/041874

    申请日：2001-08-24

    IPC: B81B3/00 ,  H03H3/007 ,  H03H3/013 ,  H03H9/02 ,  H03H9/24 ,  H03H9/46 ,  H03H9/50 ,  B81B

    CPC classification number: B81C1/0019 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2203/0307 ,  B81C1/00626 ,  B81C2201/0109 ,  H03H3/007 ,  H03H3/0072 ,  H03H3/013 ,  H03H9/02362 ,  H03H9/2436 ,  H03H9/46 ,  H03H9/462 ,  H03H9/505 ,  H03H2009/02496

    Abstract: A method and resulting formed device are disclosed wherein the method combines polysilicon surface-micromachining with metal electroplating technology to achieve a capacitively-drive, lateral micromechanical resonator with submicron electrode-to-resonator capacitor gaps. Briefly, surface-micromachining is used to achieve the structural material for a resonator, while conformal metal-plating is used to implement capacitive transducer electrodes. This technology makes possible a variety of new resonator configurations, including disk resonators and lateral clamped-clamped and free-free flexural resonators, all with significant frequency and Q advantages over vertical resonators. In addition, this technology introduces metal electrodes, which greatly reduces the series resistance in electrode interconnects, thus, minimizing Q-loading effects while increasing the power handling ability of micromechanical resonators.

    Abstract translation: 用这种方法制造的方法和装置 后者包括将多晶硅表面微机械加工与电解电镀技术相结合，以便获得在电极和亚微米级谐振器之间具有电容空间的电容性横向微机械谐振器。 这种表面微加工技术用于开发谐振器的结构材料，同时应用传统电解电镀形成电容式换能器电极。 该技术使一个新品种谐振器的配置，包括磁盘谐振器和谐振器的横向挠曲，双夹紧，双自由度，这些谐振器作为一个整体，其具有高频和因子优点 Q质量与垂直谐振器相比。 此外，该技术还引入了金属电极，大大限制了电极互连中的串联电阻，从而最大限度地减小了负载效应Q，同时提高了谐振器的功率管理能力。 微机械。

    BULK SILICON STRUCTURES WITH THIN FILM FLEXIBLE ELEMENTS
    202.
    发明申请
    BULK SILICON STRUCTURES WITH THIN FILM FLEXIBLE ELEMENTS 审中-公开
    具有薄膜柔性元件的大体积硅结构

    公开(公告)号：WO01094253A2

    公开(公告)日：2001-12-13

    申请号：PCT/US2001/017020

    申请日：2001-05-24

    IPC: B81B3/00 ,  G02B6/35 ,  G02B26/08

    CPC classification number: G02B6/3584 ,  B81B2201/045 ,  B81B2203/0109 ,  B81B2203/033 ,  B81C1/00182 ,  B81C1/00666 ,  B81C2201/0109 ,  G02B6/3518 ,  G02B6/3556 ,  G02B6/357 ,  G02B26/0841

    Abstract: A method for forming a suspend structure with thin film flexible elements is disclosed. In one embodiment, the method etches a trench in a bulk substrate around to be released components. The trench is filled with sacrificial material. The surface of the sacrificial material is planarized. Thin film hinge material is patterned and etched on the surface of the sacrificial material. The bulk substrate is then etched from the backside to pre-release the sacrificial material. The sacrificial material is etched to remove the sacrificial material, thus forming a suspended structure with thin film hinges.

    Abstract translation: 公开了一种用薄膜柔性元件形成悬挂结构的方法。 在一个实施例中，该方法蚀刻大块衬底中的沟槽以被释放的部件。 沟槽填充有牺牲材料。 牺牲材料的表面被平坦化。 在牺牲材料的表面上对薄膜铰链材料进行图案化和蚀刻。 然后从背面蚀刻大块衬底以预先释放牺牲材料。 牺牲材料被蚀刻以去除牺牲材料，从而形成具有薄膜铰链的悬挂结构。

    METHOD FOR FABRICATING MICROSTRUCTURES USING TEMPORARY BRIDGES
    203.
    发明申请
    METHOD FOR FABRICATING MICROSTRUCTURES USING TEMPORARY BRIDGES 审中-公开
    使用临时桥梁制作微结构的方法

    公开(公告)号：WO1995004933A1

    公开(公告)日：1995-02-16

    申请号：PCT/US1994008791

    申请日：1994-08-04

    Applicant: ANALOG DEVICES, INC.

    Inventor： ANALOG DEVICES, INC. ,  CHAU, Kevin, H., L. ,  SALTMARSH, Michael, P. ,  CHURCH, Deborah, A.

    IPC: G01P15/08

    CPC classification number: B81C1/0092 ,  B81B2203/0109 ,  B81C1/00944 ,  B81C2201/0109 ,  G01P15/0802 ,  G01P2015/0814

    Abstract: A method and apparatus for forming bridges between surfaces of a suspended microstructure and other surfaces of the suspended microstructure or particularly placed anchors on the die in order to increase the stiffness and lateral strength of the microstructure during fabrication. Once fabrication is completed, the bridges are cut by a laser thus fully releasing the microstructure into its final suspended and resilient condition.

    Abstract translation: 一种用于在悬浮的微结构的表面之间形成桥的方法和装置，其中悬浮的微结构的其它表面或特别放置在模具上的锚固件，以便在制造期间增加微结构的刚度和横向强度。 一旦制造完成，桥梁被激光切割，从而将微结构完全释放到其最终的悬浮和弹性状态。

    PROCESS FOR MANUFACTURING MEMS DEVICES HAVING BURIED CAVITIES AND MEMS DEVICE OBTAINED THEREBY
    206.
    发明公开
    PROCESS FOR MANUFACTURING MEMS DEVICES HAVING BURIED CAVITIES AND MEMS DEVICE OBTAINED THEREBY 有权
    用于生产MEMS器件具有掩埋腔和这样制作的MEMS器件

    公开(公告)号：EP2462050A1

    公开(公告)日：2012-06-13

    申请号：EP10737938.0

    申请日：2010-08-05

    Applicant: STMicroelectronics Srl

    Inventor： CORONA, Pietro ,  LOSA, Stefano ,  GELMI, Ilaria ,  CAMPEDELLI, Roberto

    IPC: B81C1/00

    CPC classification number: B81C1/00476 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C2201/0109

    Abstract: A process for manufacturing a MEMS device, wherein a bottom silicon region (4b) is formed on a substrate and on an insulating layer (3); a sacrificial region (5a) of dielectric is formed on the bottom region; a membrane region (21), of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug as far as the sacrificial region so as to form through trenches (15); the side wall and the bottom of the through trenches are completely coated in a conformal way with a porous material layer (16); at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity (18); and the through trenches are filled with filling material (20a) so as to form a monolithic membrane suspended above the cavity (18).

    Abstract translation: 一种用于制造微机电系统器件，worin底部硅区域形成在基板上并与绝缘层的过程; 电介质的牺牲区域形成在底部区域; 膜区域，半导体材料制成的，外延生长在牺牲区域; 膜区域被向下挖至牺牲区域，以便形成通孔的; 所述侧壁和所述孔的底部完全被呼叫涂覆在多孔材料层的共形方式; 所述牺牲区域的至少一个部分通过多孔材料层选择性地去除，并且形成的空腔; 和孔中填充有填充材料，以形成悬浮在腔上方的整体式膜。 其它实施方案涉及MEMS器件和压力传感器。

    Procédé de formation d'une structure multicouches
    207.
    发明公开
    Procédé de formation d'une structure multicouches 有权
    Verfahren zum Formen einer Mehrschichtenstruktur

    公开(公告)号：EP2453470A1

    公开(公告)日：2012-05-16

    申请号：EP11354065.2

    申请日：2011-11-09

    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Desplobain, Sébastien ,  Gaillard, Frederic-Xavier ,  Morand, Yves ,  Nemouchi, Fabrice

    IPC: H01L21/306 ,  B81B1/00

    CPC classification number: H01L21/306 ,  B81C1/0038 ,  B81C2201/0109 ,  B81C2201/0115

    Abstract: Le procédé de formation d'une structure multicouches sur un substrat comprend la prévision d'un empilement comprenant successivement une couche de blocage de trous d'électrons, une première couche (6) en matériau semi-conducteur dopé de type N ayant une concentration en éléments dopants supérieure ou égale à 10 18 atomes/cm 3 ou dopé de type P, et une deuxième couche en matériau semi-conducteur de nature différente. Un plot de contact électrique latéral (12) entre la première couche (6) et le substrat est réalisé et le matériau de la première couche est soumis à un traitement anodique dans un électrolyte (18).

    Abstract translation: 该方法包括提供连续包含电子空穴阻挡层的叠层，由掺杂浓度大于或等于10倍18原子/立方厘米或P掺杂半导体材料的N掺杂半导体材料制成的层（6），以及 由不同性质的半导体材料制成的另一层（8）。 在前一层和基底之间形成横向电接触焊盘（12）。 前一层的材料在电解质（18）即氢氟酸基电解质中进行阳极处理。

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