Abstract:
A method for implementation by a laser spectrometer (200, 300) is provided. The method includes first scanning (110), by a control unit (255) using a first set of laser spectrometer operating parameters, a first wavelength range by adjusting a wavelength of light of a beam emitted by a laser light source (205) and passing through a sample gas. The first wavelength range encompasses a first spectral feature corresponding to a first constituent. The method also includes at least one second scanning (120), by the control unit (255) using a second set of laser spectrometer operating parameters, a second wavelength range by adjusting the wavelength of light emitted from the laser light source (205) and passing through the sample gas. The second wavelength range has a second spectral feature corresponding to at least one second constituent. The control unit (255) also determines (130) a first concentration of the first constituent and a second concentration of the at least one second constituent.
Abstract:
A laser spectrometer can be operated for analysis of one or more analytes present in a combustible gas mixture. The spectrometer can include one or more features that enable intrinsically safe operation. In other words, electrical, electronic, thermal, and/or optical energy sources can be limited within an hazardous are of the spectrometer where it is possible for an explosive gas mixture to exist. Methods, systems, articles and the like are described.
Abstract:
Background composition concentration data representative of an actual background composition of a sample gas can be used to model absorption spectroscopy measurement data obtained for a gas sample and to correct an analysis of the absorption spectroscopy data (e.g. for structural interference and collisional broadening) based on the modeling.
Abstract:
A first contact surface (310) of a semiconductor laser chip (302) can be formed to a first target surface roughness and a second contact surface (312) of a carrier mounting (304) can be formed to a second target surface roughness. A first bond preparation layer (306) comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer (308) comprising a second metal can optionally be applied to the formed second contact surface. Both preparation layers may be made of gold and diffusion bonding results from a heating of device under pressure. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.
Abstract:
A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
Abstract:
A reference harmonic absorption curve of a laser absorption spectrometer, which can include a tunable or scannable laser light source and a detector, can have a reference curve shape and can include a first, second, or higher order harmonic signal of a reference signal generated by the detector in response to light passing from the laser light source through a reference gas or gas mixture. The reference gas or gas mixture can include one or more of a target analyte and a background gas expected to be present during analysis of the target analyte. The reference harmonic absorption curve can have been determined for the laser absorption spectrometer in a known or calibrated state. A test harmonic absorption curve having a test curve shape is compared with the reference harmonic absorption curve to detect a difference between the test curve shape and the reference curve shape that exceeds a predefined allowed deviation and therefore indicates a change in an output of the laser light source relative to the known or calibrated state. One or more operating and/or analytical parameters of the laser absorption spectrometer are adjusted to correct the test curve shape to reduce the difference between the test curve shape and the reference curve shape.
Abstract:
A valid state of an analytical system that includes a light source and a detector can be verified by determining that deviation of first light intensity data quantifying a first intensity of light received at the detector from the light source after the light has passed at least once through each of a reference gas in a validation cell and a zero gas from a stored data set does not exceed a pre-defined threshold deviation. The stored data set can represent at least one previous measurement collected during a previous instrument validation process performed on the analytical system. The reference gas can include a known amount of an analyte. A concentration of the analyte in a sample gas can be determined by correcting second light intensity data quantifying a second intensity of the light received at the detector after the light passes at least once through each of the reference gas in the validation cell and a sample gas containing an unknown concentration of the analyte compound. Related systems, methods, and articles of manufacture are also described.