Abstract:
Flat panel image sensor (10) is provided by combining photoconductive imaging electrodes of a vidicon with a two-dimensional array of cold cathode field emitters (14) commonly used for flat panel field emission display (FED) systems. The FED operates normally to emit electrons which are accelerated in prior art displays towards a luminescent phosphor to generate light output proportional to the cathode emission. Rather than accelerating towards a phosphor, electrons are accelerated towards a photoconductor layer (16) to replace charge removed from the layer by an incident radiation pattern directed at the photoconductor layer (16) through a layer of transparent, electrically-conducting material (17) which serves as a radiation window. The transparent, electrically-conducting layer (17) may be partitioned to reduce stray capacitance for large area sensors and the partitioned, electrically-conducting layer (17) permits a parallel readout mode of operation.
Abstract:
A field emitter array magnetic sensor (FEAMS) device, comprising: an anode; a base plate member having on a first side thereof a plurality of gated field emitter elements thereon, in spaced proximal relationship to the anode. The plurality of gated field emitter elements and the anode structure are arranged so that each of the gated field emitter elements is in electron emitting relationship to varying electron impingement sites depending on intensity of the magnetic field on the gated field emitter element. The device includes structure for sensing the locations of the anode structure electron impingement sites receiving electrons from the plurality of gated field emitter elements, and determining the strength and orientation of the magnetic field. Also disclosed are various anode configurations which may be usefully employed in the FEAMS device of the invention.
Abstract:
A field emission cathode includes a layer of conductive material (14) and a layer of amorphic diamond film (12), functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities.
Abstract:
본 발명은 전계 방출 장치에 대한 것으로서, 애노드 기판과 대향하는 절연체의 캐소드 기판, 상기 캐소드 기판 상에 서로 이격되어 배열되어 있는 복수의 캐소드 전극, 그리고 상기 캐소드 전극 상에 형성되는 에미터를 포함하며, 상기 에미터에서 방출된 전자로 인해 상기 캐소드 전극 사이의 상기 캐소드 기판에 전하가 축적되지 않도록 상기 복수의 캐소드 전극 사이의 이격 거리가 제1 임계값 이하이며, 상기 에미터로부터 상기 캐소드 전극 끝 단까지의 거리가 제2 임계값 이상이다. 따라서, 캐소드 전극이 같은 평면 상에서 복수 개로 분리된 전계방출 장치에서 전극 사이의 절연체에 전하가 축적됨으로써 발생하는 비정상적인 전계 방출 및 아크 발생을 막아 안정적인 동작이 가능하도록 한다. 전계, 방출, 캐소드, 애노드, 에미터
Abstract:
A matrix-addressed diode flat panel display of field emission type is described, utilizing a diode (two terminal) pixel structure. The flat panel display comprises a cathode assembly having a plurality of cathodes, each cathode including a layer of cathode conductive material and a layer of a low effective work-function material deposited over the cathode conductive material and an anode assembly having a plurality of anodes, each anode including a layer of anode conductive material and a layer of cathodoluminescent material deposited over the anode conductive material, the anode assembly located proximate the cathode assembly to thereby receive charged particle emissions from the cathode assembly, the cathodoluminescent material emitting light in response to the charged particle emissions. The flat panel display further comprises means for selectively varying field emission between the plurality of corresponding light-emitting anodes and field-emission cathodes to thereby effect an addressable grey-scale operation of the flat panel display.
Abstract:
PURPOSE: A cell driver of a field emission display is provided to obtain a gray level higher than a predetermined limit by controlling a current which is supplied to a cathode. CONSTITUTION: The device includes a cathode(10). A gate electrode(12) emits electrons from a cathode(10). A high voltage switch(14) switches a high voltage source and a ground voltage to the gate electrode(12). The high voltage switch(14) supplies a high voltage to the gate electrode for a low logic period of the main scan signal according to a main scan signal and an auxiliary scan signal. The high voltage switch(14) includes the sixth PMOS transistor(14a) coupled between a high voltage source and a node(NODE 1) and the sixth NMOS transistor(14b) coupled between the node(NODE1) and a ground voltage source. The seventh NMOS transistor(16) switches a low voltage to be supplied to the cathode(10).
Abstract:
The present invention provides an enhanced THz electromagnetic source structure achieving a very high aspect ratio of 500 to 1 of electron beam width to electron beam thickness of the electron beam moving in the direction across the grating structure while maintaining its cross-section. The structure comprises a magnetic circuit providing a unique low magnetic field slot placed in a steel core for the placement of an electron gun, thus allowing the electron beam to he focused without the interaction of a magnetic field while still supporting a high magnetic field in the grating region. Additionally, the structure comprises an electrostatic shield preventing potential difference between the anode voltage and the grounded steel core from affecting the focusing of the electron beam.
Abstract:
A high-performance electron emitter capable of emitting electrons at low voltage with high luminance and leading to further improvement of the electron emission characteristic of a Spindt-type cold cathode, a carbon nanotube, and a carbon nanofiber. The electron emitter is provided as a key device of a flat panel display, an imager, an electron beam device, a microwave traveling-wave tube, or an illuminator. A film having an electric field therein, having a thickness of below 50 nm and an electron affinity of below 4.0 eV is formed on a Spindt-type cold cathode, a carbon nanotube, a carbon nanofiber, and a metal or semiconductor substrate having an irregular surface to fabricate an electron emitter. The film is made of a compound of a nitride atom and a group III element atom, such as aluminum nitride, boron nitride, aluminum boron nitride, aluminum gallium nitride, or boron gallium nitride, boron carbon nitride, boron carbide, carbon nitride, or an oxide containing boron.
Abstract:
Apparatus and method are provided for a package structure that enables mounting of a field-emitting cathode into an electron gun. A non-conducting substrate has the cathode attached and the cathode is electrically connected to a pin through the substrate. Other pins are electrically connected to electrodes integral with the cathode. Three cathodes may be mounted on a die flag region to form an electron gun suitable for color CRTs. Accurate alignment of an emitter array to the apertures in the electron gun and other electrodes such as a focusing lens is achieved. The single package design may be used for many gun sizes. Assembly and attachment of the emitter array to the electron gun during construction of the gun can lower cost of construction.