公开(公告)号：US20030160570A1

公开(公告)日：2003-08-28

申请号：US10365944

申请日：2003-02-13

Inventor： Susumu Sasaki ,  Yoshiyuki Kaneko ,  Shigemi Hirasawa ,  Yuuichi Kijima ,  Kenji Miyata

IPC: G09G003/10

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469

Abstract: To obtain a paste for electron sources which can enhance heat resistance of carbon nanotubes, which can suppress burn-out of the carbon nanotubes even during heating at a high temperature, and can exhibit a high electron emission performance, boron (B) is added to the paste formed of the carbon nanotubes and metal. Due to the addition of boron, the oxidation of the carbon nanotubes can be suppressed, and the degradation of the electron emission characteristics and the degradation of the uniformity of the emission of electrons during the heating process such as baking can be prevented.

Abstract translation: 为了获得能够提高碳纳米管的耐热性的电子源用糊料，即使在高温加热时也能够抑制碳纳米管的烧尽，并且能够发挥高的电子发射性能，可以向硼（B）中添加硼 该糊状物由碳纳米管和金属形成。 由于添加硼，可以抑制碳纳米管的氧化，并且可以防止在诸如烘烤的加热过程中电子发射特性的劣化和电子发射均匀性的劣化。

公开(公告)号：US06554673B2

公开(公告)日：2003-04-29

申请号：US09917663

申请日：2001-07-31

Applicant: Pehr Pehrsson ,  James Butler

Inventor： Pehr Pehrsson ,  James Butler

IPC: H01J904

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30457

Abstract: A method for fabricating an electron emitter. This emitter structure may be used to form individual emitters or arrays of emitters. The method is comprised of implanting energetic ions into a diamond lattice to form cones or other continuous regions of damaged diamond. These regions are more electrically conducting than the surrounding diamond lattice, and have locally sharp tips at or near the point of entry of the ion into the diamond. The tips may then also be additionally coated with a layer of a wide band-gap semiconductor. An electrically conducting material may also be placed in proximity to the tips to generate an electric field sufficient to extract electrons from the conducting tips into either the region above the surface, or into the wide band-gap semiconductor layer in contact with the tips. Electrical contact is made to the electrically conducting damage tracks and the electrical circuit may be completed with an electrically conducting material on the surface of the wide band-gap semiconductor or diamond, or in the ambient above the surface of the emitter. The surface of the wideband gap semiconductor or diamond may be chemically modified to enhance the emission of electrons from the surface.

Abstract translation: 一种制造电子发射器的方法。 该发射器结构可以用于形成发射器的单独发射器或阵列。 该方法包括将能量离子注入到金刚石晶格中以形成损坏金刚石的锥体或其它连续区域。 这些区域比周围的金刚石晶格更具导电性，并且在离子进入金刚石的位置处或附近具有局部尖锐的尖端。 然后可以另外涂覆一层宽带隙半导体的尖端。 还可以将导电材料放置在靠近尖端处以产生足以将电子从导电尖端引入到表面上方的区域中的电场，或者与尖端接触的宽带隙半导体层中。 对导电损伤轨道进行电接触，并且电路可以在宽带隙半导体或金刚石的表面上或在发射器表面上的环境中的导电材料完成。 宽带隙半导体或金刚石的表面可以被化学修饰以增强从表面发射电子。

公开(公告)号：US20030076023A1

公开(公告)日：2003-04-24

申请号：US10252800

申请日：2002-09-24

Applicant: Matsushita Electric Works, Ltd.

Inventor： Takuya Komoda ,  Yoshiyuki Takegawa ,  Koichi Aizawa ,  Takashi Hatai ,  Tsutomu Ichihara ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Toru Baba

IPC: H01J001/00

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J9/022 ,  H01J2201/30446 ,  H01J2201/3125

Abstract: A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2), An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).

Abstract translation: 在由诸如玻璃或陶瓷基板的绝缘基板构成的基板（1）的一个主表面侧上形成下层电极（2）和由层状导电碳化物层构成的表面电极（7）。 在下电极（2）上形成非掺杂多晶硅层（3），在多晶硅层（3）上形成由氧化多孔多晶硅构成的电子迁移层（6）。 电子转移层（6）由包括多晶硅的复合纳米晶体层和与多晶硅的晶界相邻的许多纳米晶体硅构成。 当在下电极（2）和表面电极（7）之间施加电压使得表面电极（7）具有较高电位时，电子从下电极（2）向表面电极（7）注入，并且 通过电子转移层（6）通过表面电极（7）发射。

公开(公告)号：US20020117951A1

公开(公告)日：2002-08-29

申请号：US09795660

申请日：2001-02-27

Applicant: UT-BATTELLE, L.L.C.

Inventor： Vladimir I. Merkulov ,  Douglas H. Lowndes ,  Michael A. Guillorn ,  Michael L. Simpson

IPC: H01J001/02 ,  H01J001/05 ,  H01J001/38 ,  H01J019/06

CPC classification number: H01J1/3044 ,  B82Y15/00 ,  H01J9/025 ,  H01J2201/30446 ,  Y10S977/939

Abstract: Systems and methods are described for carbon tips with expanded bases. A method includes producing an expanded based carbon containing tip including: fabricating a carbon containing expanded base on a substrate; and then fabricating a carbon containing fiber on the expanded base. An apparatus includes a carbon containing expanded base coupled to a substrate; and a carbon containing fiber coupled to said carbon containing expanded base.

Abstract translation: 描述了具有扩展基底的碳尖端的系统和方法。 一种方法包括制备基于膨胀的含碳尖端，其包括：在基底上制造含碳膨胀的基底; 然后在膨胀的基底上制造含碳纤维。 一种装置包括：与基底耦合的含碳膨胀基底; 和与所述含碳膨胀基质偶联的含碳纤维。

公开(公告)号：US20020070677A1

公开(公告)日：2002-06-13

申请号：US09847420

申请日：2001-05-03

Inventor： Shuji Yamada ,  Kazuya Ishiwata ,  Tadayasu Meguro

IPC: H01J063/04

CPC classification number: H01J1/3048 ,  H01J9/022 ,  H01J2201/30446 ,  H01J2329/00

Abstract: An electron source forming substrate wherein an insulating material film is disposed on the surface of the substrate at which surface an electron-emitting device is arranged. The insulating material film contains a plurality of metallic oxide particles having an average particle size within the range of 6 nm to 60 nm as expressed in a median value, and suppresses undesirable diffusion of Na from the substrate, thereby makes stable an electron-emitting characteristics, without an adverse effect due to the Na diffusion, even elapsing longer time.

Abstract translation: 一种电子源形成基板，其中绝缘材料膜设置在基板的表面上，在该表面上布置电子发射器件。 绝缘材料膜含有以中值表示的平均粒径在6nm〜60nm的范围内的多个金属氧化物粒子，并抑制不希望的Na从衬底的扩散，从而使电子发射特性稳定 ，由于Na扩散而没有不利影响，甚至经过更长的时间。

公开(公告)号：US20020060514A1

公开(公告)日：2002-05-23

申请号：US09987862

申请日：2001-11-16

Inventor： Masayuki Nakamoto

IPC: H01J001/05 ,  H01J001/62

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469 ,  H01J2329/00 ,  Y10S977/939

Abstract: A field emission cold cathode device of a lateral type includes a cathode electrode and gate electrode disposed on a major surface of a support substrate laterally side by side. The cathode electrode and gate electrode have side surfaces which oppose each other, and an emitter is disposed on the opposite side surface of the cathode electrode. The emitter includes a metal plating layer formed on the cathode electrode, and a plurality of granular or rod-shaped micro-bodies. The micro-bodies are consisting essentially of a material selected from the group consisting of fullerenes, carbon nanotubes, graphite, a material with a low work function, a material with a negative electron affinity, and a metal material, and are supported in the metal plating layer in a dispersed state.

Abstract translation: 横向型的场致发射冷阴极器件包括侧向并排设置在支撑基板的主表面上的阴极电极和栅极电极。 阴极电极和栅电极具有彼此相对的侧表面，并且发射极设置在阴极的相对侧表面上。 发射极包括在阴极上形成的金属镀层，以及多个粒状或棒状的微型体。 微体基本上由选自富勒烯，碳纳米管，石墨，低功函数的材料，具有负电子亲和性的材料和金属材料组成的组合物组成，并且被支撑在金属中 电镀层处于分散状态。

公开(公告)号：US06387717B1

公开(公告)日：2002-05-14

申请号：US09559153

申请日：2000-04-26

Applicant: Guy T. Blalock ,  Sanh D. Tang ,  Zhaohui Huang

Inventor： Guy T. Blalock ,  Sanh D. Tang ,  Zhaohui Huang

IPC: H01L2100

CPC classification number: H01J1/304 ,  H01J1/3044 ,  H01J31/127 ,  H01J2201/30446

Abstract: The present invention relates to field emitters and methods of fabricating the same wherein the field emission tips of the field emitters are formed by utilization of a facet etch. An etch mask is patterned on a conductive substrate in the locations desired for subsequently formed field emission tips. The conductive substrate is then anisotropically etched to translate the shape of the mask into the conductive substrate which forms a vertical column from the conductive substrate. The etch mask is then removed and the vertical column is facet etched to form the field emission tip. Low work function materials may also be incorporated into the field emission tips to improve field emission tip performance by depositing a layer of low work function material on the conductive substrate prior to patterning the etch mask. Furthermore, a sacrificial layer may be utilized to assist the removal of any redeposition materials formed during the facet etch by depositing the sacrificial material over the vertical column prior to facet etching. After facet etching, the redeposition material may be removed using a known clean-up technique.

Abstract translation: 本发明涉及场发射器及其制造方法，其中通过利用小面蚀刻形成场致发射体的场发射尖端。 在随后形成的场发射尖端所需的位置中，在导电衬底上图案化蚀刻掩模。 然后各向异性地蚀刻导电衬底以将掩模的形状转移到导电衬底中，导电衬底从导电衬底形成垂直柱。 然后去除蚀刻掩模，并且垂直列被刻蚀以形成场致发射尖端。低功函数材料也可以并入场发射尖端中，以通过在低功函数材料上沉积一层低功函数材料来改善场发射尖端性能 在蚀刻掩模图案化之前的导电基板。 此外，可以利用牺牲层来帮助去除在刻面蚀刻期间形成的任何再沉积材料，在刻蚀之前，通过在垂直柱上沉积牺牲材料。 在小面蚀刻之后，可以使用已知的清理技术去除再沉积材料。

公开(公告)号：US20020053864A1

公开(公告)日：2002-05-09

申请号：US09871976

申请日：2001-06-04

Inventor： Akihiko Hosono ,  Shuhei Nakata ,  Masaaki Hiraki

IPC: H01J001/00

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469

Abstract: Obtained are a carbon thin body having a structure making it possible to produce a planar electron source in a simple manner; a process for producing the carbon thin body; and an electric field emission type electron source using the carbon thin body. A carbon thin body that has a given thickness and is in the form of a thin layer having a front surface and a back surface, wherein at least in the front surface portion a curved wall is continuous, as is viewed in plan, to form an approximately netlike structure.

Abstract translation: 获得的碳薄体具有能够以简单的方式制造平面电子源的结构; 碳薄体的制造方法; 以及使用碳薄体的电场发射型电子源。 具有给定厚度并且具有前表面和后表面的薄层形式的碳薄体，其中至少在前表面部分中弯曲壁是连续的，如在平面图中所示，以形成 大致网状结构。

公开(公告)号：US06323587B1

公开(公告)日：2001-11-27

申请号：US09130634

申请日：1998-08-06

Applicant: Tianhong Zhang ,  John K. Lee ,  Behnam Moradi

Inventor： Tianhong Zhang ,  John K. Lee ,  Behnam Moradi

IPC: H01J130

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J2201/30446

Abstract: A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.

Abstract translation: 场致发射显示装置包括形成在基板上的多个发射体。 每个发射器包括硅化钛氮化物外层，使得发射体不易劣化。 在基板和发射体上形成电介质层，并且在围绕每个发射体的电介质层中形成开口。 导电提取栅格基本上在由发射器限定的平面中形成在介质层上，并且包括围绕每个发射器的开口。 具有平坦表面的阴极发光面板平行于基板设置。

公开(公告)号：US20010040429A1

公开(公告)日：2001-11-15

申请号：US09912618

申请日：2001-07-24

Inventor： Tianhong Zhang ,  John K. Lee ,  Behnam Moradi

IPC: H01J001/62

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J2201/30446

Abstract: A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.