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    ＥＵＶ광원
    232.
    发明公开
    ＥＵＶ광원 有权
    EUV光源

    公开(公告)号：KR1020070003996A

    公开(公告)日：2007-01-05

    申请号：KR1020067020324

    申请日：2005-02-24

    Applicant: 사이머 엘엘씨

    Inventor： 파틀로윌리암엔. ,  보워링노베르트에르. ,  어쇼브알렉산더아이. ,  포멘코브이고르브이. ,  올리버아이.로저 ,  비아텔라존 ,  자크로버트엔.

    IPC: H01J35/20 ,  G03F9/00 ,  G03F7/20 ,  H01J65/04

    CPC classification number: G03F7/70033 ,  B82Y10/00 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/065 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/006 ,  H05G2/008

    Abstract: An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma (" LPP") extreme ultraviolet ("EUV") light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a focus defining a desired plasma initiation site, comprising: a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis generally perpendicular to the target stream track from a desired stream track intersecting the desired plasma initiation site. At least one target crossing detector may be aimed at the target track and detecting the passage of a plasma formation target through a selected point in the target track. A drive laser triggering mechanism utilizing an output of the target crossing detector to determine the timing of a drive laser trigger in order for a drive laser output pulse to intersect the plasma initiation target at a selected plasma initiation site along the target track at generally its closest approach to the desired plasma initiation site. A plasma initiation detector may be aimed at the target track and detecting the location along the target track of a plasma initiation site for a respective target. An intermediate focus illuminator may illuminate an aperture formed at the intermediate focus to image the aperture in the at least one imaging device. The at least one imaging device may be at least two imaging devices each providing an error signal related to the separation of the target track from the vertical centerline axis of the image of the intermediate focus based upon an analysis of the image in the respective one of the at least two imaging devices. A target delivery feedback and control system may comprise a target delivery unit; a target delivery displacement control mechanism displacing the target delivery mechanism at least in an axis corresponding to a first displacement error signal derived from the analysis of the image in the first imaging device and at least in an axis corresponding to a second displacement error signal derived from the analysis of the image in the second imaging device. ® KIPO & WIPO 2007

    Abstract translation: 公开了一种用于EUV光产生的装置和方法，其可以包括激光产生的等离子体（“LPP”）极紫外（“EUV”）光源控制系统，其包括适于递送移动等离子体引发靶的目标传送系统和EUV光收集 光学元件具有限定期望的等离子体起始位置的焦点，包括：目标跟踪和反馈系统，包括：至少一个成像装置，其提供目标流轨迹的图像作为输出，其中，所述目标流轨迹来自所述目标流轨迹的成像速度 摄像机太慢，不能成像形成被作为目标流轨迹成像的目标流的各个等离子体形成目标; 流轨迹误差检测器，从与期望的等离子体起始位置相交的期望的流轨道检测在大致垂直于目标流轨迹的至少一个轴上的目标流轨迹位置的误差。 至少一个目标交叉检测器可以瞄准目标轨道并且检测等离子体形成目标通过目标轨道中的选定点的通过。 驱动激光触发机构利用目标交叉检测器的输出来确定驱动激光触发的定时，以便驱动激光输出脉冲在等离子体引发目标处沿着目标轨道在一般最接近的等离子体起始位置处相交 接近所需的等离子体引发位点。 等离子体起始检测器可以瞄准目标轨道并且检测针对相应目标的等离子体起始位置沿着目标轨迹的位置。 中间焦点照明器可以照亮形成在中间焦点处的孔，以对至少一个成像装置中的孔进行成像。 所述至少一个成像装置可以是至少两个成像装置，每个成像装置基于对所述中间焦点的图像的图像的分析，提供与所述目标轨道与所述中间焦点的图像的垂直中心线轴线分离相关的误差信号 所述至少两个成像装置。 目标传送反馈和控制系统可以包括目标传送单元; 目标传送位移控制机构至少在对应于从第一成像装置中的图像的分析导出的第一位移误差信号的轴上移动目标传送机构，并且至少在与由第二位移误差信号 对第二成像装置中的图像进行分析。 ®KIPO＆WIPO 2007

    Method for producing a multilayer Laue lens
    234.
    发明授权
    Method for producing a multilayer Laue lens 有权

    公开(公告)号：US11789187B2

    公开(公告)日：2023-10-17

    申请号：US17453433

    申请日：2021-11-03

    Applicant: Deutsches Elektronen-Synchrotron DESY

    Inventor： Henry Chapman ,  Sasa Bajt ,  Mauro Prasciolu

    IPC: G02B5/18 ,  G21K1/06

    CPC classification number: G02B5/188 ,  G21K1/062 ,  G21K2201/061

    Abstract: A multilayer Laue lens (MLL) that can be operated over a large range of wavelengths which is achieved by providing a lens blank comprising a substrate element extending in a plane defined by orthogonal axes x, y, z, with a layered structure deposited on the upper surface with at least two different materials that are layered upon one another in an alternating manner, wherein the y-extension of the layered structure is constant along the x-axis and varies along the z-axis within a ramp section where the y-extension of the layered structure increases from a starting point, where first particles of material of the layered structure are deposited on the upper surface of the substrate element, to a saturation point, where a maximum y-extension of the layered structure is reached; and slicing a lens out of the lens blank.

    Mirror, projection objective with such mirror, and projection exposure apparatus for microlithography with such projection objective
    240.
    发明授权
    Mirror, projection objective with such mirror, and projection exposure apparatus for microlithography with such projection objective 有权
    具有这种反射镜的镜面投影物镜，以及用于具有这种投射物镜的微光刻的投影曝光装置

    公开(公告)号：US09575224B2

    公开(公告)日：2017-02-21

    申请号：US13846785

    申请日：2013-03-18

    Applicant: Carl Zeiss SMT GmbH

    Inventor： Rolf Freimann ,  Norman Baer ,  Guido Limbach ,  Thure Boehm ,  Gero Wittich

    IPC: F21V9/04 ,  F21V9/06 ,  G02B5/08 ,  G02B5/20 ,  B82Y10/00 ,  G21K1/06

    CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G03F7/70316 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/061

    Abstract: A mirror (1a; 1a′; 1b; 1b; 1c; 1c′) with a substrate (S) and a layer arrangement configured such that light (32) having a wavelength below 250 nm and incident on the mirror at at least an angle of incidence of between 0° and 30° is reflected with more than 20% of its intensity. The layer arrangement has at least one surface layer system (P′″) having a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) include a high refractive index layer (H′″) and a low refractive index layer (L′″). The layer arrangement has at least one graphene layer. Use of graphene (G, SPL, B) on optical elements reduces surface roughness to below 0.1 nm rms HSFR and/or protects the EUV element against a radiation-induced volume change of more than 1%. Graphene is also employed as a barrier layer to prevent layer interdiffusion.

    Abstract translation: 具有衬底（S）的反射镜（1a; 1a'; 1b; 1b; 1c; 1c'）和被配置为使得波长低于250nm的光（32）至少以角度入射到反射镜上的层 0°和30°之间的发生率反映在其强度的20％以上。 层布置具有至少一个表层系统（P“），其具有至少两个单独层的周期（P3）的周期性序列，其中周期（P3）包括高折射率层（H”“）和 低折射率层（L“”）。 层布置具有至少一个石墨烯层。 石墨烯（G，SPL，B）在光学元件上的使用将表面粗糙度降低到低于0.1nm rms HSFR，和/或保护EUV元件免受辐射诱导的体积变化超过1％。 石墨烯也被用作阻挡层以防止层相互扩散。

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