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    표면전자 방출소자 및 그를 구비한 디스플레이 장치
    231.
    发明公开
    표면전자 방출소자 및 그를 구비한 디스플레이 장치 失效
    表面电子发射装置和具有该表面电极的显示单元

    公开(公告)号：KR1020070066117A

    公开(公告)日：2007-06-27

    申请号：KR1020050126912

    申请日：2005-12-21

    Applicant: 삼성전자주식회사

    Inventor： 문창욱 ,  이상목 ,  부림 ,  이승운 ,  이은홍 ,  조중래

    IPC: H01J1/312 ,  C01B31/02

    CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/3125

    Abstract: A surface electron emission device and a display device having the same are provided to improve electron emission efficiency by forming a fullerene layer having high tension on an upper electrode. A surface electron emission device includes a lower electrode(312), an insulating layer(314), an upper electrode(319), and a nano-structure layer(320). The lower electrode, the insulating layer, and the upper electrode are laminated sequentially. The nano-structure layer is formed on electrode layer. The nano-structure layer is formed with a carbon nano-structure layer. The carbon nano-structure layer is formed with a fullerene layer. The nano-structure layer has a thickness of 0.2 to 20nm.

    Abstract translation: 提供一种表面电子发射器件及其显示器件，以通过在上部电极上形成具有高张力的富勒烯层来提高电子发射效率。 表面电子发射器件包括下电极（312），绝缘层（314），上电极（319）和纳米结构层（320）。 依次层叠下电极，绝缘层和上电极。 纳米结构层形成在电极层上。 纳米结构层由碳纳米结构层形成。 碳纳米结构层由富勒烯层形成。 纳米结构层的厚度为0.2〜20nm。

    전자원 장치 및 표시 장치
    232.
    发明公开
    전자원 장치 및 표시 장치 失效
    电子源设备和显示器

    公开(公告)号：KR1020060017740A

    公开(公告)日：2006-02-27

    申请号：KR1020057009334

    申请日：2003-11-25

    Applicant: 가부시끼가이샤 도시바 ,  후지시끼소 가부시끼 가이샤

    Inventor： 이또다께오 ,  마쯔다,히데미 ,  이나무라,마사아끼 ,  다나까,하지메 ,  사까이,가즈오

    IPC: H01J1/304

    CPC classification number: H01J31/127 ,  B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J2201/3125

    Abstract: An electron source device comprising a porous layer (for example, a porous alumina layer), which is composed of an insulator and has many microholes extending in a direction perpendicular to the major surface, and first and second conductor layers disposed on both sides of the porous layer is characterized in that the current density (I/S) is 1 muA/cm2 or higher when a direct current voltage is applied between the second conductor layer and the first conductor layer while using the second conductor layer as an anode. In this case, S represents the overlapping area among the first conductor layer, the second conductor layer and the porous layer. Consequently, an electron source device having a high electron emission ability and a long life even when the degree of vacuum is low can be obtained at low cost. A display having a high luminous efficiency and high reliability can be realized by using this electron source device.

    Abstract translation: 一种电子源装置，包括由绝缘体构成并具有沿垂直于主表面的方向延伸的许多微孔的多孔层（例如，多孔氧化铝层）以及设置在主表面两侧的第一和第二导体层 多孔层的特征在于，当使用第二导体层作为阳极时，在第二导体层和第一导体层之间施加直流电压时，电流密度（I / S）为1μA/ cm 2以上。 在这种情况下，S表示第一导体层，第二导体层和多孔层之间的重叠面积。 因此，即使在真空度低的情况下也能够以低成本获得具有高电子发射能力和长寿命的电子源装置。 可以通过使用该电子源装置来实现具有高发光效率和高可靠性的显示器。

    전계 방사형 전자원의 제조방법
    233.
    发明授权
    전계 방사형 전자원의 제조방법 失效
    用于制造电场发射型电子源的方法

    公开(公告)号：KR100356244B1

    公开(公告)日：2002-10-12

    申请号：KR1020010060008

    申请日：2001-09-27

    Applicant: 파나소닉 전공 주식회사

    Inventor： 코모다타쿠야 ,  이치하라쯔토무 ,  아이자와코이치 ,  코시다노부요시

    IPC: H01J1/304 ,  H01J9/02

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/025 ,  H01J2201/3125 ,  Y10S977/939

    Abstract: 전자를안정되게고효율로방출할수 있는저가의전계방사형전자원(電子源) 및그 제조방법을제공한다. n형실리콘기판(1, 101)의주 표면측에강전계드리프트(drift)부 (6, 106)가형성되고, 강전계드리프트부(6, 106)상에금박막으로이루어진표면전극(7, 107)이형성된다. 또, n형실리콘기판(1, 101)의뒷면에는오믹(ohmic)전극(2, 102)이형성된다. 이전계방사형전자원(11, 110)에서는표면전극 (7, 107)을진공중에배치하고, 표면전극(7,107)을오믹전극(2, 102)에대해양극(+)으로하여직류전압을인가함으로써, n형실리콘기판(1, 101)에서주입된전자가강전계드리프트부(6, 106)를드리프트하여표면전극(7, 107)을통해방출된다. 강전계드리프트부(106)는, 도전성기판인 n형실리콘기판(101)의두께방향으로직교하는단면이망목상(網目狀)으로형성되어상기전자가드리프트되는드리프트부(161)와, 망목내에채워지며드리프트부(161)보다도열전도성이좋은방열부(162)로이루어진다.

    전계 방사형 전자원
    234.
    发明授权
    전계 방사형 전자원 失效
    电场发射型电子源

    公开(公告)号：KR100338140B1

    公开(公告)日：2002-05-24

    申请号：KR1019990041011

    申请日：1999-09-22

    Applicant: 파나소닉 전공 주식회사

    Inventor： 코모다타쿠야 ,  이치하라쯔토무 ,  아이자와코이치 ,  코시다노부요시

    IPC: H01J1/30 ,  H01L33/36

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/025 ,  H01J2201/3125 ,  Y10S977/939

    Abstract: 전자를안정되게고효율로방출할수 있는저가의전계방사형전자원(電子源) 및그 제조방법을제공한다. n형실리콘기판(1, 101)의주 표면측에강전계드리프트(drift)부 (6, 106)가형성되고, 강전계드리프트부(6, 106)상에금박막으로이루어진표면전극(7, 107)이형성된다. 또, n형실리콘기판(1, 101)의뒷면에는오믹(ohmic)전극(2, 102)이형성된다. 이전계방사형전자원(11, 110)에서는표면전극 (7, 107)을진공중에배치하고, 표면전극(7,107)을오믹전극(2, 102)에대해양극(+)으로하여직류전압을인가함으로써, n형실리콘기판(1, 101)에서주입된전자가강전계드리프트부(6, 106)를드리프트하여표면전극(7, 107)을통해방출된다. 강전계드리프트부(106)는, 도전성기판인 n형실리콘기판(101)의두께방향으로직교하는단면이망목상(網目狀)으로형성되어상기전자가드리프트되는드리프트부(161)와, 망목내에채워지며드리프트부(161)보다도열전도성이좋은방열부(162)로이루어진다.

    Image display device
    240.
    发明专利
    Image display device 审中-公开
    图像显示设备

    公开(公告)号：JP2007035614A

    公开(公告)日：2007-02-08

    申请号：JP2006111620

    申请日：2006-04-14

    Applicant: Hitachi Displays Ltd ,  Hitachi Ltd ,  株式会社 日立ディスプレイズ ,  株式会社日立製作所

    Inventor： KUSUNOKI TOSHIAKI ,  SAGAWA MASAKAZU ,  TSUJI KAZUTAKA ,  HIRANO TATSUMI ,  NISHIMURA ETSUKO ,  MIKAMI YOSHIAKI ,  KANEKO YOSHIYUKI ,  NAKAMURA TOMOKI ,  AOTO KATSUHIDE

    IPC: H01J31/12 ,  H01J1/312 ,  H01J29/04

    CPC classification number: H01J29/481 ,  B82Y10/00 ,  H01J2201/30446 ,  H01J2201/3125

    Abstract: PROBLEM TO BE SOLVED: To provide an electron source which is a thin film type electron source having a lower electrode and an upper electrode and an electron acceleration layer comprising an insulator or a semiconductor between them starting a diode current at lower threshold voltage than in the prior art and capable of securing a diode current required for electron emission even at low voltage, and to realize an image display device having a long service life and low power.
    SOLUTION: It is realized by using noble metal of a platinum group (8 group) or an Ib group containing alkali metal oxide, alkaline earth metal compound and a transition-metal compound of 3 to 7 group from an interface with the electron acceleration layer to the surface or their laminated film, mixed film or alloy film as the upper electrode.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供一种电子源，其是具有下电极和上电极的薄膜型电子源和包括绝缘体或电子加速层的电子加速层，它们以较低的阈值电压启动二极管电流 并且即使在低电压下也能够确保电子发射所需的二极管电流，并且实现具有长的使用寿命和低功率的图像显示装置。 解决方案：通过使用含有碱金属氧化物，碱土金属化合物和3〜7族的过渡金属化合物的铂族（8族）或Ib族的贵金属与电子的界面 加速层到表面或其层压膜，混合膜或合金膜作为上电极。 版权所有（C）2007，JPO＆INPIT

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