中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

544 records (took 0.024 seconds)

    Scanning mirror device
    261.
    发明公开
    Scanning mirror device 审中-公开
    Abtastspiegelvorrichtung

    公开(公告)号：EP2749526A1

    公开(公告)日：2014-07-02

    申请号：EP13191191.9

    申请日：2013-10-31

    Applicant: Funai Electric Co., Ltd.

    Inventor： Kugo, Kouichi

    IPC: B81B3/00 ,  G02B26/08 ,  G02B26/10

    CPC classification number: G02B26/101 ,  B81B3/007 ,  B81B2201/032 ,  B81B2201/042 ,  B81B2203/058 ,  G02B26/0841

    Abstract: A scanning mirror device includes a mirror (1), a first supporting body (2) that supports the mirror (1), a plurality of securing materials (5) that has higher rigidity than the first supporting body (2) and supports the first supporting body (2), a reinforcing material (6) that has higher rigidity than the first supporting body (2) and is attached to the plurality of securing materials (5) on a surface different from a surface on which the mirror (1) is disposed, and a first driving portion (2a, 2b) configured to deform the first supporting body (2) so as to displace the mirror (1) around a first rotational axis (X).

    Abstract translation: 扫描镜装置包括反射镜（1），支撑反射镜（1）的第一支撑体（2），具有比第一支撑体（2）更高的刚性的多个固定材料（5） 支撑体（2），具有比第一支撑体（2）更高刚性的加强材料（6），并且在与反射镜（1）的表面不同的表面上附接到多个固定材料（5） 以及第一驱动部（2a，2b），其构造成使所述第一支撑体（2）变形，以使所述反射镜（1）围绕第一旋转轴线（X）移位。

    FERROELECTRIC DEVICE
    262.
    发明公开
    FERROELECTRIC DEVICE 审中-公开
    FERROELEKTRISCHE VORRICHTUNG

    公开(公告)号：EP2562837A1

    公开(公告)日：2013-02-27

    申请号：EP11771971.6

    申请日：2011-04-18

    Applicant: Panasonic Corporation

    Inventor： OGAWA, Junya ,  YAMAUCHI, Norihiro ,  MATSUSHIMA, Tomoaki ,  AIZAWA, Koichi

    IPC: H01L41/113 ,  B81B7/02 ,  G01J1/02 ,  H01L41/08 ,  H01L41/18 ,  H01L41/22 ,  H01L41/24 ,  G01P15/09

    CPC classification number: H01L41/1136 ,  B81B2201/032 ,  B81C1/00658 ,  G01J5/04 ,  G01J5/046 ,  G01J5/34 ,  G01P15/09 ,  G01P2015/0828 ,  H01L37/02 ,  H01L41/0815 ,  H02N2/186

    Abstract: A ferroelectric device comprises: a silicon substrate (a first substrate) 10; a lower electrode (a first electrode) 14a formed on one surface side of first substrate 10; a ferroelectric film 14b formed on a surface of lower electrode 14a opposite to first substrate 10 side; and an upper electrode (a second electrode) 14c formed on a surface of ferroelectric film 14b opposite to lower electrode 14a side. The ferroelectric film 14b is formed of a ferroelectric material with a lattice constant difference from silicon. The ferroelectric device further comprises a shock absorbing layer 14d formed of a material with better lattice matching with ferroelectric film 14b than silicon and provided directly below the lower electrode 14a. The first substrate 10 is provided with a cavity 10a that exposes a surface of shock absorbing layer 14d opposite to lower electrode 14a side.

    Abstract translation: 铁电体器件包括：硅衬底（第一衬底）10; 形成在第一基板10的一个表面侧的下电极（第一电极）14a; 形成在与第一基板10侧相反的下电极14a的表面上的铁电体膜14b; 以及形成在与下电极14a侧相对的铁电体膜14b的表面上的上电极（第二电极）14c。 铁电体膜14b由与硅的晶格常数不同的铁电体形成。 铁电体元件还包括由比铁强的铁电体膜14b具有更好的晶格匹配的材料形成的冲击吸收层14d，并且直接设置在下电极14a的下方。 第一基板10设置有空腔10a，其暴露与下电极14a侧相对的减震层14d的表面。

    MEMS DEVICE AND METHOD OF FABRICATION
    263.
    发明公开
    MEMS DEVICE AND METHOD OF FABRICATION 有权
    MEMS组件和方法

    公开(公告)号：EP2504273A1

    公开(公告)日：2012-10-03

    申请号：EP10785498.6

    申请日：2010-11-22

    Applicant: BAE Systems Plc.

    Inventor： HUCKER, Martyn John ,  STURLAND, Ian Michael ,  ELEY, Rebecka

    IPC: B81B3/00 ,  H01L41/09 ,  H01L41/22

    CPC classification number: H01L41/313 ,  B81B3/0021 ,  B81B2201/032 ,  B81B2203/0118 ,  B81B2203/051 ,  H01L41/096

    Abstract: A MEMS device (e.g. a piezoelectric actuator), and method of fabrication thereof, having a moveable portion comprising a layer of material (6) (e.g. a substrate layer formed from a substrate wafer) having relatively low rigidity in a direction in the plane of a surface of the layer of material (6), and relatively high rigidity in a direction through the plane; wherein the relatively low rigidity is provided by ridges and grooves (60) in a further surface of the layer of material (6), the further surface of the material (6) being substantially perpendicular to the direction in the plane. The MEMS device may comprise a layer of piezoelectric material (2) bonded to the surface of the layer of material (6). Actuation of the MEMS device (e.g. actuation in the plane of the surface of the layer of material (6)) may be performed by applying an electrical field across the piezoelectric material.

    MEMS device and method of fabrication
    265.
    发明公开
    MEMS device and method of fabrication 审中-公开
    MEMS-Bauelement und Herstellungsverfahren

    公开(公告)号：EP2325910A1

    公开(公告)日：2011-05-25

    申请号：EP09176927.3

    申请日：2009-11-24

    Applicant: BAE Systems PLC

    Inventor： The designation of the inventor has not yet been filed

    IPC: H01L41/09 ,  H01L41/22 ,  B81B3/00

    CPC classification number: H02N2/043 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/051 ,  B81C1/00142 ,  H01L41/0933 ,  H01L41/313

    Abstract: A MEMS device, and method of fabrication thereof, comprising: a wall arranged as a closed loop (for example, comprising a plurality of interconnected lengths (11-18)); and a bridging portion (54) having two ends and an intermediate portion between these ends; the bridging portion (54) is connected at one end to a first portion of the wall and at the other end to a second portion of the wall non-contiguous to the first; whereby when the intermediate portion is displaced in a direction through a plane defined between the two ends, the portions of the wall connected to the bridging portion (54) are each displaced in a respective direction in the plane, and at least one further portion of the wall is displaced in a direction that is in the plane and that is different to the directions that the two portions connected to the bridging portion (54) are displaced in.

    Abstract translation: MEMS器件及其制造方法，包括：布置为闭环的壁（例如，包括多个互连长度（11-18））; 以及桥接部分（54），其具有两个端部和在这些端部之间的中间部分; 桥接部分（54）的一端连接到壁的第一部分，而另一端连接到不与第一部分相邻的壁的第二部分; 由此当中间部分在通过限定在两端之间的平面的方向上移位时，连接到桥接部分（54）的壁的部分各自在平面中沿相应的方向移动，并且至少另外一部分 壁沿着平面内的方向移动，并且不同于连接到桥接部分（54）的两个部分移位的方向。

    MEMS device and method of fabrication
    266.
    发明公开
    MEMS device and method of fabrication 审中-公开
    MEMS器件和制造方法

    公开(公告)号：EP2325909A1

    公开(公告)日：2011-05-25

    申请号：EP09176926.5

    申请日：2009-11-24

    Applicant: BAE Systems PLC

    Inventor： The designation of the inventor has not yet been filed

    IPC: H01L41/09 ,  B81B3/00 ,  H01L41/22

    CPC classification number: B81B3/0021 ,  B81B2201/032 ,  B81B2203/0118 ,  B81B2203/051 ,  H01L41/096 ,  H01L41/313

    Abstract: A MEMS device (e.g. a piezoelectric actuator), and method of fabrication thereof, having a moveable portion comprising a layer of material (6) (e.g. a substrate layer formed from a substrate wafer) having relatively low rigidity in a direction in the plane of a surface of the layer of material (6), and relatively high rigidity in a direction through the plane; wherein the relatively low rigidity is provided by ridges and grooves (60) in a further surface of the layer of material (6), the further surface of the material (6) being substantially perpendicular to the direction in the plane. The MEMS device may comprise a layer of piezoelectric material (2) bonded to the surface of the layer of material (6). Actuation of the MEMS device (e.g. actuation in the plane of the surface of the layer of material (6)) may be performed by applying an electrical field across the piezoelectric material.

    Abstract translation: 一种具有可移动部分的MEMS器件（例如压电致动器）及其制造方法，所述可移动部分包括在平面方向上具有相对低刚性的材料层（6）（例如，由衬底晶片形成的衬底层） 所述材料层（6）的表面以及在穿过所述平面的方向上的相对高的刚性; 其中所述较低刚性由所述材料层（6）的另一表面中的脊和凹槽（60）提供，所述材料（6）的另一表面基本垂直于所述平面中的方向。 MEMS器件可以包括粘合到材料层（6）的表面的压电材料层（2）。 MEMS器件的致动（例如，在材料层（6）的表面的平面中的致动）可以通过在压电材料上施加电场来执行。

    MECHANICAL STRUCTURE INCLUDING A LAYER OF POLYMERISED LIQUID CRYSTAL AND METHOD OF MANUFACTURING SUCH
    270.
    发明公开
    MECHANICAL STRUCTURE INCLUDING A LAYER OF POLYMERISED LIQUID CRYSTAL AND METHOD OF MANUFACTURING SUCH 有权
    根据上述制造的聚合液晶层和过程的机械结构

    公开(公告)号：EP1714265A1

    公开(公告)日：2006-10-25

    申请号：EP05702811.0

    申请日：2005-01-27

    Applicant: Koninklijke Philips Electronics N.V.

    Inventor： BROER, Dirk, J. ,  DE WITZ, Christiane, M., R. ,  MOL, Grietje, N. ,  PENTERMAN, Roel

    IPC: G09F9/37 ,  B81B3/00 ,  B81B7/04 ,  G02B26/02

    CPC classification number: G02B26/02 ,  B81B3/0024 ,  B81B2201/032 ,  B81B2201/047 ,  Y10T156/11

    Abstract: A mechanical structure comprises an element which is moveable by non­mechanical means, such as heat or radiation, between a first state having a first shape and a second state having a second shape different. To this end, the element includes a layer of oriented polymerized liquid crystal which exhibits an anisotropic expansion when subjected to such means. In order to facilitate manufacture the element is positioned on a substrate which has a region of high adhesiveness and a region of low adhesiveness for polymerized liquid crystal. To manufacture such structures a layer of oriented polymerizable liquid crystal is formed on a substrate (201) which is provided with a patterned surface that provides adhesive regions (204) with high adhesiveness to polymerized liquid crystal and non­adhesive regions (203) with low adhesiveness to polymerized liquid crystal. After polymerization, for example a thermal shock is applied which causes the layer of polymerized liquid crystal to delaminate at the non-adhering region while remaining fixed to the adhesive regions. Thus, the method does not require time-consuming under-etching steps.

Patent Agency Ranking