Abstract:
A semiconductor device includes a semiconductor element, a circuit board, metal wires, and an expanding member. The circuit board has an upper surface and a lower surface opposite the upper surface. The metal wires arc formed on at least one of the upper surface and the lower surface. At least two connection terminals are formed in a terminal formation surface of the semiconductor element which is disposed so as to face the upper surface of the circuit board. The expanding member is fixed to the terminal formation surface of the semiconductor element, has a larger coefficient of linear thermal expansion than the semiconductor element, and has a size larger than the interval between adjacent two of the at least two connection terminals.
Abstract:
A power module substrate includes an insulating layer, a circuit layer that is formed on a first surface of the insulating layer, and a metal layer that is formed on a second surface of the insulating layer, in which a first base layer is laminated on a surface of the metal layer on the opposite side of the surface to which the insulating layer is provided, and the first base layer has: a first glass layer that is formed at the interface with the metal layer; and a first Ag layer that is laminated on the first glass layer.
Abstract:
A method for reducing warpage on an organic substrate. The method includes: preparing an organic substrate, which includes (i) a core layer having an organic material, (ii) a first buildup layer on a front surface of the core layer, and (iii) a second buildup layer on a back surface of the core layer, measuring warpage of the organic substrate, calculating a thickness of a correction layer for reducing the warpage using properties of constituent materials including the coefficient of thermal expansion (CTE) and the Young's modulus of the core layer, and CTEs and the Young's modulus of the first and the second buildup layers, and forming at least one correction layer having the thickness on at least one part of surfaces of the first buildup layer and the second buildup layer. A system and an organic substrate is also provided.
Abstract:
According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.
Abstract:
Printed circuit boards (PCBs) can be designed to have dynamic warp characteristics complimentary to those of an attached component. A PCB and an attached component can be designed to dynamically warp, during a thermal excursion, in the same direction and with approximately the same magnitude of warp. Warp characteristics of the PCB and the attached component can be determined by the vertical thickness of conductor and dielectric layers, by the wiring density and number of conductor layers. Warp characteristics can also be at least partially determined by the arrangement/ordering of conductor and dielectric layers, by dimensions of a sash structure surrounding a component outline and by dimensions of a prepreg layer applied to an existing design. Such a prepreg layer can cover a portion or an entirety of one of the PCBs planar surfaces.
Abstract:
A substrate includes a base layer, first and second circuit layers both coupled to the base layer, a third circuit layer, a fourth circuit layer and two solder resist layers. The first/second circuit layer defines a first/second opening. The third and fourth circuit layers are located at two sides of the first and second circuit layers. The solder resist layers cover outer faces of the third and fourth circuit layers. Each solder resist layer defines a window. The first opening is deviated from the second opening. The third and fourth circuit layers each have a portion exposed to the window to be a solder pad. The first circuit layer and the third circuit layer have a total thickness no more than that of the second circuit layer and the fourth circuit layer. A chip package with the substrate and a method for manufacturing the substrate are also provided.
Abstract:
A method of manufacturing a multi-layer circuit board includes: forming a first circuit layer on a first surface of a first prepreg; stacking a second prepreg on a first surface of the first circuit layer; and forming at least one of a second or a third circuit layer on at least one of a first surface of the second prepreg and a second surface opposite of the first surface of the first prepreg, wherein, in the stacking of the first prepreg, the first prepreg and the second prepreg are semi-cured.
Abstract:
The present invention provides an insulating layer for printed circuit boards having a difference of within 20% between the flexural modulus at 25° C. and the flexural modulus under heat at 250° C.
Abstract:
A printed circuit board and a method of manufacturing the same are provided. The printed circuit board includes a core substrate having a cavity formed therein and a dummy chip inserted in the cavity.
Abstract:
A multi-layer printed circuit board comprises: a core comprising a core insulation layer and traces formed on two sides of the core insulation layer; a plurality of insulation layers sequentially formed at two sides of the core; and a plurality of trace layers respectively formed between two insulation layers and on the outmost insulation layers; wherein the core insulation layer contains a resin material different from that of the insulation layers, such that the core insulation layer has a warpage characteristic lower than that of the insulation layers.