公开(公告)号：KR1020060097070A

公开(公告)日：2006-09-13

申请号：KR1020067016824

申请日：2003-12-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 와카바야시사토시 ,  오카베신야 ,  무라카미세이시 ,  모리시마마사토 ,  다다구니히로

IPC: H01L21/205 ,  C23C16/46 ,  H01L21/00 ,  H01L21/02

CPC classification number: H01L21/67109 ,  C23C16/4581 ,  C23C16/46 ,  H01L21/28556

Abstract: A susceptor device is provided in a film- forming vessel (4) for semiconductor processing. The susceptor device includes a susceptor (16) having a top surface on which a wafer (W) to be processed is placed and a side surface extending downward from the top surface and a heater (18) provided in the susceptor (16) and serving to heat the wafer (W) through the top surface. The top and side surfaces of the susceptor (16) is coated with a CVD pre-coat layer (28). The pre-coat layer (28) has a thickness great enough to substantially saturate the amount of heat originated from the heater (18) and radiated from the top and side surfaces of the susceptor (16).

Abstract translation: 在用于半导体处理的成膜容器（4）中设置感受器装置。 所述基座装置包括：基座（16），其具有顶面，待处理的晶片（W）被放置在所述上​​表面上;从所述顶面向下延伸的侧面和设置在所述基座中的加热器， 以通过顶表面来加热晶片（W）。 基座（16）的顶表面和侧表面涂覆有CVD预涂层（28）。 预涂层（28）的厚度足够大以使来自加热器（18）的热量基本饱和并从基座（16）的顶表面和侧表面辐射。

公开(公告)号：KR1020060041306A

公开(公告)日：2006-05-11

申请号：KR1020067002771

申请日：2004-05-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 무라카미세이시 ,  모리시마마사토 ,  나루시마겐사쿠

IPC: H01L21/285 ,  C23C16/42

CPC classification number: H01L21/28518 ,  C23C16/08 ,  C23C16/56

Abstract: A titanium silicide film (4) is formed on an Si wafer (1). First, an Si wafer (1) is processed by plasma using high frequency wave. Next, a Ti-containing material gas is supplied onto the plasma-processed Si-containing portion to generate plasma and form a Ti film, and a titanium silicide film (4) is formed by the reaction between the formed Ti film and Si in the Si-containing portion. The Si wafer (1) is plasma-processed while a DC bias voltage (Vdc) of at least 200 V in absolute value is being applied to the Si wafer (1).

Abstract translation: 在Si晶片（1）上形成硅化钛膜（4）。 首先，使用高频波等离子体处理Si晶片（1）。 接下来，将含Ti材料气体供给到等离子体处理的含Si部分上以产生等离子体并形成Ti膜，并且通过在形成的Ti膜和Si之间的反应形成硅化钛膜（4） 含Si部分。 将Si晶片（1）进行等离子体处理，同时将绝对值为至少200V的直流偏置电压（Vdc）施加到Si晶片（1）。

公开(公告)号：KR1020010088407A

公开(公告)日：2001-09-26

申请号：KR1020010011430

申请日：2001-03-06

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 모리시마마사토 ,  오시마야스히로

IPC: H01L21/205

CPC classification number: C23C16/4404

Abstract: PURPOSE: To provide a CVD film deposition method by which the peeling of a film in the inner wall of a chamber or a member in the chamber can effectively be prevented at a low cost. CONSTITUTION: The inside of a chamber 11 is fed with gas for passivation in a state in which the body to be treated is not present to deposit a passivation film on the surface of the inner wall of the chamber 11 and/or a member 20 in the chamber, successively, the inside of the chamber is fed with gas for precoat in a state in which the body to be treated is not present to deposit a precoat film on the surface of the passivation film, after that, the inside of the chamber 11 is charged with the body to be treated, the inside of the chamber 11 is fed with gas for film deposition, and, the body W to be treated is subjected to film deposition treatment.

Abstract translation: 目的：提供一种CVD膜沉积方法，通过该方法可以以低成本有效地防止室内壁或室内部件上的膜的剥离。 构成：腔室11的内部在被处理体不存在的状态下供给用于钝化的气体，以将钝化膜沉积在腔室11的内壁表面和/或构件20的表面上 在腔室内连续地供给预处理气体，在待处理体不存在的状态下，在钝化膜的表面上沉积预涂膜，此后，腔室内部 对被处理体11进行充填，向室内供给用于成膜的气体，对被处理体W进行成膜处理。