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公开(公告)号：KR101787806B1
公开(公告)日：2017-10-18
申请号：KR1020140007139
申请日：2014-01-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/285 , H01L21/28 , H01L21/02 , C23C16/34 , C23C16/44 , C23C16/56 , H01L21/033 , H01L21/311 , H01L21/3205 , H01L21/321
CPC classification number: C23C16/56 , C23C16/34 , C23C16/4404 , C23C16/4405 , H01L21/0332 , H01L21/31144 , H01L21/3205 , H01L21/321 , H01L21/76856
Abstract: 플라즈마 CVD법에의해 TiN막을성막할때, 성막매수가증가해도파티클의발생을억제할수 있는 TiN막의성막방법을제공한다. 처리용기내에피처리기판을반입하고, Ti 함유가스및 질화가스를처리용기내에공급함과아울러, 이들가스의플라즈마를생성해서피처리기판의표면에 TiN막을성막하는공정을, 복수의피처리기판에대해반복해서행하는 TiN막의성막방법에있어서, 소정매수의피처리기판에대해 TiN막을성막한후, 처리용기내에피처리기판이존재하지않는상태에서, 처리용기내에 Ti 함유가스를포함하는처리가스를공급함으로써 Ti막을형성하는 Ti막형성공정을 1회이상행한다.
Abstract translation: 本发明提供一种TiN膜的形成方法，即使通过等离子体CVD法形成TiN膜时膜的个数增加，也能够抑制粒子的产生。 向处理容器内供给外延基板，向处理容器内供给含Ti气体和氮化气体，通过产生这些气体的等离子体，在被处理基板的表面形成TiN膜的工序， 在预定数量的待处理衬底上形成TiN膜，然后在处理容器中不存在epi处理器板的状态下向处理容器中供应含有含Ti气体的处理气体 用于形成Ti膜的Ti膜形成步骤至少执行一次。
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公开(公告)号：KR1020140094464A
公开(公告)日：2014-07-30
申请号：KR1020140007139
申请日：2014-01-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/285 , H01L21/28 , H01L21/02 , C23C16/34 , C23C16/44 , C23C16/56 , H01L21/033 , H01L21/311 , H01L21/3205 , H01L21/321
CPC classification number: C23C16/56 , C23C16/34 , C23C16/4404 , C23C16/4405 , H01L21/0332 , H01L21/31144 , H01L21/3205 , H01L21/321 , H01L21/76856 , H01L21/28556 , H01L21/02274 , H01L21/28088
Abstract: Provided is a TiN film forming method in which the generation of particles can be suppressed during the formation of TiN films using a plasma CVD scheme even if the number of substrates subjected to the TiN film formation is increased. The TiN film forming method repeatedly performs, for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying Ti-containing gas and nitriding gas into the processing chamber, and forming the TiN film on a surface of the substrate by generating plasma of the supplied gas, wherein the method includes a Ti film forming step of forming the Ti film by supplying processing gas containing the Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates, and the method performs the Ti film forming step at least once.
Abstract translation: 提供一种TiN膜形成方法，其中即使经历TiN膜形成的基板的数量增加，也可以使用等离子体CVD方法在形成TiN膜期间抑制颗粒的产生。 对于多个待处理基板，TiN膜形成方法重复执行将各基板加载到处理室中的步骤，将含Ti气体和氮化气体供给到处理室中，并且在该表面上形成TiN膜 通过产生供给气体的等离子体的方法，其中该方法包括通过在处理室中不存在基板的状态下将含有含Ti气体的处理气体供给到处理室来形成Ti膜的Ti膜形成步骤， 在预定数量的基板上形成TiN膜，该方法至少进行一次Ti膜形成工序。
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公开(公告)号：KR100892789B1
公开(公告)日：2009-04-10
申请号：KR1020057005619
申请日：2003-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/285 , H01L21/68
CPC classification number: H01L21/67109 , C23C16/4581 , C23C16/46 , H01L21/28556
Abstract: 반도체 처리용의 성막 처리 용기(4)내에 재치대 장치가 배설된다. 재치대 장치는 피처리 기판(W)을 재치하는 상면 및 상면으로부터 하강하는 측면을 갖는 재치대(16)와, 재치대(16)내에 배설되고, 또한 그 상면을 거쳐서 기판(W)을 가열하는 히터(18)를 포함한다. 재치대(16)의 상면 및 측면을 CVD 프리코트층(28)이 피복한다. 프리코트층(28)은 히터(18)의 가열에 유래하는 재치대(16)의 상면 및 측면으로부터의 복사열량을 실질적으로 포화시키는 두께 이상의 두께를 갖는다.
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公开(公告)号：KR1020100049704A
公开(公告)日：2010-05-12
申请号：KR1020107009366
申请日：2003-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/285 , H01L21/68
CPC classification number: H01L21/67109 , C23C16/4581 , C23C16/46 , H01L21/28556
Abstract: A susceptor device is provided in a film- forming vessel (4) for semiconductor processing. The susceptor device includes a susceptor (16) having a top surface on which a wafer (W) to be processed is placed and a side surface extending downward from the top surface and a heater (18) provided in the susceptor (16) and serving to heat the wafer (W) through the top surface. The top and side surfaces of the susceptor (16) is coated with a CVD pre-coat layer (28). The pre-coat layer (28) has a thickness great enough to substantially saturate the amount of heat originated from the heater (18) and radiated from the top and side surfaces of the susceptor (16).
Abstract translation: 在用于半导体处理的成膜容器（4）中设置感受器装置。 所述基座装置包括：基座（16），其具有顶面，待处理的晶片（W）被放置在所述上表面上;从所述顶面向下延伸的侧面和设置在所述基座中的加热器， 以通过顶表面来加热晶片（W）。 基座（16）的顶表面和侧表面涂覆有CVD预涂层（28）。 预涂层（28）的厚度足够大以使来自加热器（18）的热量基本饱和并从基座（16）的顶表面和侧表面辐射。
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公开(公告)号：KR1020080068148A
公开(公告)日：2008-07-22
申请号：KR1020087015988
申请日：2003-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/67109 , C23C16/4581 , C23C16/46 , H01L21/28556
Abstract: A susceptor device is provided in a film- forming vessel (4) for semiconductor processing. The susceptor device includes a susceptor (16) having a top surface on which a wafer (W) to be processed is placed and a side surface extending downward from the top surface and a heater (18) provided in the susceptor (16) and serving to heat the wafer (W) through the top surface. The top and side surfaces of the susceptor (16) is coated with a CVD pre-coat layer (28). The pre-coat layer (28) has a thickness great enough to substantially saturate the amount of heat originated from the heater (18) and radiated from the top and side surfaces of the susceptor (16).
Abstract translation: 在用于半导体处理的成膜容器（4）中设置感受器装置。 所述基座装置包括：基座（16），其具有顶面，待处理的晶片（W）被放置在所述上表面上;从所述顶面向下延伸的侧面和设置在所述基座中的加热器， 以通过顶表面来加热晶片（W）。 基座（16）的顶表面和侧表面涂覆有CVD预涂层（28）。 预涂层（28）的厚度足够大以使来自加热器（18）的热量基本饱和并从基座（16）的顶表面和侧表面辐射。
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Patent Agency Ranking
公开(公告)号：KR1020060097070A
公开(公告)日：2006-09-13
申请号：KR1020067016824
申请日：2003-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , C23C16/46 , H01L21/00 , H01L21/02
CPC classification number: H01L21/67109 , C23C16/4581 , C23C16/46 , H01L21/28556
Abstract: A susceptor device is provided in a film- forming vessel (4) for semiconductor processing. The susceptor device includes a susceptor (16) having a top surface on which a wafer (W) to be processed is placed and a side surface extending downward from the top surface and a heater (18) provided in the susceptor (16) and serving to heat the wafer (W) through the top surface. The top and side surfaces of the susceptor (16) is coated with a CVD pre-coat layer (28). The pre-coat layer (28) has a thickness great enough to substantially saturate the amount of heat originated from the heater (18) and radiated from the top and side surfaces of the susceptor (16).
Abstract translation: 在用于半导体处理的成膜容器（4）中设置感受器装置。 所述基座装置包括：基座（16），其具有顶面，待处理的晶片（W）被放置在所述上表面上;从所述顶面向下延伸的侧面和设置在所述基座中的加热器， 以通过顶表面来加热晶片（W）。 基座（16）的顶表面和侧表面涂覆有CVD预涂层（28）。 预涂层（28）的厚度足够大以使来自加热器（18）的热量基本饱和并从基座（16）的顶表面和侧表面辐射。
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公开(公告)号：KR1020170085977A
公开(公告)日：2017-07-25
申请号：KR1020170005387
申请日：2017-01-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/677 , H01L21/683 , H01L21/60
Abstract: [과제] 진공반송모듈과진공처리모듈의사이를구획하는게이트밸브를개폐했을때에, 웨이퍼에의파티클의부착을억제하는기술을제공하는것. [해결수단] 진공반송실(2)과처리용기(30) 사이의웨이퍼(W)의반송을실시함에있어서, 양자를구획하고있는게이트밸브(40)를열기전에처리용기(30) 내에서는, 탑재대(5)의상방으로부터 Ar 가스를공급하고, 해당불활성가스의유량이진공반송실(2) 내에공급되는 N가스의유량보다작고, 또처리용기(30) 내의압력이진공반송실(2) 내의압력보다작은상태로하고있다. 이때문에게이트밸브(40)를열었을때에 N가스가, 진공반송실(2)로부터처리용기(30)로유입하는방향의흐름, 및탑재대(5)의표면의중심부로부터주연부로향하고, 탑재대(5)의주연으로부터하방으로향하는기류를유지한채로, 게이트밸브(40)를열고, 웨이퍼(W)를반송할수 있어, 부착물(100)의탑재대(5)의상방으로의비산을억제할수 있다.
Abstract translation: 发明内容本发明提供一种技术，用于在用于分隔真空输送模块和真空处理模块之间的分隔的闸阀打开或关闭时抑制颗粒对晶片的粘附。 在搬运真空搬运室2与处理容器30之间的晶片W时，在处理容器30内，在打开分隔真空搬运室2与处理容器30的闸阀40之前， 阶段5，纱线从所述的装备室供给Ar气体，和输送在真空传送腔室中的惰性气体压力的流速（2）N小于所述气体的流率，并且处理容器30被供给到真空（2 室内的压力小于室内的压力。 正因为如此，在N 2气体打开闸阀40时，在一个方向上的流动从真空传送腔室流入所述处理容器30（2），以及与所述外围的一部分从基体5的表面的中心面对，与 同时，可以保留从基座5的外周向下指向的气流，打开闸阀40，它是能够运输晶片（W），可以抑制附着100的安装台5服装室的散射 有。
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公开(公告)号：KR1020100126257A
公开(公告)日：2010-12-01
申请号：KR1020107007380
申请日：2009-03-25
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor： 오카베신야
IPC: H01L21/285 , H01L21/205 , C23C16/44
CPC classification number: C23C16/4404 , C23C16/4405 , C23C16/50
Abstract: 금속계막을 성막하는 데 있어서, 챔버 내에, 프리코트막을 성막하는 공정과, 프리코트 후의 챔버 내에 피처리 기판을 반입하여 스테이지 상에 배치하고, 피처리 기판을 가열하면서, 처리 가스를 공급하여 처리 가스의 플라즈마를 생성하며, 플라즈마 CVD에 의해 피처리 기판에 금속계막을 성막하는 처리를 복수 장의 피처리 기판에 대해서 행하는 공정과, 복수 장의 피처리 기판에 대한 성막 처리가 종료된 단계에서, 챔버 내에 클리닝 가스를 도입하여 드라이 클리닝을 행하는 공정을 반복하여 행하고, 피처리 기판에 금속계막을 성막하는 처리를 복수 장의 피처리 기판에 대해서 행하는 공정은, 그 도중에 1회 또는 2회 이상, 스테이지 상에 도전성막을 형성한다.
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公开(公告)号：KR1020080007496A
公开(公告)日：2008-01-21
申请号：KR1020077028046
申请日：2007-04-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/28
CPC classification number: C23C16/14 , C23C16/045 , C23C16/45565 , C23C16/5096 , H01L21/28556 , H01L21/76843
Abstract: In a chamber (1) having a shower head (10) and an electrode (8) functioning as a pair of parallel plate electrodes, a wafer (W) provided with a hole having a front diameter of 0.13 mum or less and/or an aspect ratio of 10 or more is arranged. While introducing a processing gas containing TiCl4 gas and H2 gas, a high frequency power is supplied from a high frequency power supply (34) to the shower head (10) and a plasma is formed between them. A Ti film is deposited on the wafer by accelerating the reaction of processing gas by the plasma. In this regard, the value of the high frequency power (W)/the flow rate (mL/min(sccm)) of TiCl4 gas is set at 67 or less.
Abstract translation: 在具有淋浴喷头（10）的室（1）和作为一对平行板电极的电极（8）中，设置有前径为0.13μm以下的孔的晶片（W）和/或 纵横比为10以上。 在引入含有TiCl 4气体和H 2气体的处理气体的同时，从高频电源（34）向喷淋头（10）供给高频电力，并在它们之间形成等离子体。 通过等离子体加速处理气体的反应，在晶片上沉积Ti膜。 在这方面，TiCl 4气体的高频功率（W）/流量（mL / min（sccm））的值设定为67以下。
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公开(公告)号：KR1020080007495A
公开(公告)日：2008-01-21
申请号：KR1020077028037
申请日：2007-04-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/28
CPC classification number: C23C16/045 , C23C16/14 , C23C16/45565 , C23C16/5096 , H01L21/28556 , H01L21/76843
Abstract: In a chamber (1) having a shower head (10) and an electrode (8) functioning as a pair of parallel plate electrodes, a wafer (W) provided with a hole having a front diameter of 0.13 mum or less and/or an aspect ratio of 10 or more is arranged. A Ti film is deposited while reducing the amount of ions reaching the bottom of the hole when the plasma is formed by introducing TiCl4 gas, H2 gas and a rare gas having an atomic weight larger than that of Ar gas as a processing gas.
Abstract translation: 在具有淋浴喷头（10）的室（1）和作为一对平行板电极的电极（8）中，设置有前径为0.13μm以下的孔的晶片（W）和/或 纵横比为10以上。 当通过引入TiCl 4气体，H 2气体和具有比Ar气体的原子量大的稀有气体作为处理气体形成等离子体时，沉积Ti膜，同时减少到达孔底部的离子的量。
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