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公开(公告)号：KR1020060016814A
公开(公告)日：2006-02-22
申请号：KR1020057024111
申请日：2004-04-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20
CPC classification number: C23C16/34 , C23C16/45529 , C23C16/45542 , H01L21/28562 , H01L21/76846 , H01L21/7685 , H01L2221/1078
Abstract: A process for depositing a film on a substrate being processed placed in a processing container, comprising a first film deposition step repeating a first step for supplying a first material gas of organic metal compound containing no halogen element into the processing container and then removing the first material gas from the inside of the processing container and a second step for supplying a second material gas containing hydrogen or a hydrogen compound into the processing container and then removing the second material gas from the inside of the processing container, and a second film deposition step repeating a third step for supplying a third material gas of metal halide into the processing container and then removing the third material gas from the substrate being processed and a fourth step for supplying a fourth material gas containing hydrogen or a hydrogen compound into the processing container and then removing the fourth material gas from the inside of the processing container.
Abstract translation: 一种用于在被处理的基板上沉积薄膜的方法，放置在处理容器中，包括第一薄膜沉积步骤，重复第一步骤，用于将不含卤素元素的有机金属化合物的第一原料气体供应到处理容器中， 从处理容器的内部的原料气体和向处理容器供给含有氢或氢化合物的第二原料气体，然后从处理容器的内部除去第二原料气体的第二工序，以及第二成膜工序 重复第三步骤，将金属卤化物的第三原料气体供应到处理容器中，然后从被处理的基板中除去第三原料气体;第四步骤，将含有氢或氢化合物的第四材料气体供应到处理容器中， 然后从处理配件的内部去除第四原料气体 TAINER。
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公开(公告)号：KR1020010088429A
公开(公告)日：2001-09-26
申请号：KR1020010011654
申请日：2001-03-07
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02
CPC classification number: C23C16/4405
Abstract: PURPOSE: To provide a method of efficiently cleaning a processing equipment with a small number of stages at a low cost without causing fluctuation in the capacity of the processing equipment and the quality of wafers after processing, and also to provide a processing equipment for which such cleaning as above can be performed. CONSTITUTION: In the state where a process chamber of the processing equipment is evacuated, cleaning gas containing TFAA(trifluoroacetic acid) as a cleaning agent is supplied into the process chamber. When a metal such as copper, which is used for forming wiring or electrode and deposited on the inner wall of the process chamber, is directly formed into complex on contact with the cleaning agent (TFAA) in the cleaning gas without forming oxides and metallic salts. Because this complex is sublimated by evacuation and discharged out of the chamber, cleaning can be performed with a small number of stages at a low cost.
Abstract translation: 目的：提供一种以低成本高效清洁少量级的加工设备的方法，而不会造成加工设备的容量和加工后的晶片质量的波动，并且还提供一种加工设备， 可以进行如上所述的清洗。 构成：在处理设备的处理室被抽真空的状态下，含有作为清洁剂的TFAA（三氟乙酸）的清洁气体被供给到处理室中。 当用于形成布线或电极并沉积在处理室的内壁上的诸如铜的金属在与清洁气体中的清洁剂（TFAA）接触时直接形成为复合物，而不形成氧化物和金属盐 。 由于该复合体通过排空升华并排出室，所以可以以少量的阶段以低成本执行清洁。
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公开(公告)号：KR100945316B1
公开(公告)日：2010-03-05
申请号：KR1020087011870
申请日：2007-01-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H05H1/46
CPC classification number: H01J37/32192 , H01J65/044
Abstract: 광원 장치는, 플라즈마 형성 영역을 포함하고, 상기 플라즈마 형성 영역에서 무전극 방전에 의해 플라즈마를 형성하여 발광을 생성하는 플라즈마 형성실과, 상기 플라즈마 형성실 내에서의 플라즈마 형성의 하단을 형성하고, 상기 발광을 투과하는 광학창에 의해 이루어지고, 상기 플라즈마 형성실 내에는, 상기 플라즈마를 생성하기 위한 마이크로파를 도입하는 마이크로파 투과창이 형성되어 있고, 또한 상기 마이크로파 투과창의 외측에는, 상기 마이크로파창에 결합하여, 상기 마이크로파를 도입한다.
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公开(公告)号：KR100776058B1
公开(公告)日：2007-11-15
申请号：KR1020010011654
申请日：2001-03-07
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02
CPC classification number: C23C16/4405
Abstract: 처리 장치의 처리 챔버내를 진공으로 한 상태로, 상기 처리 챔버내에 트리플루오로초산(TFA)을 클리닝제로서 포함하는 클리닝 가스를 공급한다. 처리 챔버의 내벽에 부착된 배선 또는 전극을 형성하는데에 이용되는 동과 같은 금속은 상기 클리닝 가스중의 클리닝제(TFA)에 닿으면 산화물이나 금속 염을 형성하지 않고서 직접 착체화된다. 이 착체는 진공 흡인에 의해 승화되어 처리 챔버 외부로 배출되기 때문에 적은 공정수 및 저비용으로 효율적으로 클리닝된다.
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公开(公告)号：KR1020050101573A
公开(公告)日：2005-10-24
申请号：KR1020057016308
申请日：2004-02-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/45523 , C23C16/34 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76843
Abstract: A method of rapidly forming a thin film of high quality through film formation by alternate feeding of raw gases. In particular, a method of forming a TiN thin film, comprising repeating operations including causing TiCl4 gas as a raw gas to be adsorbed on a substrate or TiCl4 molecules adsorbed on a substrate and feeding NH3 gas as a reactant gas in a treating chamber so as to effect reaction of TiCl4 and NH3 leading to formation of a TiN film, which method further comprises an operation of, prior to the adsorption of TiCl4 gas on the substrate, feeding reducing H2 gas in the treating chamber (30) so as to change TiCl4 to a state of enhanced likelihood of adsorption on the substrate (e.g., TiCl3).
Abstract translation: 通过交替进料原料气体，通过成膜快速形成高质量的薄膜的方法。 特别是形成TiN薄膜的方法，其特征在于，包括使作为原料气体的TiCl 4气体吸附在基板上的重复操作或吸附在基板上的TiCl 4分子，将NH 3气体作为反应气体供给到处理室中， 以实现TiCl 4和NH 3的反应，导致TiN膜的形成，该方法还包括在将TiCl 4气体吸附在衬底上之前，在处理室（30）中进料还原H 2气体以改变TiCl 4 达到在底物上吸附的可能性增加的状态（例如，TiCl 3）。
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Patent Agency Ranking
公开(公告)号：KR1020030074721A
公开(公告)日：2003-09-19
申请号：KR1020037009600
申请日：2002-01-22
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor： 다카츠키고이치 , 요시타카히카루 , 아시가키시게오 , 이노우에요이치 , 아카호리다카시 , 이시즈카슈우이치 , 아베쇼이치 , 스즈키다카시 , 가와무라고헤이 , 미요시히데노리 , 정기시 , 오시마야스히로 , 다카하시히로유키
IPC: H01L21/3065
CPC classification number: H01J37/32009 , H01J37/3244 , H01J37/32541
Abstract: 전극판(20)의 서셉터(10)에 대향하는 면을 볼록형의 형상으로 한다. 전극판(20)은 볼록부(20a)에 있어서 실드링(Shield Ring)(26)의 개구(26a)와 결합한다. 이 때, 볼록부(20a)의 두께는, 실드링(26)의 두께와 거의 동일하다. 이로써, 전극판(20)과 실드링(26)은 실질적으로 동일한 평면을 형성한다. 또한, 볼록부(20a)의 주요면은, 웨이퍼(W)의 직경의 1.2∼1.5배의 직경을 갖는다. 또한, 전극판(20)은, 예컨대 SiC로 구성된다.
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公开(公告)号：KR1020090125173A
公开(公告)日：2009-12-03
申请号：KR1020097021159
申请日：2006-12-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L23/5329 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/31633 , H01L21/7682 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L23/53223 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
Abstract: Disclosed is a method for forming an SiOCH film which is characterized in that an SiOCH film is formed on a substrate by repeating, a plurality of times, a unit film forming process which includes a deposition step wherein an SiOCH film element is deposited by a plasma CVD method using an organosilicon compound as the raw material, and a hydrogen plasma processing step wherein the deposited SiOCH film element is treated with hydrogen plasma.
Abstract translation: 公开了一种形成SiOCH膜的方法，其特征在于，通过重复多次重复多次制备包括沉积步骤的单元成膜工艺在基板上形成SiOCH膜，其中通过等离子体沉积SiOCH膜元件 使用有机硅化合物作为原料的CVD法和氢等离子体处理工序，其中沉积的SiOCH膜元件用氢等离子体处理。
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公开(公告)号：KR1020080064166A
公开(公告)日：2008-07-08
申请号：KR1020087011870
申请日：2007-01-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H05H1/46
CPC classification number: H01J37/32192 , H01J65/044
Abstract: A light source device is formed by a plasma formation chamber including a plasma formation region where plasma is formed by electrodeless discharge to generate light and an optical window defining the lower end of the plasma region in the plasma formation chamber and transmitting the light. A micro wave transmitting window is formed in the plasma chamber for introducing a micro wave for generating the plasma. Furthermore, outside of the micro wave transmitting window, a micro wave antenna is connected to the micro wave window for introducing the micro wave.
Abstract translation: 光源装置由等离子体形成室形成，该等离子体形成室包括等离子体形成区域，其中通过无电极放电形成等离子体以产生光，以及限定等离子体形成室中的等离子体区域的下端并传输光的光学窗口。 在等离子体室中形成微波透射窗，用于引入用于产生等离子体的微波。 此外，在微波发射窗外，微波天线连接到微波窗口以引入微波。
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公开(公告)号：KR1020070119099A
公开(公告)日：2007-12-18
申请号：KR1020077028702
申请日：2004-11-08
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/31
CPC classification number: H01L21/0234 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/3121
Abstract: Disclosed is a method for processing substrate which enables an insulating film formed by a plasma CVD method using an organic silane gas to have a low dielectric constant and to maintain mechanical strength. A method for processing substrate comprising a film-forming step wherein an insulating film is formed on a substrate to be processed by supplying a first process gas containing an organic silane gas onto the substrate and exciting a plasma thereon, and a post-treatment step following the film-forming step wherein the insulating film is treated by supplying a second process gas containing an H2 gas onto the substrate and exciting a plasma thereon is characterized in that the plasma excitation in the post-treatment step is carried out by means of a microwave plasma antenna.
Abstract translation: 公开了一种处理衬底的方法，其使得能够通过使用有机硅烷气体的等离子体CVD方法形成的绝缘膜具有低介电常数并保持机械强度。 一种处理衬底的方法，包括一种成膜步骤，其中通过将含有有机硅烷气体的第一工艺气体供应到衬底上并在其上激发等离子体，在待加工的衬底上形成绝缘膜，以及后处理步骤 其中通过将含有H 2气体的第二处理气体供应到衬底上并激发等离子体来处理绝缘膜的成膜步骤的特征在于后处理步骤中的等离子体激发通过微波 等离子天线
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公开(公告)号：KR100715065B1
公开(公告)日：2007-05-07
申请号：KR1020057016308
申请日：2004-02-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/45523 , C23C16/34 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76843
Abstract: 원료로 되는 가스를 교대로 공급하므로써 성막을 실행하는 박막의 형성으로서 고품질의 박막을 신속히 형성하는 방법에 관한 것으로, 원료가스인 TiCl
4 가스를 기판상 혹은 기판에 흡착하고 있는 TiCl
4 의 분자상에 흡착시키고, 반응가스인 NH
3 가스를 처리용기내에 공급하여, 이 NH
3 와 TiCl
4 를 반응시켜 TiN을 성막하는 공정을 갖고, 이들의 공정을 되풀이하여 실시하므로써 TiN 박막을 형성하는 방법에 있어서, 또한 TiCl
4 가스가 기판상에 흡착하기 전에, 환원성을 갖는 H
2 가스를 처리용기 내에 공급하여, TiCl
4 를 기판에 흡착하기 쉬운 상태(예컨대, [TiCl
3 ]
+ )로 변화시키는 공정을 마련한다.
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