公开(公告)号：KR1020100087636A

公开(公告)日：2010-08-05

申请号：KR1020100003967

申请日：2010-01-15

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사토준 ,  기쿠치키요타카 ,  무라카미히로키 ,  나카지마시게루 ,  하세베카즈히데

IPC: H01L21/205

CPC classification number: C23C16/4405

Abstract: PURPOSE: A film forming device for processing a semiconductor, a using method thereof, and a computer readable medium for executing the same are provided to improve the property of a device related to throughput or particle generation by efficiently generating an oxide radical. CONSTITUTION: A main cleaning process and a post cleaning process are successively performed on a substrate for removing a thin film byproduct. In the main cleaning process, the film byproduct is etched by supplying a cleaning gas including fluorine in a reaction chamber. In the post cleaning process, the fluorine material including silicon is changed into the intermediate product through oxidation by supplying an oxide gas to the reaction chamber to remove the fluorine including the silicon. The process for reacting with the intermediate product is repeated several times by supplying hydrogen fluoride gas to the reactive chamber.

Abstract translation: 目的：提供一种用于处理半导体的成膜装置，其使用方法和用于执行该半导体的使用方法和用于执行该半导体的使用方法和计算机可读介质，以通过有效地产生氧化物自由基来改善与生产量或颗粒产生有关的装置的性质。 构成：在用于除去薄膜副产物的基板上连续进行主要清洁处理和后清洗处理。 在主要清洗过程中，通过在反应室中提供包括氟的清洁气体来蚀刻膜副产物。 在后清洗工序中，通过向反应室供给氧化物气体，除去包含硅的氟，将包含硅的氟材料变为氧化的中间体。 通过向反应室供应氟化氢气体，重复多次与中间产物反应的方法。

公开(公告)号：KR1020100036214A

公开(公告)日：2010-04-07

申请号：KR1020090092465

申请日：2009-09-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하세베카즈히데 ,  나카지마시게루 ,  오가와쥰 ,  무라카미히로키

IPC: H01L21/027

CPC classification number: H01L21/027 ,  C23C16/02 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45536 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/0276

Abstract: PURPOSE: A method for forming a mask pattern, a method for forming a fine pattern, and a thin film forming device are provided to reduce manufacturing costs by forming a silicon oxide layer on a pattern organic layer. CONSTITUTION: A resist layer is formed on a thin film of a semiconductor substrate(S12). The resist layer is processed to a resist pattern with a preset pitch using a photolithography(S13). The resist pattern is processed(S14). An oxide layer is formed on the thin film and the resist pattern by supplying source gas, oxide radical or gas containing oxygen(S15).

Abstract translation: 目的：提供一种用于形成掩模图案的方法，形成精细图案的方法和薄膜形成装置，以通过在图案有机层上形成氧化硅层来降低制造成本。 构成：在半导体基板的薄膜上形成抗蚀剂层（S12）。 使用光刻法将抗蚀剂层处理成具有预设间距的抗蚀剂图案（S13）。 处理抗蚀剂图案（S14）。 通过供给源气体，氧化物自由基或含氧气体，在薄膜和抗蚀剂图案上形成氧化物层（S15）。